SPICE MODEL of 2SK3846 (Professional+BDP Model) in SPICE PARK
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This document summarizes the modeling of a Power MOSFET transistor. It describes the device components, equivalent circuit model, and SPICE model parameters. It also provides simulation results validating the model, comparing measurements to simulations for key transistor characteristics like transconductance, capacitance, switching times and more.
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SPICE MODEL of 2SK3846 (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional) PART NUMBER: 2SK3846 MANUFACTURER: TOSHIBA Body Diode (Professional) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 2. Circuit Configuration All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 3. Equivalent Circuit D S1 - - + + R2 S R1 10MEG DGD 10M CGD S2 + + - - Q1 S G S All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 4. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 5. Transconductance Characteristic Circuit Simulation Result 50 45 40 35 30 gfs 25 20 15 10 Measurement 5 Simulation 0 1 3 5 7 9 11 13 15 17 19 ID - Drain Current - A Comparison table gfs Id(A) Error(%) Measurement Simulation 1 9.000 9.091 1.011 2 11.500 11.765 2.304 5 17.500 17.857 2.040 10 24.000 24.39 1.625 20 33.800 34.483 2.021 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 6. Vgs-Id Characteristic Circuit Simulation result 100A 80A 60A 40A 20A 0A 0V 2V 4V 6V 8V 10V I(V3) V_V2 Evaluation circuit V3 0Vdc U25 Vv ariable 10Vdc 2SK3846 10Vdc V2 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 7. Comparison Graph Circuit Simulation Result 19.00 Measurement Simulation 17.00 15.00 13.00 ID - Drain Current - A 11.00 9.00 7.00 5.00 3.00 1.00 1 2 3 4 5 VGS - Gate to Source Voltage - V Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 1 2.800 2.855 1.964 2 2.900 2.955 1.897 5 3.100 3.158 1.871 10 3.350 3.387 1.104 20 3.650 3.711 1.671 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 8. Rds(on) Characteristic Circuit Simulation result 16A 14A 12A 10A 8A 6A 4A 2A 0A 0V 100mV 200mV 300mV 400mV 500mV I(V3) V_VDS Evaluation circuit V3 0Vdc U25 VDS 10Vdc 2SK3846 0Vdc VGS 0 Simulation Result ID=13A, VGS=10V Measurement Simulation Error (%) R DS (on) 0.012 0.012 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 9. Gate Charge Characteristic Circuit Simulation result 20V 10V 0V 0 20n 40n 60n 80n 100n V(W1:3) Time*1mS Evaluation circuit V2 0Vdc Dbreak PER = 1000u U25 PW = 600u W1 TF = 10n + 2SK3846 D1 TR = 10n I2 - TD = 0 26Adc I2 = 1m W I1 IOFF = 1mA I1 = 0 ION = 0uA V1 32Vdc 0 Simulation Result VDD=32V,ID=26A Measurement Simulation Error (%) ,VGS=10V Qgs(nC) 5.000 5.000 0 Qgd(nC) 12.000 12.000 0 Qg 40.000 40.846 2.115 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 10. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.1 350.000 348.090 -0.546 0.2 330.000 333.074 0.932 0.5 290.000 291.352 0.466 1 240.000 242.115 0.881 2 190.000 191.780 0.937 5 130.000 130.452 0.348 10 100.000 97.045 -2.955 20 60.000 62.426 4.043 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 11. Switching Time Characteristic Circuit Simulation result 18V 16V 14V 12V 10V 8V 6V 4V 2V 0V 0.921us 1.000us 1.100us 1.200us 1.299us V(L2:1)/2 V(U28:G) Time Evaluation circuit L2 R2 10nH 1.54 L1 U28 30nH V1 = 0 2SK3846 V1 V2 = 10 V2 20Vdc TD = 1u R3 TR = 1n TF = 1n 4.7 PW = 10u PER = 200u 0 Simulation Result ID=13 A, VDD=20V Measurement Simulation Error(%) VGS=0/10V Ton(ns) 22.000 21.733 -1.214 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 12. Output Characteristic Circuit Simulation result 100A 80A 60A 4.5V 4.25V 40A 4.V 3.75V 20A 3.5V 3.25V VGS=3V 0A 0V 2V 4V 6V 8V 10V I(Vdsense) V_Vvariable Evaluation circuit Vdsense 0Vdc U26 Vv ariable 10Vdc 2SK3846 10Vdc Vstep 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 13. Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 0V 0.4V 0.8V 1.2V 1.6V 2.0V I(R1) V_V1 Evaluation Circuit R1 0.01m 2SK3846 V1 0Vdc U25 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 14. Comparison Graph Circuit Simulation Result Measurement Simulation 41.00 Drain reverse current IDR(A) 31.00 21.00 11.00 1.00 0 0.2 0.4 0.6 0.8 1 1.2 Source-Drain voltage VSD(V) Simulation Result VSD(V) IDR(A) Measuremen Simulation %Error 1 0.720 0.723 0.417 2 0.750 0.745 -0.667 5 0.790 0.784 -0.759 10 0.820 0.833 1.585 20 0.910 0.905 -0.549 50 1.100 1.099 -0.091 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 15. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 5.12us 5.20us 5.28us 5.36us 5.44us 5.52us I(R1) Time Evaluation Circuit R1 50 V1 = -9.4v V1 D3846 V2 = 10.7v TD = 255n U25 TR = 10ns TF = 13ns PW = 5us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) Trj(ns) 7.500 7.493 -0.093 Trb(ns) 36.000 35.681 -0.886 Trr(ns) 43.500 43.174 -0.749 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 16. Reverse Recovery Characteristic Reference Trj=7.500(ns) Trb=36.000(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 17. Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc R2 U26 2SK3846 100MEG 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 18. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006