Racetrack
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Racetrack memory is a new type of non-volatile memory that stores data by moving magnetic domains along a nanoscopic wire using electric current. It can read and write data much faster than existing storage technologies and enable devices to store vastly more data at a lower cost. Racetrack memory works by moving magnetic domains along a U-shaped nanowire using spin-polarized electric current and reading/writing the domains as they pass over magnetic sensors. It has the potential to revolutionize data storage and computing by providing vastly higher storage capacities than existing technologies in a smaller space.
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for presenting students only:)
a clear concept and useful for 10 minute presentation.
images that helps you to discribe the slides.
have fun:) keep remember that this is basic concepts so i preffer it for MCA andCE students only. thank you.
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The document summarizes several older data storage technologies including magnetic tape, floppy disks, optical disks, and USB flash drives. It then discusses a new experimental atomic-scale magnetic memory that can store a bit using just 12 atoms, which is over 100 times denser than today's hard drives. The technology works by harnessing antiferromagnetism at the atomic scale. Potential applications include supercomputers, online databases, military databases, and satellites. However, issues remain around integrating the scanning tunneling microscope required to read and write bits as well as operating the memory above absolute zero.
Nvram applications in the architectural revolutions of main memory implementa...
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TRANSPARENT ELECTRONICS
This document discusses transparent electronics and the potential applications of this emerging technology. It notes that for electronic devices to be transparent, the materials used like semiconductors, contacts and dielectrics must also be transparent. Some potential applications mentioned include touch screens, solar cells, displays, and smart windows. The document outlines three goals for developing this technology: discovering transparent materials, implementing them in transistors and circuits, and achieving application-specific properties. It provides examples of passive and active transparent devices like resistors, capacitors, inductors and thin-film transistors. Recent advances in technologies like transparent memory and potential future applications like augmented reality are also discussed.
Emerging Memory Technologies
The processor caches, main memory and storage system is an integral part of any computer system. As information begins to accumulate, higher density and long term storage solutions are necessary. Due to this, computer architects face some level of challenges in developing reliable, energy-efficient and high performance memories. Also, existing storage devises are degrading in performance, cost, and sizes. Power consumption from the factory has increased, as newer codes are written, and server hardware capabilities are not adequate to handle big data of the future. New emerging memories (NEMs) are presently with its properties likely to open doors to innovative memory designs to solve the problems. This paper looks at the features of the emerging memory technologies, and compares incumbent memories types with the expected future memories.
Spintronics
1. Spintronics uses electron spins in addition to or instead of electron charge to manipulate, store, and transfer information. This could help overcome limitations of Moore's Law as transistors reach nanoscale dimensions.
2. In spintronic devices, information is represented by the orientation of electron spin (up or down), analogous to 1s and 0s in binary. Certain materials can retain spin orientation when power is off, enabling non-volatile memory.
3. Spintronic devices like GMR spin valves and magnetic tunnel junctions in MRAM can switch between low and high resistance states by altering the relative alignment of magnetic layers, allowing them to represent bits. MRAM promises high density, speed and non
Spintronics
Spintronics is an emerging field that uses electron spin rather than charge to carry information. It promises devices with enhanced functionality, higher speeds, and lower power consumption compared to traditional electronics. Spintronic devices work by manipulating the spin states of electrons and exploiting the spin properties of ferromagnetic materials. Potential applications include magnetic RAM, magnetic sensors, and spin transistors. Spintronics may enable smaller, more energy efficient devices and overcome limitations of Moore's Law.
Spintronics
Spintronics is an emerging field that uses electron spin rather than charge to carry information. It promises devices with enhanced functionality, higher speeds, and lower power consumption compared to traditional electronics. Spintronic devices work by manipulating the spin states of electrons in ferromagnetic materials using magnetic fields. Potential applications include magnetic RAM that retains data when power is off, magnetic sensors, and spin transistors. Spintronics may enable smaller, more energy efficient devices and become comparable to electronics within 10 years due to its non-dissipative nature.
Data remanence in semiconductor devices
This document provides an overview of data remanence issues in semiconductor devices. It discusses how data can remain in semiconductor memory cells and other areas of devices through various effects even after deletion. The document begins by explaining semiconductor physics concepts like energy bands and doping to introduce p-type and n-type materials. It then describes common semiconductor memory technologies like SRAM, DRAM, and EEPROM, focusing on their basic cell designs. The document emphasizes that data remanence can occur not just in obvious memory areas but also through other device effects like hot carriers and electromigration.
presentation on spintronics by prince kushwaha
This document provides an overview of spintronics presented by Prince Kushwahe. It introduces spintronics as a field that utilizes the spin of electrons in addition to their charge. Future demands for spintronics are discussed due to limitations of Moore's Law. Key devices are summarized including giant magnetoresistance, spin valves, tunnel magnetoresistance, and magnetic RAM. Research areas like spin transistors, magnetic semiconductors, and spin injection are also covered. The document concludes that spintronics may lead to new devices fusing logic, storage, and sensing to advance computing.
Spintronics ( IEEE presentation )
IEEE presentation based on Spintronics & its semiconductor application specifically.
In the conclusion there is a hyperlink of a video which i'm unable to put here and hence i will give you the address of the video so that you can use the video and make the same hyperlink as i had made here.
TEDxCaltech-David Awschalom - Spintronics ( On YouTube)
video : 6:21- 7:13 (in video)
SRAM BASED IN-MEMORY MATRIX VECTOR MULTIPLIER
This document describes an SRAM-based in-memory matrix vector multiplier. It discusses using SRAM cells to perform matrix vector multiplication operations directly in memory. The weights stored in the SRAM cells are converted to analog voltages using a DAC. A switched capacitor circuit then multiplies the analog voltages by a digital input vector. Finally, charge sharing is used to sum the output voltages along each column. The circuit size, power consumption, and calculation time scale linearly with the architecture. Analytical formulas are provided for energy usage. The impact of manufacturing variations on precision is also examined.
Design and Performance Evaluation of a 64-bit SRAM Memory Array Utilizing Mod...
This document summarizes a research paper that designed and evaluated the performance of a 64-bit SRAM memory array using modern deep submicron technology. The key points are:
1) A 64-bit SRAM memory array was designed using a 1-bit 7T SRAM cell and implemented in a 8x8 bit configuration using CMOS technology and a 0.7 volt supply.
2) The 7T SRAM cell design aimed to reduce leakage power during read/write operations and improve noise immunity at low voltages.
3) Simulation results showed the 64-bit SRAM array had lower read and write power consumption compared to 8T and 7T SRAM designs.
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Racetrack
- 1. SEMINAR ON RACETRACK
- 5. Fig:- OVERVIEW OF RACETRACK MEMORY ORGANISATION
- 9. MRAM CELL
- 12. THANKS…….