SPICE MODEL of 2SJ334 (Professional+BDP Model) in SPICE PARK

Device Modeling Report

COMPONENTS: MOSFET (Professional)
PART NUMBER: 2SJ334
MANUFACTURER: TOSHIBA
Body Diode (Professional) / ESD Protection

Bee Technologies Inc.

.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

MOSFET MODEL PARAMETERS

PSpice
model Model description
parameters
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility


Transconductance Characteristic

Circuit Simulation Result

28
Measurement
Simulation
24

20

16
GFS(s)

12

8

4

0
0 5 10 15 20 25
DRIAN CURRENT - ID (A)

Comparison table

Gfs(S)
Id(A) Error(%)
Measurement Simulation
-1.000 4.100 4.230 3.171
-2.000 7.900 8.070 2.152
-5.000 12.500 12.729 1.832
-10.000 18.000 17.690 -1.722
-20.000 24.000 23.161 -3.496


Vgs-Id Characteristic

Circuit Simulation result

-20A

-16A

-12A

-8A

-4A

0A
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
V_V1

Evaluation circuit

V3

0Vdc

U10

2SJ334

V2
V1

-10
0

0


Comparison Graph


20
Measurement
Simulation

16
Drain Current - Id (A)

12

8

4

0
0 1 2 3 4 5

Gate-Source Voltage - Vgs (V)

Simulation Result

VGS(V)
ID(A) Error (%)
-0.200 -2.000 -2.057 2.850
-0.500 -2.120 -2.144 1.132
-1.000 -2.300 -2.241 -2.565
-2.000 -2.400 -2.377 -0.958
-5.000 -2.600 -2.656 2.154
-10.000 -3.000 -2.988 -0.400
-20.000 -3.490 -3.486 -0.115


Rds(on) Characteristic

Circuit Simulation result

-14A

-12A

-10A

-8A

-6A

-4A

-2A

0A
0V -100mV -200mV -300mV -400mV
I(V2)
V_VDS

Evaluation circuit

V2

0Vdc

U10

2SJ334
0Vdc
VGS VDS
-10Vdc

0

Simulation Result

ID=-15A, VGS=-10V Measurement Simulation Error (%)
R DS (on) 29.000 m 29.000 m 0.000

Gate Charge Characteristic

16V

12V

8V

4V

0V
0 40n 80n 120n 160n 200n
-V(W1:4)
Time*1mA
Evaluation Circuit

ION = 0uA
IOFF = 1mA
W D2 I2
-
I1 = 0 + 30
I1 Dbreak
I2 = 1m W1 U10
TD = 0 2SJ334
TR = 10n V1
TF = 10n
PW = 600u
PER = 1000u -48

0

Simulation Result

VDD=-48V,
ID= -30A Measurement Simulation Error (%)
,VGS=-10V
Qgs 13.000 nC 12.456 nC -4.185
Qgd 38.000 nC 37.895 nC -0.276
Qg 107.000 nC 107.018 nC 0.017

Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd(pF)
VDS(V) Error(%)
0.100 3600.000 3500.000 -2.778
0.200 3200.000 3250.000 1.563
0.500 2700.000 2750.000 1.852
1.000 2300.000 2300.000 0.000
2.000 1900.000 1850.000 -2.632
5.000 1350.000 1300.000 -3.704
10.000 1000.000 1000.000 0.000
20.000 750.000 740.000 -1.333
50.000 480.000 500.000 4.167


Switching Time Characteristic


-14V

-12V

-10V

-8V

-6V

-4V

-2V

0V
1.98us 2.00us 2.05us 2.10us 2.13us
V(L1:2) V(L2:1)/3
Time

Evaluation Circuit

L2 R2

2
50nH

-30Vdc
RG L1
U10 V1
PER = 2000u
PW = 10u 30nH 2SJ334
TF = 1n 4.7
TR = 1n R1
TD = 2u
V2 = 20 V2 4.7
V1 = 0

0

Simulation Result

ID=-15A,
VDD= -30V, Measurement Simulation Error(%)
VGS=-10V
Td(on) 25.000 ns 25.146 ns 0.584


Output Characteristic


-50A

-6
-8
-40A
-10
-4V

-30A

3.5 V
-20A

VGS = -3V
-10A

0A
0V -2V -4V -6V -8V -10V
I(V3)
V_V2

Evaluation Circuit

V3

0Vdc

U10

2SJ334

V2
V1

0
0

0


Forward Current Characteristic


100A

10A

1.0A
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(R1)
V_V1

Evaluation Circuit

R1
0.01m

V1
0Vdc U25

2SJ334

0


Comparison Graph


100
Measurement
Simulation
DRAIN REVERSE CURRENT IDR (A)

10

1
0 0.4 0.8 1.2 1.6 2
SOURCE-DRAINE VOLTAGE VSD (V)

Simulation Result

VSD(V)
IDR(A) %Error
1.000 0.680 0.658 -3.235
2.000 0.700 0.692 -1.143
5.000 0.740 0.749 1.216
10.000 0.800 0.810 1.250
20.000 0.900 0.896 -0.444
50.000 1.080 1.070 -0.926
100.000 1.300 1.304 0.308


Reverse Recovery Characteristic (Body Diode)


400mA

300mA

200mA

100mA

-0mA

-100mA

-200mA

-300mA

-400mA
0.4us 0.8us 1.2us 1.6us 2.0us 2.4us
I(R1)
Time

Evaluation Circuit

R1

50

U25

V1 = -9.4v V1
V2 = 10.6v
TD = 22n
TR = 10ns
TF = 23ns
PW = 1us
PER = 100us D2SJ334_PRO

0
R1

Compare Measurement vs. Simulation
50

U25

Measurement
V1
V1 = -9.4v
V2 = 10.6v Simulation Error (%)
TD = 22n
TR = 10ns
trj TF = 23ns 60.000 ns 59.572 ns -0.713
PW = 1us
trb PER = 100us 300.000 ns
D2SJ334_PRO
294.737 ns -1.754
trr 360.000 ns 354.309 ns -1.581
0


Reverse Recovery Characteristic (Body Diode) Reference

Trj= (60ns)
Trb= (300ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50

Example

Relation between trj and trb


Zener Voltage Characteristic

10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m

V1 U20
0Vdc
2SJ334

I1
0Adc

0


Zener Voltage Characteristic Reference


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