SPICE MODEL of 2SK3662 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameters)
PART NUMBER: 2SK3662
MANUFACTURER: TOSHIBA
Body Diode (Model Parameters) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. Circuit Configuration
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Transconductance Characteristic
Circuit Simulation Result
60
55
50
45
40
35
gfs
30
25
20
15
10 Measurement
5 Simulation
0
1 3 5 7 9 11 13 15 17 19
ID - Drain Current - A
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
1 14.000 14.286 2.043
2 18.000 18.182 1.011
5 29.000 29.412 1.421
10 39.000 40.000 2.564
20 53.000 54.054 1.989
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Vgs-Id Characteristic
Circuit Simulation result
100A
80A
60A
40A
20A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U26
Vv ariable
2SK3662
10Vdc
10Vdc
V2
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. Comparison Graph
Circuit Simulation Result
19.00
Measurement
Simulation
17.00
15.00
13.00
ID - Drain Current - A
11.00
9.00
7.00
5.00
3.00
1.00
1 2 3 4 5
VGS - Gate to Source Voltage - V
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
1 2.600 2.623 0.885
2 2.650 2.686 1.358
5 2.780 2.814 1.223
10 2.900 2.959 2.034
20 3.100 3.166 2.129
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Rds(on) Characteristic
Circuit Simulation result
20A
18A
16A
14A
12A
10A
8A
6A
4A
2A
0A
0V 100mV 200mV 300mV 400mV 500mV
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
U26
VDS
2SK3662
10Vdc
0Vdc
VGS
0
Simulation Result
ID=18A, VGS=10V Measurement Simulation Error (%)
R DS (on) 9.400 m 9.388 m -0.128
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Gate Charge Characteristic
Circuit Simulation result
20V
10V
0V
0 40n 80n 120n 160n
V(W1:3)
Time*1mS
Evaluation circuit
V2
0Vdc
U26 Dbreak
PER = 1000u
PW = 600u W1 2SK3662
TF = 10n + D1
TR = 10n I2
-
TD = 0 35Adc
I2 = 1m W
I1 IOFF = 1mA
I1 = 0 ION = 0uA
V1
48Vdc
0
Simulation Result
VDD=48V,ID=35A
Measurement Simulation Error (%)
,VGS=10V
Qgs(nC) 17.000 17.094 0.553
Qgd(nC) 21.000 21.261 1.243
Qg 91.000 74.606 -18.015
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 900.000 903.452 0.384
0.2 850.000 848.737 -0.149
0.5 700.000 701.000 0.143
1 570.000 570.681 0.119
2 430.000 430.000 0.000
5 280.000 280.000 0.000
10 200.000 199.242 -0.379
20 125.000 126.553 1.242
50 65.000 67.108 3.243
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Switching Time Characteristic
Circuit Simulation result
12V
10V
8V
6V
4V
2V
0V
0.921us 1.000us 1.100us 1.200us 1.299us
V(L2:1)/3 V(L1:2)
Time
Evaluation circuit
L2 R2
5nH
1.67
R1 L1 U29
2SK3662
30nH
V1 = 0 V1
V2 = 20 V2 4.7 30Vdc
TD = 1u R3
TR = 1n
TF = 1n 4.7
PW = 10u
PER = 200u
0
Simulation Result
ID=18 A, VDD=30V
Measurement Simulation Error(%)
VGS=0/10V
Ton(ns) 19.000 19.274 1.442
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. Output Characteristic
Circuit Simulation result
100A
80A
3.8V
60A
3.6.V
40A 3.4V
20A
VGS=3V
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U28
2SK3662 Vv ariable
10Vdc
10Vdc
Vstep
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 2SK3662
0Vdc
U26
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Comparison Graph
Circuit Simulation Result
Measurement
Simulation
41.00
Drain reverse current IDR(A)
31.00
21.00
11.00
1.00
0 0.2 0.4 0.6 0.8 1 1.2
Source-Drain voltage VSD(V)
Simulation Result
VSD(V)
IDR(A) Measuremen Simulation %Error
1 0.670 0.671 0.149
2 0.700 0.699 -0.143
5 0.750 0.747 -0.400
10 0.800 0.802 0.250
20 0.890 0.891 0.112
50 1.120 1.117 -0.268
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
5.16us 5.24us 5.32us 5.40us 5.48us 5.56us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.4v V1
V2 = 10.7v 2SK3662
TD = 245n
TR = 10ns U27
TF = 19ns
PW = 5us
PER = 100us
0
Compare Measurement vs. Simulation
Trr(ns) Measurement Simulation Error (%)
Trj+Trb 94.500 94.950 0.476
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. Reverse Recovery Characteristic Reference
Trj=14.500(ns)
Trb=80.000(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc
R2
2SK3662
100MEG
U27
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

17. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006