SPICE MODEL of TPCA8023-H (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: TPCA8023-H
MANUFACTURER: TOSHIBA
Body Diode (Special Model)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. Circuit Configuration
Equivalent Circuit
D
S1
- -
+ +
R2
S
R1 10MEG DGD
10M CGD
S2
+ +
- -
Q1
S
G
S
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. Transconductance Characteristic
Circuit Simulation Result
60
Measurement
Simulation
50
40
gfs
30
20
10
0
0 2 4 6 8
ID : Drain Current A
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
0.100 0.800 0.806 0.750
0.200 3.500 3.571 2.029
0.500 6.800 7.000 2.941
1.000 10.500 10.869 3.514
2.000 14.500 14.925 2.931
5.000 24.000 24.409 1.704
10.000 30.333 31.348 3.346
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Vgs-Id Characteristic
Circuit Simulation result
40A
32A
24A
16A
8A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1
TPCA8023-H
Vv ariable
10Vdc 10Vdc
V2
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. Comparison Graph
Circuit Simulation Result
Measurement
Simulation
32
ID : Drain Current A
24
16
8
0
0.0 1.0 2.0 3.0 4.0 5.0
VGS : Gate to Source Voltage V
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.100 2.450 2.425 -1.020
0.200 2.470 2.457 -0.526
0.500 2.550 2.500 -1.961
1.000 2.600 2.560 -1.538
2.000 2.700 2.631 -2.556
5.000 2.850 2.781 -2.421
10.000 3.000 2.953 -1.567
20.000 3.250 3.198 -1.600
40.000 3.550 3.554 0.113
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Rds(on) Characteristic
Circuit Simulation result
15A
12A
9A
6A
3A
0A
0V 40mV 80mV 120mV 160mV 200mV
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
U1
TPCA8023-H
VDS
10Vdc 0Vdc
VGS
0
Simulation Result
ID=11A, VGS=10V Measurement Simulation Error (%)
R DS (on) () 0.0098 0.0098 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Gate Charge Characteristic
Circuit Simulation result
20V
16V
12V
8V
4V
0V
0 5n 10n 15n 20n 25n 30n
V(W1:3)
Time*1mS
Evaluation circuit
V2
0Vdc
U1
TPCA8023-H
Dbreak
PER = 1000u D1
PW = 600u W1 I2
TF = 10n + 21Adc
TR = 10n
-
TD = 0
I2 = 1m W
I1 = 0 I1 IOFF = 0.1mA
ION = 0uA V1
24Vdc
0
Simulation Result
VDD=24V,ID=21A
Measurement Simulation Error (%)
,VGS=10V
Qgs(nc) 4.700 4.679 -0.447
Qgd(nc) 3.400 3.397 -0.088
Qg(nc) 21.000 20.962 -0.181
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error (%)
Measurement Simulation
0.100 810.000 812.000 0.250
0.200 770.000 765.000 -0.650
0.500 650.000 655.000 0.770
1.000 545.000 545.000 0.000
2.000 430.000 430.000 0.000
5.000 300.000 295.000 -1.670
10.000 216.000 216.000 0.000
20.000 152.000 153.000 0.660
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Switching Time Characteristic
Circuit Simulation result
16V
14V
12V
10V
8V
6V
4V
2V
0V
1.88us 1.96us 2.04us 2.12us 2.20us 2.28us
V(2) V(3)/1.5
Time
Evaluation circuit
3 L2
50n
U1
TPCA8023-H
RL
1.36
R1 L1 2
V1 = 0 4.7 30nH VDD
V2 = 20 V2 15Vdc
TD = 2u R2
TR = 6n
TF = 7n 4.7
PW = 2u
PER = 10u
0
Simulation Result
ID=11A, VDD=15V
Measurement Simulation Error(%)
VGS=10V
Ton(ns) 9.300 9.338 0.409
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. Output Characteristic
Circuit Simulation result
8 6 5 4.5
20A
3.4
10 4
3.3
16A
3.2
12A
3.1
8A
VGS= 2.9 V
4A
0A
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U1
TPCA8023-H
Vv ariable
0Vdc
10Vdc
Vstep
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc U1
TPCA8023-H
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. Comparison Graph
Circuit Simulation Result
100.000
Measurement
Simulation
Drain reverse current IDR(A)
10.000
1.000
0 0.5 1 1.5
Source: Drain voltage VSD(V)
Simulation Result
VSD(V) VSD(V)
IDR(A) %Error
Measurement Simulation
1.000 0.690 0.687 -0.435
2.000 0.710 0.714 0.563
5.000 0.755 0.758 0.397
10.000 0.800 0.800 0.000
20.000 0.860 0.861 0.116
50.000 1.000 1.000 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Reverse Recovery Characteristics (Body Diode)
Circuit Simulation Result
2.0A
1.5A
1.0A
0.5A
0A
-0.5A
-1.0A
-1.5A
-2.0A
1.40us 1.44us 1.48us 1.52us 1.56us 1.60us 1.64us 1.68us 1.72us 1.76us
I(R1)
Time
Evaluation Circuit
R1 2 Vsense
V1 = -30V PARAMETERS:
TF = 0.975u
V2 = 30V
TD = 18.745n DTPCA8023-H_SP
U1
TR = 10ns
TF = {TF} V1
VPULSE
PW = 1us
PER = 20us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trr 56.00 ns 56.16 ns 0.29
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

15. Reverse Recovery Characteristic (Body Diode) Reference
Trr=56.0ns
Conditions: di/dt=30A/us
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007