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Chemical Vapour Deposition &
Physical vapour deposition
Presented by;
Tapan Patel
Department Of Nanotechnology,
V.V.P. Engineering College , Rajkot
OUTLINE
 Introduction
 CVD apparatus
 CVD process
 Advantages & Disadvantages
 Application of CVD
 PVD Process
 Varients of PVD
 Advantages & Disadvantages
 Application of PVD
 Difference Between PVD & CVD
CHEMICAL VAPOUR DEPOSITION
CVD is the formation of a non-volatile solid film on
a substrate by the reaction of vapor phase chemicals
(reactants) that contain the required constituents.
The reactant gases are
introduced into a reaction
chamber and are decomposed
and reacted at a heated surface
to form the thin film.
CVD APPARATUS
 Gas delivery system – For the supply of precursors to
the reactor chamber
 Reactor chamber – Chamber within which deposition
takes place
 Substrate loading mechanism – A system for
introducing and removing substrates, mandrels etc.
 Energy source – Provide the energy/heat that is
required to get the precursors to react/decompose.
 Vacuum system – A system for removal of all other
gaseous species other than those required for the
reaction/deposition.
CONTI…
 Exhaust system – System for removal of volatile by-
products from the reaction chamber.
 Exhaust treatment systems – In some instances,
exhaust gases may not be suitable for release into
the atmosphere and may require treatment or
conversion to safe/harmless compounds.
 Process control equipment – Gauges, controls etc..
to monitor process parameters such as pressure,
temperature and time. Alarms and safety devices
would also be included in this category.
Steps involved in a CVD process
(schematic)
1. Transport of reactants by forced convection to the
deposition region.
2. Transport of reactants by diffusion from the main gas
stream through the boundary layer to the wafer surface.
3. Adsorption of reactants on the wafer surface.
4. Surface processes, including chemical decomposition
or reaction, surface migration to attachment sites (such as
atomic-level ledges and kinks), site incorporation, and
other surface reactions.
5. Desorption of byproducts from the surface.
6. Transport of byproducts by diffusion through the
boundary layer and back to the main gas stream.
7. Transport of byproducts by forced convection away
from the deposition region.
Conti…..
Conti………….
Advantages:
 High growth rates possible
 Can deposit materials which are hard to evaporate
 Good reproducibility
 Can grow epitaxial films
Conti
Disadvantages
high temperatures
complex processes
toxic and corrosive gasses
APPLICATION
 Coatings –
 Such as wear resistance,
 Corrosion resistance,
 High temperature protection,
 Erosion protection and
 Combinations thereof.
 Semiconductors and related devices –
 Integrated circuits,
 Sensors and
 Optoelectronic devices
Conti….
 Dense structural parts – CVD can be used to
produce components that are difficult or
uneconomical to produce using conventional
fabrication techniques.
Dense parts produced via CVD are generally
thin walled and maybe deposited onto a
mandrel or former.
 Optical Fibers – For telecommunications.
Conti ………………
 Composites – Preforms can be infiltrated using CVD
techniques to produce ceramic matrix composites
such as carbon-carbon, carbon-silicon carbide and
silicon carbide-silicon carbide composites. This
process is sometimes called chemical vapour
infiltration or CVI.
 Powder production – Production of novel powders
and fibers
 Catalysts
 Nano machines
Physical Vapour Déposition(PVD)
 Physical Vapour Deposition (PVD) is fundamentally a
vaporization coating technique, involving transfer of
material on an atomic level.
 It is an alternative process to electroplating
 The process is similar to chemical vapour deposition (CVD)
except that the raw materials/precursors,
 i.e. the material that is going to be deposited starts out in
solid form, whereas in CVD, the precursors are introduced
to the reaction chamber in the gaseous state.
Conti …….
• Working Concept
PVD processes are carried out under vacuum
conditions. The process involved four steps:
1.Evaporation
2.Transportation
3.Reaction
4.Deposition
Conti…
Reaction
 In some cases coatings will consist of metal oxides,
nitrides, carbides and other such materials.
 In these cases, the target will consist of the metal.
 The atoms of metal will then react with the
appropriate gas during the transport stage.
 For the above examples, the reactive gases may be
oxygen, nitrogen and methane.
In instances where the coating consists of the target
material alone, this step would not be part of the
process.
In different conditions
VARIENTS OF PVD
Evaporative
Deposition
In which the material
to be deposited is
heated to a high
vapor pressure by
electrically resistive
heating in "high"
vacuum
18
Evaporation
ELECTRON BEAM PHYSICAL
VAPOR DEPOSITION
In which the material to
be deposited is heated to
a high vapor pressure by
electron bombardment in
"high" vacuum.
Electron Beam Physical Vapour Deposition
SPUTTER DEPOSITION
In which a glow plasma discharge (usually localized
around the "target" by a magnet) bombards the material
sputtering some away as a vapor
Sputter deposition
CATHODIC ARC DEPOSITION
In which a high power arc directed at the target material
blasts away some into a vapor.
CAD
PULSED LASER DEPOSITION
In which a high power laser ablates material from the target
into a vapor.
PLD
Importance of PVD Coatings
 PVD coatings are deposited for numerous reasons.
Some of the main ones are:
 Improved hardness and wear resistance
 Reduced friction
 Improved Oxidation resistance
 The use of such coatings is aimed at improving
efficiency through improved performance and longer
component life.
 They may also allow coated components to operate in
environments that the uncoated component would not
otherwise have been able to perform.
23
Advantages
 Materials can be deposited with improved properties
compared to the substrate material
 Almost any type of inorganic material can be used
as well as some kinds of organic materials
 The process is more environmentally friendly than
processes such as electroplating.
24
DISADVANTAGES
 It is a line of sight technique meaning that it is
extremely difficult to coat undercuts and similar
surface features
 High capital cost
 Some processes operate at high vacuums and
temperatures requiring skilled operators
 Processes requiring large amounts of heat require
appropriate cooling systems
 The rate of coating deposition is usually quite slow
Applications
 PVD coatings are generally used to improve
Hardness, Wear Resistance And Oxidation
Resistance.
 Thus, such coatings use in a wide range of
applications such as:
 Aerospace
 Automotive
 Surgical/Medical
 Dies and moulds for all manner of material
processing
 Cutting tools
 Fire arms 2626 Appications 26
DIFFERENCE BETWEEN PVD AND CVD
PVD uses Physical Processes
only
While CVD Primarily uses
Chemical processes
PVD typically uses a Pure
source material
while CVD uses a Mixed
source material
Difference
Chemical Vaour Deposition & Physical Vapour Deposition techniques.

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Chemical Vaour Deposition & Physical Vapour Deposition techniques.

  • 1. Chemical Vapour Deposition & Physical vapour deposition Presented by; Tapan Patel Department Of Nanotechnology, V.V.P. Engineering College , Rajkot
  • 2. OUTLINE  Introduction  CVD apparatus  CVD process  Advantages & Disadvantages  Application of CVD  PVD Process  Varients of PVD  Advantages & Disadvantages  Application of PVD  Difference Between PVD & CVD
  • 3. CHEMICAL VAPOUR DEPOSITION CVD is the formation of a non-volatile solid film on a substrate by the reaction of vapor phase chemicals (reactants) that contain the required constituents. The reactant gases are introduced into a reaction chamber and are decomposed and reacted at a heated surface to form the thin film.
  • 4. CVD APPARATUS  Gas delivery system – For the supply of precursors to the reactor chamber  Reactor chamber – Chamber within which deposition takes place  Substrate loading mechanism – A system for introducing and removing substrates, mandrels etc.  Energy source – Provide the energy/heat that is required to get the precursors to react/decompose.  Vacuum system – A system for removal of all other gaseous species other than those required for the reaction/deposition.
  • 5. CONTI…  Exhaust system – System for removal of volatile by- products from the reaction chamber.  Exhaust treatment systems – In some instances, exhaust gases may not be suitable for release into the atmosphere and may require treatment or conversion to safe/harmless compounds.  Process control equipment – Gauges, controls etc.. to monitor process parameters such as pressure, temperature and time. Alarms and safety devices would also be included in this category.
  • 6. Steps involved in a CVD process (schematic) 1. Transport of reactants by forced convection to the deposition region. 2. Transport of reactants by diffusion from the main gas stream through the boundary layer to the wafer surface.
  • 7. 3. Adsorption of reactants on the wafer surface. 4. Surface processes, including chemical decomposition or reaction, surface migration to attachment sites (such as atomic-level ledges and kinks), site incorporation, and other surface reactions. 5. Desorption of byproducts from the surface. 6. Transport of byproducts by diffusion through the boundary layer and back to the main gas stream. 7. Transport of byproducts by forced convection away from the deposition region. Conti…..
  • 8. Conti…………. Advantages:  High growth rates possible  Can deposit materials which are hard to evaporate  Good reproducibility  Can grow epitaxial films
  • 10. APPLICATION  Coatings –  Such as wear resistance,  Corrosion resistance,  High temperature protection,  Erosion protection and  Combinations thereof.  Semiconductors and related devices –  Integrated circuits,  Sensors and  Optoelectronic devices
  • 11. Conti….  Dense structural parts – CVD can be used to produce components that are difficult or uneconomical to produce using conventional fabrication techniques. Dense parts produced via CVD are generally thin walled and maybe deposited onto a mandrel or former.  Optical Fibers – For telecommunications.
  • 12. Conti ………………  Composites – Preforms can be infiltrated using CVD techniques to produce ceramic matrix composites such as carbon-carbon, carbon-silicon carbide and silicon carbide-silicon carbide composites. This process is sometimes called chemical vapour infiltration or CVI.  Powder production – Production of novel powders and fibers  Catalysts  Nano machines
  • 13. Physical Vapour Déposition(PVD)  Physical Vapour Deposition (PVD) is fundamentally a vaporization coating technique, involving transfer of material on an atomic level.  It is an alternative process to electroplating  The process is similar to chemical vapour deposition (CVD) except that the raw materials/precursors,  i.e. the material that is going to be deposited starts out in solid form, whereas in CVD, the precursors are introduced to the reaction chamber in the gaseous state.
  • 14. Conti ……. • Working Concept PVD processes are carried out under vacuum conditions. The process involved four steps: 1.Evaporation 2.Transportation 3.Reaction 4.Deposition
  • 15. Conti… Reaction  In some cases coatings will consist of metal oxides, nitrides, carbides and other such materials.  In these cases, the target will consist of the metal.  The atoms of metal will then react with the appropriate gas during the transport stage.  For the above examples, the reactive gases may be oxygen, nitrogen and methane. In instances where the coating consists of the target material alone, this step would not be part of the process.
  • 16.
  • 18. VARIENTS OF PVD Evaporative Deposition In which the material to be deposited is heated to a high vapor pressure by electrically resistive heating in "high" vacuum 18 Evaporation
  • 19. ELECTRON BEAM PHYSICAL VAPOR DEPOSITION In which the material to be deposited is heated to a high vapor pressure by electron bombardment in "high" vacuum. Electron Beam Physical Vapour Deposition
  • 20. SPUTTER DEPOSITION In which a glow plasma discharge (usually localized around the "target" by a magnet) bombards the material sputtering some away as a vapor Sputter deposition
  • 21. CATHODIC ARC DEPOSITION In which a high power arc directed at the target material blasts away some into a vapor. CAD
  • 22. PULSED LASER DEPOSITION In which a high power laser ablates material from the target into a vapor. PLD
  • 23. Importance of PVD Coatings  PVD coatings are deposited for numerous reasons. Some of the main ones are:  Improved hardness and wear resistance  Reduced friction  Improved Oxidation resistance  The use of such coatings is aimed at improving efficiency through improved performance and longer component life.  They may also allow coated components to operate in environments that the uncoated component would not otherwise have been able to perform. 23
  • 24. Advantages  Materials can be deposited with improved properties compared to the substrate material  Almost any type of inorganic material can be used as well as some kinds of organic materials  The process is more environmentally friendly than processes such as electroplating. 24
  • 25. DISADVANTAGES  It is a line of sight technique meaning that it is extremely difficult to coat undercuts and similar surface features  High capital cost  Some processes operate at high vacuums and temperatures requiring skilled operators  Processes requiring large amounts of heat require appropriate cooling systems  The rate of coating deposition is usually quite slow
  • 26. Applications  PVD coatings are generally used to improve Hardness, Wear Resistance And Oxidation Resistance.  Thus, such coatings use in a wide range of applications such as:  Aerospace  Automotive  Surgical/Medical  Dies and moulds for all manner of material processing  Cutting tools  Fire arms 2626 Appications 26
  • 27. DIFFERENCE BETWEEN PVD AND CVD PVD uses Physical Processes only While CVD Primarily uses Chemical processes PVD typically uses a Pure source material while CVD uses a Mixed source material Difference