SPICE MODEL of 2SJ334 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: MOSFET (Model Parameter)
PART NUMBER: 2SJ334
MANUFACTURER: TOSHIBA
Body Diode (Model Parameter) / ESD Protection
Bee Technologies Inc.
.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. MOSFET MODEL PARAMETERS
PSpice model
Model description
parameters
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO rface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Transconductance Characteristic
Circuit Simulation Result
28
Measurement
Simulation
24
20
16
GFS(s)
12
8
4
0
0 5 10 15 20 25
DRIAN CURRENT - ID (A)
Comparison table
Gfs(S)
Id(A) Error(%)
Measurement Simulation
-1.000 4.100 4.230 3.171
-2.000 7.900 8.070 2.152
-5.000 12.500 12.729 1.832
-10.000 18.000 17.690 -1.722
-20.000 24.000 23.161 -3.496
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Vgs-Id Characteristic
Circuit Simulation result
-20A
-16A
-12A
-8A
-4A
0A
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U10
2SJ334
V2
V1
-10
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Comparison Graph
Circuit Simulation Result
20
Measurement
Simulation
16
Drain Current - Id (A)
12
8
4
0
0 1 2 3 4 5
Gate-Source Voltage - Vgs (V)
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
-0.200 -2.000 -2.057 2.850
-0.500 -2.120 -2.144 1.132
-1.000 -2.300 -2.241 -2.565
-2.000 -2.400 -2.377 -0.958
-5.000 -2.600 -2.656 2.154
-10.000 -3.000 -2.988 -0.400
-20.000 -3.490 -3.486 -0.115
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. Rds(on) Characteristic
Circuit Simulation result
-14A
-12A
-10A
-8A
-6A
-4A
-2A
0A
0V -100mV -200mV -300mV -400mV
I(V2)
V_VDS
Evaluation circuit
V2
0Vdc
U10
2SJ334
0Vdc
VGS VDS
-10Vdc
0
Simulation Result
ID=-15A, VGS=-10V Measurement Simulation Error (%)
R DS (on) 29.000 m 29.000 m 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Gate Charge Charact eristic
Circuit Simulation Result
16V
12V
8V
4V
0V
0 40n 80n 120n 160n 200n
-V(W1:4)
Time*1mA
Evaluation Circuit
ION = 0uA
IOFF = 1mA
W D2 I2
-
I1 = 0 + 30
I1 Dbreak
I2 = 1m W1 U10
TD = 0 2SJ334
TR = 10n V1
TF = 10n
PW = 600u
PER = 1000u -48
0
Simulation Result
VDD=-48V,
ID= -30A Measurement Simulation Error (%)
,VGS=-10V
Qgs 13.000 nC 12.807 nC -1.485
Qgd 38.000 nC 36.842 nC -3.047
Qg 107.000 nC 23.087 nC -78.423
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.100 3600.000 3500.000 -2.778
0.200 3200.000 3250.000 1.563
0.500 2700.000 2750.000 1.852
1.000 2300.000 2300.000 0.000
2.000 1900.000 1850.000 -2.632
5.000 1350.000 1300.000 -3.704
10.000 1000.000 1000.000 0.000
20.000 750.000 740.000 -1.333
50.000 480.000 500.000 4.167
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. Switching Time Charac teristic
Circuit Simulation Result
-14V
-12V
-10V
-8V
-6V
-4V
-2V
0V
1.98us 2.00us 2.05us 2.10us 2.13us
V(L1:2) V(L2:1)/3
Time
Evaluation Circuit
L2 R2
2
50nH
-30Vdc
RG L1
U10 V1
PER = 2000u
PW = 10u 30nH 2SJ334
TF = 1n 4.7
TR = 1n R1
TD = 2u
V2 = 20 V2 4.7
V1 = 0
0
Simulation Result
ID=-15A,
VDD= -30V, Measurement Simulation Error(%)
VGS=-10V
Td(on) 25.000 ns 25.145 ns 0.585
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Output Characteristic
Circuit Simulation Result
-50A
-6
-8
-40A
-10
-4V
-30A
3.5 V
-20A
VGS = -3V
-10A
0A
0V -2V -4V -6V -8V -10V
I(V3)
V_V2
Evaluation Circuit
V3
0Vdc
U10
2SJ334
V2
V1
0
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc U25
2SJ334
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
100
Measurement
Simulation
DRAIN REVERSE CURRENT IDR (A)
10
1
0 0.4 0.8 1.2 1.6 2
SOURCE-DRAINE VOLTAGE VSD (V)
Simulation Result
VSD(V)
IDR(A) %Error
Measurement Simulation
1.000 0.680 0.658 -3.235
2.000 0.700 0.692 -1.143
5.000 0.740 0.749 1.216
10.000 0.800 0.810 1.250
20.000 0.900 0.896 -0.444
50.000 1.080 1.070 -0.926
100.000 1.300 1.304 0.308
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Reverse Recovery Characteristic (Body Diode)
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
0.4us 0.8us 1.2us 1.6us 2.0us 2.4us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.4v V1
V2 = 10.6v U26
TD = 30n
TR = 10ns 2SJ334
TF = 23ns
PW = 1us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 60.000 ns 60.554 ns 0.923
trb 300.000 ns 329.825 ns 9.942
trr 360.000 ns 390.379 ns 8.439
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Reverse Recovery Characteristic (Body Diode) Reference
Trj= (60ns)
Trb= (300ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U20
0Vdc
2SJ334
I1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006