SPICE MODEL of 2SK3843 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: 2SK3843
MANUFACTURER: TOSHIBA
Body Diode (Professional) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Transconductance Characteristic
Circuit Simulation Result
80
60
gfs
40
20
Measurement
Simulation
0
0 4 8 12 16 20
ID(A)
Comparison table
gfs
Id(A) Error (%)
Measurement Simulation
1 15.625 15.152 -3.027
2 22.222 21.277 -4.253
5 33.333 33.557 0.672
10 47.619 47.393 -0.475
20 66.667 66.890 0.334
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Vgs-Id Characteristic
Circuit Simulation result
200A
150A
100A
50A
0A
0V 2V 4V 6V 8V 10V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1
V2
2SK3843
V1 15
5
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Comparison Graph
Circuit Simulation Result
Measurement
Simulation
17
13
ID - Drain Current (A)
9
5
1
0 2 4 6 8 10
VGS - Gate to Source Voltage - V
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
1 2.9 2.9145 0.500
2 3 2.9708 -0.973
5 3.15 3.0828 -2.133
10 3.25 3.2091 -1.258
20 3.45 3.3880 -1.797
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. Rds(on) Characteristic
Circuit Simulation result
38A
30A
20A
10A
0A
0V 40mV 80mV 120mV 160mV 200mV
I(V2)
V_V3
Evaluation circuit
V2
0Vdc
U2
V3
2SK3843 0Vdc
V1
10
0
Simulation Result
ID=38A, VGS=10V Measurement Simulation Error (%)
R DS (on) 2.7 m 2.623  -2.852
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Gate Charge Characteristic
Circuit Simulation result
10V
8V
6V
4V
2V
0V
0s 100ns 200ns 300ns
V(W1:3)
Time*1m
Evaluation circuit
RON = 1.0
ROFF = 1e6 U1
ION = 0
IOFF = 100u
W1
+ I2
2SK3843 D1
-
Dbreak
W 75
I1
I1 = 0
I2 = 1m V1
TD = 0
TR = 10n
TF = 10n
PW = 300u 32
PER = 500u
0
Simulation Result
VDD=32V,ID=75A Measurement Simulation Error (%)
Qgs 40 nC 40.430 nC 1.075
Qgd 55 nC 54.398 nC -1.095
Qg 225 nC 225.285 nC 0.127
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 2950 2935 -0.508
0.2 2650 2675 0.943
0.5 2150 2140 -0.465
1 1700 1702 0.118
2 1250 1280 2.400
5 850 835 -1.765
10 600 590 -1.667
20 420 415 -1.190
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. Switching Time Characteristic
Circuit Simulation result
20V
15V
10V
5V
0V
1.75us 2.00us 2.25us 2.50us
V(U1:G) V(U1:D)/2
Time
Evaluation circuit
L1 R2
50nH
0.53
U1
L2
V1
V1 = 0 V2 30nH
V2 = 10 20
TD = 2u R4 2SK3843
TR = 6n
TF = 7n 4.7
PW = 10u
PER = 30u
0
Simulation Result
ID=38 A, VDD=20V
Measurement Simulation Error(%)
VGS=0/10V
ton 40.000 ns 40.188 ns 0.47
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Output Characteristic
Circuit Simulation result
200A
5 4.75
4.5
160A
4.25
120A
4
80A
3.75
40A 3.5
VGS=3.25 V
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U1
2SK3843
Vv ariable
Vstep
5
3.25
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. Forward Current Characteristic
Circuit Simulation Result
1.0KA
100A
10A
1.0A
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
U1
V1 2SK3843
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
100
Measurement
Simulation
Drain reverse current IDR(A)
10
1
0 0.4 0.8 1.2 1.6 2
Source-Drain voltage VSD(V)
Simulation Result
VSD(V)
Ifwd(A) Measurement Simulation %Error
1 0.67 0.668 -0.299
2 0.685 0.687 0.292
5 0.715 0.718 0.420
10 0.75 0.749 -0.133
20 0.79 0.788 -0.253
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
14.8us 15.0us 15.2us 15.4us 15.6us
I(RL)
Time
Evaluation Circuit
RL
50
V1 = -9.33 V1
V2 = 10.65 U1
TD = 0
TR = 10n D2SK3843
TF = 10n
PW = 15u
PER = 100u
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
Trj(ns) 26 26.032 0.123
Trb(ns) 220 219.361 -0.290
Trr(ns) 246 245.393 -0.247
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Reverse Recovery Characteristic Reference
Trj=26(ns)
Trb=220(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result
10mA
5mA
0A
0V 25V 50V
I(R1)
V_V1
Evaluation Circuit
U1
R1
0.01m
2SK3843 R2
V1
0Vdc 1G
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006