Lecture on Introduction of Semiconductor at North South University as the undergraduate course (ETE411)
=======================
Dr. Mashiur Rahman
Assistant Professor
Dept. of Electrical Engineering and Computer Science
North South University, Dhaka, Bangladesh
http://mashiur.biggani.org
ENT201-Electronic DevicesLecture No. 10Unit-1 *Quantitative Theory of the PN-Diode Currents- Diode Current Equation.
Milliman's Electronic Devices and Circuits
ENT201-Electronic DevicesLecture No. 10Unit-1 *Quantitative Theory of the PN-Diode Currents- Diode Current Equation.
Milliman's Electronic Devices and Circuits
Short Channel Effects are governed by complex physical phenomena and mainly Influenced because of both vertical and horizontal electric field components.
To meet the current requirements of
Electronic devices, the miniaturization of devices is important. And so is Second Order effects which otherwise degrade the performance of devices.
The three types of rectifiers in just 18 slides. Learn and enjoy the concepts. This PowerPoint presentation not only tells about the working and principles of rectifiers but also determines the disadvantages and advantages of different rectifiers. This PowerPoint presentation also has circuit diagrams that suit your necessities. This PPT can be written as an answer for a long type of question too.
SHORT-CHANNEL EFFECTS
A MOSFET is considered to be short when the channel length ‘L’ is the same order of magnitude as the depletion-layer widths (xdD, xdS). The potential distribution in the channel now depends upon both, transverse field Ex, due to gate bias and also on the longitudinal field Ey, due to drain bias When the Gate channel length <<1 m, short channel effect becomes important .
This leads to many
undesirable effects in MOSFET.
The short-channel effects are attributed to two physical phenomena:
A) The limitation imposed on electron drift characteristics in the channel,
B) The modification of the threshold voltage due to the shortening channel length.
In particular five different short-channel effects can be distinguished:
1. Drain-induced barrier lowering and “Punch through”
2. Surface scattering
3. Velocity saturation
4. Impact ionization
5. Hot electrons
Introduction
Semiconductor is a solid substance that has conductivity between that of an insulator and that of most metals, either due to the addition of an impurity or because of temperature effects. Devices made of semiconductors, notably silicon, are essential components of most electronic circuits.
Examples: Silicon, Germanium, Carbon
Intrinsic & Extrinsic Semiconductor
Semiconductors are mainly classified into two categories: Intrinsic and Extrinsic. An intrinsic semiconductor material is chemically very pure and possesses poor conductivity. It has equal numbers of negative carriers (electrons) and positive carriers (holes). Where as an extrinsic semiconductor is an improved intrinsic semiconductor with a small amount of impurities added.
The Doping of Semiconductors
The addition of a small percentage of foreign atoms in the regular crystal lattice of silicon or germanium produces dramatic changes in their electrical properties, producing n-type and p-type semiconductors.
Pentavalent impurities
Impurity atoms with 5 valence electrons produce n-type semiconductors by contributing extra electrons.
Trivalent impurities
Impurity atoms with 3 valence electrons produce p-type semiconductors by producing a "hole" or electron deficiency.
N-Type Semiconductor
The addition of pentavalent impurities such as antimony, arsenic or phosphorous contributes free electrons, greatly increasing the conductivity of the intrinsic semiconductor. Phosphorous may be added by diffusion of phosphine gas (PH3).
P-Type Semiconductor
The addition of trivalent impurities such as boron, aluminum or gallium to an intrinsic semiconductor creates deficiencies of valence electrons,called "holes". It is typical to use B2H6 diborane gas to diffuse boron into the silicon material.
Diodes
A device that blocks current in one direction while letting current flow in another direction is called a diode. Diodes can be used in a number of ways. For example, a device that uses batteries often contains a diode that protects the device if you insert the batteries backward. The diode simply blocks any current from leaving the battery if it is reversed -- this protects the sensitive electronics in the device.
The MOSFET is an important element in embedded system design which is used to control the loads as per the requirement. The MOSFET is a high voltage controlling device provides some key features for circuit designers in terms of their overall performance.
Lecture on Introduction of Semiconductor at North South University as the undergraduate course (ETE411)
=======================
Dr. Mashiur Rahman
Assistant Professor
Dept. of Electrical Engineering and Computer Science
North South University, Dhaka, Bangladesh
http://mashiur.biggani.org
Short Channel Effects are governed by complex physical phenomena and mainly Influenced because of both vertical and horizontal electric field components.
To meet the current requirements of
Electronic devices, the miniaturization of devices is important. And so is Second Order effects which otherwise degrade the performance of devices.
The three types of rectifiers in just 18 slides. Learn and enjoy the concepts. This PowerPoint presentation not only tells about the working and principles of rectifiers but also determines the disadvantages and advantages of different rectifiers. This PowerPoint presentation also has circuit diagrams that suit your necessities. This PPT can be written as an answer for a long type of question too.
SHORT-CHANNEL EFFECTS
A MOSFET is considered to be short when the channel length ‘L’ is the same order of magnitude as the depletion-layer widths (xdD, xdS). The potential distribution in the channel now depends upon both, transverse field Ex, due to gate bias and also on the longitudinal field Ey, due to drain bias When the Gate channel length <<1 m, short channel effect becomes important .
This leads to many
undesirable effects in MOSFET.
The short-channel effects are attributed to two physical phenomena:
A) The limitation imposed on electron drift characteristics in the channel,
B) The modification of the threshold voltage due to the shortening channel length.
In particular five different short-channel effects can be distinguished:
1. Drain-induced barrier lowering and “Punch through”
2. Surface scattering
3. Velocity saturation
4. Impact ionization
5. Hot electrons
Introduction
Semiconductor is a solid substance that has conductivity between that of an insulator and that of most metals, either due to the addition of an impurity or because of temperature effects. Devices made of semiconductors, notably silicon, are essential components of most electronic circuits.
Examples: Silicon, Germanium, Carbon
Intrinsic & Extrinsic Semiconductor
Semiconductors are mainly classified into two categories: Intrinsic and Extrinsic. An intrinsic semiconductor material is chemically very pure and possesses poor conductivity. It has equal numbers of negative carriers (electrons) and positive carriers (holes). Where as an extrinsic semiconductor is an improved intrinsic semiconductor with a small amount of impurities added.
The Doping of Semiconductors
The addition of a small percentage of foreign atoms in the regular crystal lattice of silicon or germanium produces dramatic changes in their electrical properties, producing n-type and p-type semiconductors.
Pentavalent impurities
Impurity atoms with 5 valence electrons produce n-type semiconductors by contributing extra electrons.
Trivalent impurities
Impurity atoms with 3 valence electrons produce p-type semiconductors by producing a "hole" or electron deficiency.
N-Type Semiconductor
The addition of pentavalent impurities such as antimony, arsenic or phosphorous contributes free electrons, greatly increasing the conductivity of the intrinsic semiconductor. Phosphorous may be added by diffusion of phosphine gas (PH3).
P-Type Semiconductor
The addition of trivalent impurities such as boron, aluminum or gallium to an intrinsic semiconductor creates deficiencies of valence electrons,called "holes". It is typical to use B2H6 diborane gas to diffuse boron into the silicon material.
Diodes
A device that blocks current in one direction while letting current flow in another direction is called a diode. Diodes can be used in a number of ways. For example, a device that uses batteries often contains a diode that protects the device if you insert the batteries backward. The diode simply blocks any current from leaving the battery if it is reversed -- this protects the sensitive electronics in the device.
The MOSFET is an important element in embedded system design which is used to control the loads as per the requirement. The MOSFET is a high voltage controlling device provides some key features for circuit designers in terms of their overall performance.
Lecture on Introduction of Semiconductor at North South University as the undergraduate course (ETE411)
=======================
Dr. Mashiur Rahman
Assistant Professor
Dept. of Electrical Engineering and Computer Science
North South University, Dhaka, Bangladesh
http://mashiur.biggani.org
Lecture on Introduction of Semiconductor at North South University as the undergraduate course (ETE411)
=======================
Dr. Mashiur Rahman
Assistant Professor
Dept. of Electrical Engineering and Computer Science
North South University, Dhaka, Bangladesh
http://mashiur.biggani.org
Lecture on Introduction of Semiconductor at North South University as the undergraduate course (ETE411)
=======================
Dr. Mashiur Rahman
Assistant Professor
Dept. of Electrical Engineering and Computer Science
North South University, Dhaka, Bangladesh
http://mashiur.biggani.org
Lecture on Introduction of Semiconductor at North South University as the undergraduate course (ETE411)
=======================
Dr. Mashiur Rahman
Assistant Professor
Dept. of Electrical Engineering and Computer Science
North South University, Dhaka, Bangladesh
http://mashiur.biggani.org
Lecture on Introduction of Semiconductor at North South University as the undergraduate course (ETE411)
=======================
Dr. Mashiur Rahman
Assistant Professor
Dept. of Electrical Engineering and Computer Science
North South University, Dhaka, Bangladesh
http://mashiur.biggani.org
Lecture on Introduction of Semiconductor at North South University as the undergraduate course (ETE411)
=======================
Dr. Mashiur Rahman
Assistant Professor
Dept. of Electrical Engineering and Computer Science
North South University, Dhaka, Bangladesh
http://mashiur.biggani.org
Using Whizle in a university, college or any learning organization to reinforce learning and help students connect with each other across organizational boundaries and find relevant resources
Lecture on Introduction of Semiconductor at North South University as the undergraduate course (ETE411)
=======================
Dr. Mashiur Rahman
Assistant Professor
Dept. of Electrical Engineering and Computer Science
North South University, Dhaka, Bangladesh
http://mashiur.biggani.org
Semiconductor Diode :
What is Semiconductor Diode?
How is it Work?
What are the Types?
Current Flow in Forward And Reverse Bios?
What is Light Emitting Diode (LED)?
What is Zener Diode?
and in aditional :
P-N Junction and its formation
Formation of Depletion Layer
External Biasing of P-N Junction
V-I Characteristics of P-N Junction
Zener Breakdown
Avalanche Breakdown
Comparison between Zener and Avalanche Breakdown
The Zener diode is fabricated in such a way that, its advantage is in its reverse bios. After a sufficient increase in reverse voltage across the junction, the minority carriers get sufficient kinetic energy due to the strong electric field. The high kinetic energy free electrons can collide strongly with the lattice ions so that they emit more free electrons, these liberated electrons also get high kinetic energy due to reverse applied electric field and they create more free electrons by collision cumulatively. This process may continue repeatedly and soon large free electron gas is created in the depletion layer, at which a small change in potential creates huge recombination and surge of carriers across the junction and hence large current through the circuit spontaneously and hence the entire diode will become conductive.
Zener diode is an important electronic device mainly used as voltage regulator. The experiment explains the determination of zener voltage and resistance of diode.
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Explore natural remedies for syphilis treatment in Singapore. Discover alternative therapies, herbal remedies, and lifestyle changes that may complement conventional treatments. Learn about holistic approaches to managing syphilis symptoms and supporting overall health.
Ozempic: Preoperative Management of Patients on GLP-1 Receptor Agonists Saeid Safari
Preoperative Management of Patients on GLP-1 Receptor Agonists like Ozempic and Semiglutide
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Pulmonary Thromboembolism - etilogy, types, medical- Surgical and nursing man...VarunMahajani
Disruption of blood supply to lung alveoli due to blockage of one or more pulmonary blood vessels is called as Pulmonary thromboembolism. In this presentation we will discuss its causes, types and its management in depth.
ARTIFICIAL INTELLIGENCE IN HEALTHCARE.pdfAnujkumaranit
Artificial intelligence (AI) refers to the simulation of human intelligence processes by machines, especially computer systems. It encompasses tasks such as learning, reasoning, problem-solving, perception, and language understanding. AI technologies are revolutionizing various fields, from healthcare to finance, by enabling machines to perform tasks that typically require human intelligence.
Title: Sense of Smell
Presenter: Dr. Faiza, Assistant Professor of Physiology
Qualifications:
MBBS (Best Graduate, AIMC Lahore)
FCPS Physiology
ICMT, CHPE, DHPE (STMU)
MPH (GC University, Faisalabad)
MBA (Virtual University of Pakistan)
Learning Objectives:
Describe the primary categories of smells and the concept of odor blindness.
Explain the structure and location of the olfactory membrane and mucosa, including the types and roles of cells involved in olfaction.
Describe the pathway and mechanisms of olfactory signal transmission from the olfactory receptors to the brain.
Illustrate the biochemical cascade triggered by odorant binding to olfactory receptors, including the role of G-proteins and second messengers in generating an action potential.
Identify different types of olfactory disorders such as anosmia, hyposmia, hyperosmia, and dysosmia, including their potential causes.
Key Topics:
Olfactory Genes:
3% of the human genome accounts for olfactory genes.
400 genes for odorant receptors.
Olfactory Membrane:
Located in the superior part of the nasal cavity.
Medially: Folds downward along the superior septum.
Laterally: Folds over the superior turbinate and upper surface of the middle turbinate.
Total surface area: 5-10 square centimeters.
Olfactory Mucosa:
Olfactory Cells: Bipolar nerve cells derived from the CNS (100 million), with 4-25 olfactory cilia per cell.
Sustentacular Cells: Produce mucus and maintain ionic and molecular environment.
Basal Cells: Replace worn-out olfactory cells with an average lifespan of 1-2 months.
Bowman’s Gland: Secretes mucus.
Stimulation of Olfactory Cells:
Odorant dissolves in mucus and attaches to receptors on olfactory cilia.
Involves a cascade effect through G-proteins and second messengers, leading to depolarization and action potential generation in the olfactory nerve.
Quality of a Good Odorant:
Small (3-20 Carbon atoms), volatile, water-soluble, and lipid-soluble.
Facilitated by odorant-binding proteins in mucus.
Membrane Potential and Action Potential:
Resting membrane potential: -55mV.
Action potential frequency in the olfactory nerve increases with odorant strength.
Adaptation Towards the Sense of Smell:
Rapid adaptation within the first second, with further slow adaptation.
Psychological adaptation greater than receptor adaptation, involving feedback inhibition from the central nervous system.
Primary Sensations of Smell:
Camphoraceous, Musky, Floral, Pepperminty, Ethereal, Pungent, Putrid.
Odor Detection Threshold:
Examples: Hydrogen sulfide (0.0005 ppm), Methyl-mercaptan (0.002 ppm).
Some toxic substances are odorless at lethal concentrations.
Characteristics of Smell:
Odor blindness for single substances due to lack of appropriate receptor protein.
Behavioral and emotional influences of smell.
Transmission of Olfactory Signals:
From olfactory cells to glomeruli in the olfactory bulb, involving lateral inhibition.
Primitive, less old, and new olfactory systems with different path
Lung Cancer: Artificial Intelligence, Synergetics, Complex System Analysis, S...Oleg Kshivets
RESULTS: Overall life span (LS) was 2252.1±1742.5 days and cumulative 5-year survival (5YS) reached 73.2%, 10 years – 64.8%, 20 years – 42.5%. 513 LCP lived more than 5 years (LS=3124.6±1525.6 days), 148 LCP – more than 10 years (LS=5054.4±1504.1 days).199 LCP died because of LC (LS=562.7±374.5 days). 5YS of LCP after bi/lobectomies was significantly superior in comparison with LCP after pneumonectomies (78.1% vs.63.7%, P=0.00001 by log-rank test). AT significantly improved 5YS (66.3% vs. 34.8%) (P=0.00000 by log-rank test) only for LCP with N1-2. Cox modeling displayed that 5YS of LCP significantly depended on: phase transition (PT) early-invasive LC in terms of synergetics, PT N0—N12, cell ratio factors (ratio between cancer cells- CC and blood cells subpopulations), G1-3, histology, glucose, AT, blood cell circuit, prothrombin index, heparin tolerance, recalcification time (P=0.000-0.038). Neural networks, genetic algorithm selection and bootstrap simulation revealed relationships between 5YS and PT early-invasive LC (rank=1), PT N0—N12 (rank=2), thrombocytes/CC (3), erythrocytes/CC (4), eosinophils/CC (5), healthy cells/CC (6), lymphocytes/CC (7), segmented neutrophils/CC (8), stick neutrophils/CC (9), monocytes/CC (10); leucocytes/CC (11). Correct prediction of 5YS was 100% by neural networks computing (area under ROC curve=1.0; error=0.0).
CONCLUSIONS: 5YS of LCP after radical procedures significantly depended on: 1) PT early-invasive cancer; 2) PT N0--N12; 3) cell ratio factors; 4) blood cell circuit; 5) biochemical factors; 6) hemostasis system; 7) AT; 8) LC characteristics; 9) LC cell dynamics; 10) surgery type: lobectomy/pneumonectomy; 11) anthropometric data. Optimal diagnosis and treatment strategies for LC are: 1) screening and early detection of LC; 2) availability of experienced thoracic surgeons because of complexity of radical procedures; 3) aggressive en block surgery and adequate lymph node dissection for completeness; 4) precise prediction; 5) adjuvant chemoimmunoradiotherapy for LCP with unfavorable prognosis.
These lecture slides, by Dr Sidra Arshad, offer a quick overview of physiological basis of a normal electrocardiogram.
Learning objectives:
1. Define an electrocardiogram (ECG) and electrocardiography
2. Describe how dipoles generated by the heart produce the waveforms of the ECG
3. Describe the components of a normal electrocardiogram of a typical bipolar leads (limb II)
4. Differentiate between intervals and segments
5. Enlist some common indications for obtaining an ECG
Study Resources:
1. Chapter 11, Guyton and Hall Textbook of Medical Physiology, 14th edition
2. Chapter 9, Human Physiology - From Cells to Systems, Lauralee Sherwood, 9th edition
3. Chapter 29, Ganong’s Review of Medical Physiology, 26th edition
4. Electrocardiogram, StatPearls - https://www.ncbi.nlm.nih.gov/books/NBK549803/
5. ECG in Medical Practice by ABM Abdullah, 4th edition
6. ECG Basics, http://www.nataliescasebook.com/tag/e-c-g-basics
The prostate is an exocrine gland of the male mammalian reproductive system
It is a walnut-sized gland that forms part of the male reproductive system and is located in front of the rectum and just below the urinary bladder
Function is to store and secrete a clear, slightly alkaline fluid that constitutes 10-30% of the volume of the seminal fluid that along with the spermatozoa, constitutes semen
A healthy human prostate measures (4cm-vertical, by 3cm-horizontal, 2cm ant-post ).
It surrounds the urethra just below the urinary bladder. It has anterior, median, posterior and two lateral lobes
It’s work is regulated by androgens which are responsible for male sex characteristics
Generalised disease of the prostate due to hormonal derangement which leads to non malignant enlargement of the gland (increase in the number of epithelial cells and stromal tissue)to cause compression of the urethra leading to symptoms (LUTS
TEST BANK for Operations Management, 14th Edition by William J. Stevenson, Ve...kevinkariuki227
TEST BANK for Operations Management, 14th Edition by William J. Stevenson, Verified Chapters 1 - 19, Complete Newest Version.pdf
TEST BANK for Operations Management, 14th Edition by William J. Stevenson, Verified Chapters 1 - 19, Complete Newest Version.pdf
- Video recording of this lecture in English language: https://youtu.be/lK81BzxMqdo
- Video recording of this lecture in Arabic language: https://youtu.be/Ve4P0COk9OI
- Link to download the book free: https://nephrotube.blogspot.com/p/nephrotube-nephrology-books.html
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3. During the formation of junction, 2 phenomena take place: A thin layer is set up on both sides of the junction. A junction/barrier potential is developed across the junction Formation of depletion layer: Greater concentration of holes in P than N region Greater concentration of electrons in N than P region The difference in concentration establish a density gradient across the junction resulting in carrier diffusion and terminate the existence by recombination 3
4. OBJECTIVES Up on completion of this topic the student will be able to know How to forward bias the diode, under forward biasing how the diode works. How to reverse bias the diode, under reverse biasing how the diode works. ETE411 Lec11 4
6. As soon as battery connection is made, the holes in P region are repelled by the positive battery terminal & electrons in N region are repelledby the negative battery terminal. Thus both holes & electrons are driven towards the junction where they recombine. This allow easy current flow through the semiconductor as the crystal offers low resistance. FB reduces the thickness of the depletion layer. ETE411 Lec11 6
8. At room temperature, a potential difference is require before a reasonable amount of forward current starts flowing in a junction. This is known as threshold voltage, Vth.For applied voltage less than Vth, current flow is negligible. As applied voltage increase beyond Vth, forward current increase sharply. If forward voltage increase beyond a certain safe value, it will produce an extremely large current which may destroy the junction due to overheating. ETE411 Lec11 8
9. PN-Junction with forward Bias Positive terminal of the battery is connected to anode and negative terminal is connected to the cathode. Increasing the applied voltage the potential barrier decreases. Potential barrier disappears when applied voltage exceeds barrier potential. ETE411 Lec11 9
10. The resistance of junction becomes nearly zero and current starts flowing in the junction. Now the current increases sharply with increase in applied voltage. ETE411 Lec11 10
12. During the RB, holes are attracted by the negative battery terminal & electrons are attracted by the positive battery terminal. Thus, both holes & electrons move away from the junction. Hence, no electron-hole combination, no current flow and the junction offers high resistance. 12
13. 13 Practically no current flow, yet there is a small current due to minority carriers which is known as reverse current or reverse current, Isor Io. It also referred as leakage current of PN junction. If reverse bias applied to a junction is increase, a point is reached when the junction breakdown and revere current rises to value limited only by the resistance connected in series with junction. This critical value of voltage is known as breakdown voltage. ETE411 Lec11
14. PN-JUNCTION WITH REVERSE BIAS Negative terminal of the battery is connected to the anode and positive terminal is connected to the cathode. The resistance is very high in the order of mega ohms. Current is almost zero in reverse bias. ETE411 Lec11 14
15. Small reverse leakage current flows due to minority carriers present in P & N regions. Reverse voltage exceeds breakdown voltage the conductivity of the junction rapidly increases causing the diode goes to damage. Operate the diode below break down voltage. ETE411 Lec11 15
16. Zener breakdown When reverse bias is increased, the electric field at the junction also increases. High electric field causes covalent bonds to break. Thus a large number of carriers are generated. This causes a large current to flow. This mechanism of breakdown is zener breakdown. ETE411 Lec11 16
17. Avalanche breakdown The increased electric field causes increase in the velocities of minority carriers. These high energy carriers break covalent bonds, thereby generating more carriers. These generated carriers are accelerated by the electric field. They break more covalent bonds during their travel. Small reverse leakage current flows due to minority carriers present in P & N regions. Reverse voltage exceeds breakdown voltage the conductivity of the junction rapidly increases causing the diode goes to damage. Operate the diode below break down voltage. ETE411 Lec11 17
18. SUMMARY We have discussed about Forward biasing of diode Reverse biasing of diode Avalanche and zener breakdowns. ETE411 Lec11 18
19. QUIZ When we apply reverse bias to a junction diode, it Decreases the potential barrier Increases the potential barrier Greatly increases the minority carrier current Greatly increases the majority carrier current ETE411 Lec11 19
20. 2. When forward bias is applied to a junction diode, it Increases the potential barrier Decreases the potential barrier Reduces the majority carrier current to zero Reduces the minority carrier current to zero ETE411 Lec11 20
21. 3. The reverse saturation current in a junction diode is the current that flows when Only majority carriers are crossing the junction Only minority carriers are crossing the junction The junction is unbiased The potential barrier is zero ETE411 Lec11 21
22. Frequently asked questions 1) Discuss the behavior of PN junction under forward biasing 2) Explain the working of PN junction diode under reverse biasing 3) Define avalanche and zener break down ETE411 Lec11 22