SPICE MODEL of TPC6004 (Professional+BDP Model) in SPICE PARK

Device Modeling Report

COMPONENTS: Power MOSFET (Professional)
PART NUMBER: TPC6004
MANUFACTURER: TOSHIBA
Body Diode (Professional) / ESD Protection Diode

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
1

Equivalent Circuit

D

S
- -
+ +
R3
S2 10MEG DGD

R1 CGD
10M S1
+ +
- -

S M1
G

S

2

MOSFET MODEL

PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3

Transconductance Characteristic

Circuit Simulation Result

20
Measurement

Simulation

15
gfs

10

5

0
0 0.5 1 1.5 2
ID : Drain Current A

Comparison table

gfs
Id(A) Error(%)
Measurement Simulation
0.010 0.967 0.942 -2.637
0.020 1.583 1.546 -2.331
0.050 2.633 2.547 -3.266
0.100 3.837 3.664 -4.519
0.200 5.380 5.139 -4.480
0.500 8.133 7.936 -2.428
1.000 11.047 10.886 -1.457
2.000 14.953 14.740 -1.424

4

Vgs-Id Characteristic

Circuit Simulation result

12A

10A

8A

6A

4A

2A

0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V3)
V_V2

Evaluation circuit

V3

0V dc

Vvari abl e

10 Vd c U1 TP C60 04
10 Vd c

V2

0

5

Comparison Graph


12
Measurement
Simulation

10

8
ID : Drain Current A

6

4

2

0
0 1 2 3 4 5
VGS : Gate to Source Voltage V

Simulation Result

VGS(V)
ID(A) Error (%)
0.100 1.100 1.137 3.400
0.200 1.120 1.160 3.580
0.500 1.190 1.205 1.294
1.000 1.230 1.259 2.317
2.000 1.300 1.336 2.762
5.000 1.450 1.501 3.531
10.000 1.630 1.703 4.491
12.000 1.700 1.773 4.265

6

Rds(on) Characteristic

5.0A

4.0A

3.0A

2.0A

1.0A

0A
0V 20mV 40mV 60mV 80mV 100mV
I(V3)
V_VDS
Evaluation circuit

V3

U1
0V dc

VDS

4.5 Vdc TP C60 04
0V dc

VG S

0

Simulation Result

ID=3A, VGS=4.5V Measurement Simulation Error (%)
R DS (on) (m) 19.000 19.001 0.005

7

Gate Charge Characteristic
20V

16V

12V

8V

4V

0V
0 8n 16n 24n 32n 40n
V(W1:3)
Time*1mS
Evaluation circuit
V2

U1
0V dc

PE R = 10 00u Db re ak
PW = 6 00u W1
TF = 10n + D1
TR = 1 0n TP C60 04 I2
TD = 0
- 6A dc
I2 = 1m W
I1 = 0 I1 IOFF = 0.1mA
ION = 0u A

V1
16 Vd c

0

Simulation Result

VDD=16V,ID=6A
Measurement Simulation Error (%)
,VGS=5V
Qgs(nc) 2.500 2.496 -0.172
Qgd(nc) 4.000 4.102 2.550
Qg(nc) 17.500 17.504 0.023

8

Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd(pF)
VDS(V) Error(%)
0.1 122.000 122.000 0.000
0.2 110.000 110.200 0.182
0.5 89.000 89.500 0.562
1 71.000 71.000 0.000
2 53.000 53.500 0.943
5 35.000 35.100 0.286
10 25.000 25.250 1.000
20 18.000 17.900 -0.556
30 15.000 14.500 -3.333

9

Switching Time Characteristic


6.0V

5.0V

4.0V

3.0V

2.0V

1.0V

0V
1.92us 1.96us 2.00us 2.04us 2.08us 2.12us
V(2) V(3)/2
Time

Evaluation circuit

3 L2

U1 50 nH

RL
R1 L1 2
3.3

30 nH
4.7
V1 = 0 TP C60 04
V2 = 10 V2 VDD
TD = 2 u R2 10 Vd c
TR = 1 n
TF = 1n 4.7
PW = 2 u
PE R = 10 u

0

Simulation Result

ID=3A, VDD=10V Measurement Simulation Error(%)
VGS=5V
Ton(ns) 10.000 10.000 0.00

10

Output Characteristic


10A
1.8V
1.7V
2V
8A 4V
6,8,10 V
1.6V
6A

1.5V
4A

1.4V
2A
1.3V

VGS=1.2V
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(Vdsense)
V_Vvariable

Evaluation circuit

Vd se nse

U1
0V dc

Vvari abl e
10 Vd c TP C60 04

0V dc

Vstep

0

11

BODY DIODE SPICE MODEL
Forward Current Characteristic


100A

10A

1.0A

100mA
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(R1)
V_V1

Evaluation Circuit

R1

0.0 1m
TP C60 04

V1
0V dc

U1

0

12

Comparison Graph


100.00
Measurement
Simulation
Drain reverse current IDR(A)

10.00

1.00

0.10
0 0.4 0.8 1.2 1.6 2

Source Drain voltage VSD(V)

Simulation Result

IDR(A) VSD(V) VSD(V) %Error
0.100 0.500 0.498 -0.500
0.200 0.530 0.521 -1.623
0.500 0.570 0.561 -1.667
1.000 0.615 0.600 -2.504
2.000 0.670 0.650 -2.940
5.000 0.770 0.745 -3.208
10.000 0.870 0.859 -1.253
20.000 1.030 1.049 1.854

13

Reverse Recovery Characteristic


400mA

200mA

0A

-200mA

-400mA
19.88us 19.96us 20.04us 20.12us 20.20us 20.28us
I(R1)
Time
Evaluation Circuit

R1

50 DTPC6004

V1 = -9.49V V1
V2 = 10.48V
TD = 25n
TR = 10ns
TF = 10ns
PW = 20us U1
PER = 100us

0

Compare Measurement vs. Simulation

Measurement Simulation Error (%)
Trj(ns) 16.000 16.027 0.169
Trb(ns) 23.200 23.478 1.198
Trr(us) 39.200 39.505 0.778

14

Reverse Recovery Characteristic Reference

Trj=16(ns)
Trb=23.2(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50

Example

Relation between trj and trb

15

Zener Voltage Characteristic


10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1

Evaluation Circuit

R1

0.0 1m U1
TP C60 04

V1
0V dc

R2

10 0ME G

0

16

Zener Voltage Characteristic Reference

17

SPICE MODEL of TPC6004 (Professional+BDP Model) in SPICE PARK

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