SPICE MODEL of 2SK3846 (Standard+BDS Model) in SPICE PARK

Device Modeling Report

COMPONENTS: Power MOSFET (Model Parameters)
PART NUMBER: 2SK3846
MANUFACTURER: TOSHIBA
Body Diode (Model Parameters) / ESD Protection Diode

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

Circuit Configuration


MOSFET MODEL

PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility


Transconductance Characteristic

Circuit Simulation Result

50

45

40

35

30
gfs

25

20

15

10
Measurement
5 Simulation

0
1 3 5 7 9 11 13 15 17 19
ID - Drain Current - A

Comparison table

gfs
Id(A) Error(%)
Measurement Simulation
1 9.000 9.091 1.011
2 11.500 11.765 2.304
5 17.500 17.857 2.040
10 24.000 24.39 1.625
20 33.800 34.483 2.021


Vgs-Id Characteristic

Circuit Simulation result

100A

80A

60A

40A

20A

0A
0V 2V 4V 6V 8V 10V
I(V3)
V_V2

Evaluation circuit

V3

0Vdc

U25 Vv ariable
10Vdc
2SK3846
10Vdc

V2

0


Comparison Graph


19.00
Measurement
Simulation
17.00

15.00

13.00
ID - Drain Current - A

11.00

9.00

7.00

5.00

3.00

1.00
1 2 3 4 5
VGS - Gate to Source Voltage - V

Simulation Result

VGS(V)
ID(A) Error (%)
1 2.800 2.855 1.964
2 2.900 2.955 1.897
5 3.100 3.158 1.871
10 3.350 3.387 1.104
20 3.650 3.711 1.671


Rds(on) Characteristic


16A

14A

12A

10A

8A

6A

4A

2A

0A
0V 100mV 200mV 300mV 400mV 500mV
I(V3)
V_VDS

Evaluation circuit

V3

0Vdc

U25 VDS

10Vdc 2SK3846
0Vdc

VGS

0

Simulation Result

ID=13A, VGS=10V Measurement Simulation Error (%)
R DS (on) 0.012  0.012  0


Gate Charge Characteristic

20V

10V

0V
0 20n 40n 60n 80n 100n
V(W1:3)
Time*1mS
Evaluation circuit

V2

0Vdc

Dbreak
PER = 1000u U25
PW = 600u W1
TF = 10n + 2SK3846 D1
TR = 10n I2
-
TD = 0 26Adc
I2 = 1m W
I1 IOFF = 1mA
I1 = 0 ION = 0uA

V1
32Vdc

0

Simulation Result

VDD=32V,ID=26A
Measurement Simulation Error (%)
,VGS=10V
Qgs(nC) 5.000 5.000 0
Qgd(nC) 12.000 12.002 0.017
Qg 40.000 26.394 -34.015


Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd(pF)
VDS(V) Error(%)
0.1 350.000 348.090 -0.546
0.2 330.000 333.074 0.932
0.5 290.000 291.352 0.466
1 240.000 242.115 0.881
2 190.000 191.780 0.937
5 130.000 130.452 0.348
10 100.000 97.045 -2.955
20 60.000 62.426 4.043


Switching Time Characteristic


18V

16V

14V

12V

10V

8V

6V

4V

2V

0V
0.921us 1.000us 1.100us 1.200us 1.299us
V(L2:1)/2 V(U28:G)
Time

Evaluation circuit

L2 R2

10nH
1.54

L1
U28
30nH
V1 = 0 2SK3846 V1
V2 = 10 V2 20Vdc
TD = 1u R3
TR = 1n
TF = 1n 4.7
PW = 10u
PER = 200u

0

Simulation Result

ID=13 A, VDD=20V
Measurement Simulation Error(%)
VGS=0/10V
Ton(ns) 22.000 21.854 -0.664


Output Characteristic


100A

80A

60A 4.5V

4.25V

40A
4.V

3.75V
20A
3.5V

3.25V

VGS=3V
0A
0V 2V 4V 6V 8V 10V
I(Vdsense)
V_Vvariable

Evaluation circuit

Vdsense

0Vdc

U26
Vv ariable
10Vdc 2SK3846

10Vdc

Vstep

0


BODY DIODE SPICE MODEL

Forward Current Characteristic

100A

10A

1.0A
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m

2SK3846
V1
0Vdc U25

0


Comparison Graph


Measurement
Simulation

41.00
Drain reverse current IDR(A)

31.00

21.00

11.00

1.00
0 0.2 0.4 0.6 0.8 1 1.2

Source-Drain voltage VSD(V)
Simulation Result

VSD(V)
IDR(A) Measuremen Simulation %Error
1 0.720 0.723 0.417
2 0.750 0.745 -0.667
5 0.790 0.784 -0.759
10 0.820 0.833 1.585
20 0.910 0.905 -0.549
50 1.100 1.099 -0.091


Reverse Recovery Characteristic

400mA

300mA

200mA

100mA

-0mA

-100mA

-200mA

-300mA

-400mA
5.12us 5.20us 5.28us 5.36us 5.44us 5.52us
I(R1)
Time
Evaluation Circuit

R1

50

V1 = -9.4v V1 D3846
V2 = 10.7v
TD = 255n U25
TR = 10ns
TF = 13ns
PW = 5us
PER = 100us

0

Compare Measurement vs. Simulation

Trr Measurement Simulation Error (%)
Trj+Trb(ns) 43.500 44.704 2.768


Reverse Recovery Characteristic Reference

Trj=7.500(ns)
Trb=36.000(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50

Example

Relation between trj and trb


ESD PROTECTION DIODE SPICE MODEL

Zener Voltage Characteristic

10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m

V1
0Vdc
R2
U26
2SK3846
100MEG

0


Zener Voltage Characteristic Reference


SPICE MODEL of 2SK3846 (Standard+BDS Model) in SPICE PARK

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