Device Modeling Report Parameters
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SPICE MODEL of 2SK3669 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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Device Modeling Report Parameters
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Model Parameter) PART NUMBER: 2SK3669 MANUFACTURER: TOSHIBA Body Diode (Model Parameter) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 2. Circuit Configuration MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 3. Transconductance Characteristic Circuit Simulation Result 6 Measurement Simulation 5 4 gfs 3 2 1 0 0 1 2 3 4 5 6 ID - Drain Current A Comparison table Id(A) gfs Error(%) Measurement Simulation 0.500 1.700 1.762 3.641 1.000 2.400 2.473 3.042 2.000 3.400 3.461 1.794 5.000 5.300 5.360 1.132 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 4. Vgs-Id Characteristic Circuit Simulation result 20A 16A 12A 8A 4A 0A 0V 4V 8V 12V 16V 20V I(V3) V_V2 Evaluation circuit V3 0Vdc U27 Vv ariable 2SK3669 10Vdc 10Vdc V2 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 5. Comparison Graph Circuit Simulation Result 20.00 Measurement Simulation 16.00 ID : Drain Current A 12.00 8.00 4.00 0.00 0.0 4.0 8.0 12.0 16.0 20.0 VGS : Gate to Source Voltage V Simulation Result ID(A) VGS(V) Error (%) Measurement Simulation 0.500 6.000 5.873 -2.117 1.000 6.200 6.108 -1.484 2.000 6.400 6.450 0.781 5.000 7.200 7.145 -0.764 10.000 8.000 7.979 -0.262 20.000 9.000 9.137 1.522 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 6. Rds(on) Characteristic Circuit Simulation result 6.0A 5.0A 4.0A 3.0A 2.0A 1.0A 0A 0V 200mV 400mV 500mV I(V3) V_VDS Evaluation circuit V3 0Vdc U27 VDS 2SK3669 10Vdc 0Vdc VGS 0 Simulation Result ID=5A, VGS=10V Measurement Simulation Error (%) R DS (on) (m) 95.000 94.600 -0.421 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 7. Gate Charge Characteristic Circuit Simulation result 20V 15V 10V 5V 0V 0 5n 10n 15n 20n V(W1:3) Time*1mS Evaluation circuit V2 0Vdc Dbreak PER = 1000u PW = 600u W1 TF = 10n + U27 D1 TR = 10n 2SK3669 I2 - TD = 0 10Adc I2 = 1m W I1 IOFF = 1mA I1 = 0 ION = 0uA V1 80Vdc 0 Simulation Result VDD=80V,ID=10A Measurement Simulation Error (%) ,VGS=15V Qgs(nc) 3.750 3.639 -2.960 Qgd(nc) 2.400 2.342 -2.417 Qg(nc) 11.500 9.905 -13.870 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 8. Capacitance Characteristic Measurement Simulation Simulation Result VDS(V) Cbd(pF) Error(%) Measurement Simulation 0.100 8.650 8.700 0.578 0.200 8.350 8.400 0.599 0.500 7.700 7.680 -0.260 1.000 6.700 6.700 0.000 2.000 5.400 5.400 0.000 5.000 3.400 3.450 1.471 10.000 2.350 2.400 2.128 20.000 1.550 1.550 0.000 50.000 0.920 0.900 -2.174 100.000 0.614 0.610 -0.651 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 9. Switching Time Characteristic Circuit Simulation result 15V 10V 5V 0V 0.95us 1.00us 1.05us 1.10us 1.15us V(L2:1)/5 V(L1:2) Time Evaluation circuit L2 R2 10nH 5 L1 U30 2SK3669 30nH V1 = 0 V1 V2 = 10 V2 50Vdc TD = 1u R3 TR = 1n TF = 1n 50 PW = 10u PER = 200u 0 Simulation Result ID=10A, VDD=50V Measurement Simulation Error(%) VGS=10V Ton(ns) 12.000 12.523 4.358 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 10. Output Characteristic Circuit Simulation result 20A 15 V 9 .5 V 10 V 9V 16A 8.5V 12A 8.0V 8A 7.5V 4A VGS=6.5V 0A 0V 2V 4V 6V 8V 10V I(Vdsense) V_Vvariable Evaluation circuit Vdsense 0Vdc U29 2SK3669 Vv ariable 10Vdc 10Vdc Vstep 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 11. BODY DIODE SPICE MODEL Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 100mA 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(R1) V_V1 Evaluation Circuit R1 0.01m U28 2SK3669 V1 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 12. Comparison Graph Circuit Simulation Result 100.00 Measurement Simulation Drain reverse current IDR(A) 10.00 1.00 0.10 0 0.5 1 1.5 2 2.5 Source-Drain voltage VSD(V) Simulation Result IDR(A) VDS(V) VDS(V) %Error Measurement Simulation 0.100 0.640 0.644 0.625 0.200 0.660 0.650 -1.515 0.500 0.700 0.685 -2.143 1.000 0.720 0.715 -0.694 2.000 0.780 0.768 -1.538 5.000 0.910 0.902 -0.879 10.000 1.150 1.109 -3.565 20.000 1.490 1.506 1.074 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 13. Reverse Recovery Characteristic Circuit Simulation Result 300mA 200mA 100mA -0mA -100mA -200mA -300mA 4.9us 5.1us 5.3us 5.5us 5.7us 5.9us I(R1) Time Evaluation Circuit R1 50 V1 = -9.4v V1 V2 = 10.7v TD = 270n TR = 10ns TF = 19ns 2SK3669 PW = 5us U30 PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) Trj(ns) 76.000 75.628 -0.418 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 14. Reverse Recovery Characteristic Reference Trj=76 (ns) Trb=42 ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 15. ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic Circuit Simulation Result 200uA 180uA 160uA 140uA 120uA 100uA 80uA 60uA 40uA 20uA 0A 0V 20V 40V 60V 80V 100V 120V 140V 160V 180V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc R2 2SK3669 100MEG U28 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2007