SPICE MODEL of 2SK3662 (Standard+BDS Model) in SPICE PARK
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SPICE MODEL of 2SK3662 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of 2SK3662 (Standard+BDS Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Model Parameters) PART NUMBER: 2SK3662 MANUFACTURER: TOSHIBA Body Diode (Model Parameters) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 2. Circuit Configuration All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 3. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 4. Transconductance Characteristic Circuit Simulation Result 60 55 50 45 40 35 gfs 30 25 20 15 10 Measurement 5 Simulation 0 1 3 5 7 9 11 13 15 17 19 ID - Drain Current - A Comparison table gfs Id(A) Error(%) Measurement Simulation 1 14.000 14.286 2.043 2 18.000 18.182 1.011 5 29.000 29.412 1.421 10 39.000 40.000 2.564 20 53.000 54.054 1.989 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 5. Vgs-Id Characteristic Circuit Simulation result 100A 80A 60A 40A 20A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(V3) V_V2 Evaluation circuit V3 0Vdc U26 Vv ariable 2SK3662 10Vdc 10Vdc V2 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 6. Comparison Graph Circuit Simulation Result 19.00 Measurement Simulation 17.00 15.00 13.00 ID - Drain Current - A 11.00 9.00 7.00 5.00 3.00 1.00 1 2 3 4 5 VGS - Gate to Source Voltage - V Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 1 2.600 2.623 0.885 2 2.650 2.686 1.358 5 2.780 2.814 1.223 10 2.900 2.959 2.034 20 3.100 3.166 2.129 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 7. Rds(on) Characteristic Circuit Simulation result 20A 18A 16A 14A 12A 10A 8A 6A 4A 2A 0A 0V 100mV 200mV 300mV 400mV 500mV I(V3) V_VDS Evaluation circuit V3 0Vdc U26 VDS 2SK3662 10Vdc 0Vdc VGS 0 Simulation Result ID=18A, VGS=10V Measurement Simulation Error (%) R DS (on) 9.400 m 9.388 m -0.128 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 8. Gate Charge Characteristic Circuit Simulation result 20V 10V 0V 0 40n 80n 120n 160n V(W1:3) Time*1mS Evaluation circuit V2 0Vdc U26 Dbreak PER = 1000u PW = 600u W1 2SK3662 TF = 10n + D1 TR = 10n I2 - TD = 0 35Adc I2 = 1m W I1 IOFF = 1mA I1 = 0 ION = 0uA V1 48Vdc 0 Simulation Result VDD=48V,ID=35A Measurement Simulation Error (%) ,VGS=10V Qgs(nC) 17.000 17.094 0.553 Qgd(nC) 21.000 21.261 1.243 Qg 91.000 74.606 -18.015 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 9. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.1 900.000 903.452 0.384 0.2 850.000 848.737 -0.149 0.5 700.000 701.000 0.143 1 570.000 570.681 0.119 2 430.000 430.000 0.000 5 280.000 280.000 0.000 10 200.000 199.242 -0.379 20 125.000 126.553 1.242 50 65.000 67.108 3.243 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 10. Switching Time Characteristic Circuit Simulation result 12V 10V 8V 6V 4V 2V 0V 0.921us 1.000us 1.100us 1.200us 1.299us V(L2:1)/3 V(L1:2) Time Evaluation circuit L2 R2 5nH 1.67 R1 L1 U29 2SK3662 30nH V1 = 0 V1 V2 = 20 V2 4.7 30Vdc TD = 1u R3 TR = 1n TF = 1n 4.7 PW = 10u PER = 200u 0 Simulation Result ID=18 A, VDD=30V Measurement Simulation Error(%) VGS=0/10V Ton(ns) 19.000 19.274 1.442 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 11. Output Characteristic Circuit Simulation result 100A 80A 3.8V 60A 3.6.V 40A 3.4V 20A VGS=3V 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(Vdsense) V_Vvariable Evaluation circuit Vdsense 0Vdc U28 2SK3662 Vv ariable 10Vdc 10Vdc Vstep 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 12. BODY DIODE SPICE MODEL Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 0V 0.4V 0.8V 1.2V 1.6V 2.0V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 2SK3662 0Vdc U26 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 13. Comparison Graph Circuit Simulation Result Measurement Simulation 41.00 Drain reverse current IDR(A) 31.00 21.00 11.00 1.00 0 0.2 0.4 0.6 0.8 1 1.2 Source-Drain voltage VSD(V) Simulation Result VSD(V) IDR(A) Measuremen Simulation %Error 1 0.670 0.671 0.149 2 0.700 0.699 -0.143 5 0.750 0.747 -0.400 10 0.800 0.802 0.250 20 0.890 0.891 0.112 50 1.120 1.117 -0.268 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 14. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 5.16us 5.24us 5.32us 5.40us 5.48us 5.56us I(R1) Time Evaluation Circuit R1 50 V1 = -9.4v V1 V2 = 10.7v 2SK3662 TD = 245n TR = 10ns U27 TF = 19ns PW = 5us PER = 100us 0 Compare Measurement vs. Simulation Trr(ns) Measurement Simulation Error (%) Trj+Trb 94.500 94.950 0.476 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 15. Reverse Recovery Characteristic Reference Trj=14.500(ns) Trb=80.000(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 16. ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc R2 2SK3662 100MEG U27 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 17. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006