SPICE MODEL of 2SK4063LS (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: 2SK4063LS
MANUFACTURER: SANYO
REMARK: Body Diode (Professional Model)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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3. Transconductance Characteristic
Circuit Simulation Result
25
Measurement
Simulation
20
15
gfs(S)
10
5
0
0.0 2.0 4.0 6.0 8.0 10.0
Drain Current ID (A)
Comparison table
gfs(S)
Id(A) Error (%)
Measurement Simulation
1 8.400 8.818 4.98
2 11.600 12.035 3.75
5 17.500 17.788 1.65
10 23.100 23.431 1.43
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4. Vgs-Id Characteristic
Circuit Simulation result
30A
25A
20A
15A
10A
5A
0A
0V 2V 4V 6V 8V 10V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1
2SK4063LS V2
20
V1
0Vdc
0
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5. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
1 5.300 5.394 1.77
2 5.500 5.490 -0.19
5 5.700 5.689 -0.19
10 5.950 5.931 -0.32
20 6.300 6.302 0.02
30 6.600 6.609 0.14
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6. Rds(on) Characteristic
Circuit Simulation result
8.0A
7.0A
6.0A
5.0A
4.0A
3.0A
2.0A
1.0A
0A
0V 1.0V 2.0V 3.0V
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
VDS
U1
2SK4063LS
0Vdc
V1
10
0
Simulation Result
ID = 8A, VGS = 15V Measurement Simulation Error (%)
R DS (on)  0.300 0.300 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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7. Gate Charge Characteristic
Circuit Simulation result
10V
9V
8V
7V
6V
5V
4V
3V
2V
1V
0V
0 10n 20n 30n 40n 50n
V(W1:3)
Time*1mA
Evaluation circuit
I2
U1 D2
2SK4063LS Dbreak 16
PER = 1000u W1
PW = 600u +
TF = 5n VDD
TR = 5n -
TD = 0 I1 W
I2 = 1m IOFF = 1mA 200
I1 = 0 ION = 0uA
0
Simulation Result
VDD=200V, ID=16A,
Measurement Simulation Error (%)
VGS=10V
Qgs nC 15.200 14.870 -2.17
Qgd nC 15.200 14.841 -2.36
Qg nC 40.000 40.236 0.59
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd (pF)
VDS (V) Error (%)
Measurement Simulation
5.000 499.000 498.600 -0.08
10.000 367.000 366.250 -0.20
15.000 300.000 304.490 1.50
20.000 268.000 266.775 -0.46
25.000 244.000 240.643 -1.38
30.000 220.000 221.143 0.52
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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9. Switching Time Characteristic
Circuit Simulation result
14V
12V
10V
8V
6V
4V
2V
0V
0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us 1.4us
V(U1:G) V(U1:D)/20
Time
Evaluation circuit
L2 RL
50nH 25
U1
R1 L1 2SK4063LS
VDD
V1 = 0 30nH 203Vdc
V2 = 20 V2 50
TD = 1u
TR = 5n R2
TF = 5n 50
PW = 10u
PER = 20u
0
Simulation Result
ID=8A, VDD=200V
Measurement Simulation Error(%)
VGS=0/10V
tdon ns 55.000 54.992 -0.01
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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10. Output Characteristic
Circuit Simulation result
50A
15V, 10V
45A 8V
40A
35A
30A
25A
20A
15A
6V
10A
5A
VGS=5V
0A
0V 5V 10V 15V 20V 25V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1 V2
2SK4063LS
V1 25
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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11. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
10mA
0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(Vsense)
V_VSD
Evaluation Circuit
Vsense
0Vdc
U1
VSD 2SK4063LS
0
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12. Comparison Graph
Circuit Simulation Result
Simulation Result
VSD(V)
IDR(A) %Error
Measurement Simulation
0.01 0.5500 0.5471 -0.53
0.02 0.5650 0.5649 -0.03
0.05 0.5900 0.5886 -0.23
0.1 0.6050 0.6071 0.34
0.2 0.6250 0.6262 0.20
0.5 0.6550 0.6541 -0.13
1 0.6800 0.6794 -0.09
2 0.7150 0.7120 -0.41
5 0.7800 0.7782 -0.22
10 0.8600 0.8607 0.08
20 0.9900 0.9958 0.59
30 1.1200 1.1170 -0.27
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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13. Reverse Recovery Characteristics
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
12us 14us 16us 18us 20us 22us 24us 26us 28us 30us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.40v V1
V2 = 10.60v
TD = 0us U1
TR = 10ns D2SK4063LS_P
TF = 10ns
PW = 20us
PER = 50us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj us 0.600 0.599 -0.24
trb us 0.640 0.644 0.55
trr us 1.240 1.242 0.17
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14. Reverse Recovery Characteristic Reference
Measurement
Trj=0.60(us)
Trb=0.64(us)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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