SPICE MODEL of 2SK2415 (Standard+BDS Model) in SPICE PARK
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SPICE MODEL of 2SK2415 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of 2SK2415 (Standard+BDS Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: MOSFET (Model Parameters) PART NUMBER: 2SK2415 MANUFACTURER: NEC Corporation REMARK: Body Diode (Model Parameters) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 1
- 2. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 2
- 3. Transconductance Characteristics Circuit Simulation Result 20 Measurement 18 Simulation 16 TRANSCONDUCTANCE Gfs(s) 14 12 10 8 6 4 2 0 0 5 10 15 20 DRIAN CURRENT ID (A) Comparison table gfs(s) Id(A) Error(%) Measurement Simulation 1 4.390 4.348 -0.956 2 5.602 5.711 1.943 5 8.787 9.025 2.704 10 12.407 12.654 1.991 20 17.899 17.346 -3.087 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 3
- 4. Vgs-Id Characteristics Circuit Simulation Result 50A 10A 1.0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V 7.0V 8.0V I(V2) V_VGS Evaluation circuit V2 U1 2SK2415 VDD 10Vdc VGS 0Vdc 0 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 4
- 5. Comparison Graph Circuit Simulation Result 100 Measurement Simulation ID -Drain Current - (A) 10 1 0 1 2 3 4 5 6 7 8 VGS- Gate to Source Voltage - (V) Comparison table gfs(s) Id(A) Error(%) Measurement Simulation 1 2.180 2.177 -0.147 2 2.350 2.391 1.745 5 2.730 2.818 3.223 10 3.250 3.303 1.615 20 4.150 3.994 -3.771 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 5
- 6. *Rds(on) Characteristic Circuit Simulation result 4.0A 3.6A 3.2A 2.8A 2.4A 2.0A 1.6A 1.2A 0.8A 0.4A 0A 0V 100mV 200mV 300mV 400mV 500mV I(V2) V_VDS Evaluation circuit V2 U1 2SK2415 VDS 10Vdc VGS 10Vdc 0 0 0 Simulation Result ID=4.0A, VGS=10V Measurement Simulation Error (%) R DS (on) 0.07 0.07 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 6
- 7. Gate Charge Characteristic Circuit Simulation result 14V 12V 10V 8V 6V 4V 2V 0V 0 5n 10n 15n 20n 25n 30n 35n 40n V(W1:3) Time*1mA Evaluation circuit Vsense U2 2SK2415 I1 D1 Dbreak 8.0Adc W1 + - I2 W VD ION = 0A 48Vdc IOFF = 1.1mA 0 Simulation Result VDD=48V,ID=8.0A ,VGS=10V Measurement Simulation Error (%) Qgs ns 2.000 2.000 0.000 Qgd ns 6.500 6.550 0.769 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 7
- 8. Capacitance Characteristic Circuit Simulation result Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 1 430.000 428.422 -0.367 2 340.000 340.880 0.259 5 250.000 251.181 0.472 10 197.000 199.927 1.486 20 160.000 158.600 -0.875 50 120.000 116.986 -2.512 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 8
- 9. Switching Time Characteristic Circuit Simulation result 12V 10V 8V 6V 4V 2V 0V -2V 0.9802us 0.9900us 1.0000us 1.0100us 1.0300us 1.0500us V(3)/3.0 V(L3:2) Time Evaluation circuit Vsense RL 3 7.5 U1 2SK2415 R1 L3 2 VDD 1nH V1 = 0 10 30Vdc V2 = 20 TD = 1u V1 TF = 1n R2 TR = 1n PW = 1u 10 PER = 10m 0 Simulation Result ID=4A, VDD=30V Measurement Simulation Error(%) VGS=0/10V td (on) ns 5.000 4.982 -0.360 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 9
- 10. Output Characteristic Circuit Simulation result 32A VGS= 10 V VGS =6 V 28A 24A VGS= 4 V 20A 16A 12A 8A 4A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V 7.0V 8.0V I(V2) V_VDS Evaluation circuit V2 U1 2SK2415 VDS 10Vdc VGS 0Vdc 0 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 10
- 11. BODY DIODE SPICE MODEL Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 100mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V I(R1) V_V1 Evaluation Circuit R1 0.01m U1 2SK2415 0Vdc V1 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 11
- 12. Comparison Graph Circuit Simulation Result 100 Measurement Simulation Ids- Diode Forward Current - (A) 10 1 0.1 0 1 2 Vsd-Source to Drain Voltage- (V) Simulation Result VDS(V) IDR(A) Measurement Simulation %Error 0.1 0.620 0.6129 -1.145 0.2 0.640 0.6404 0.062 0.5 0.680 0.6820 0.294 1 0.720 0.7223 0.319 2 0.770 0.7770 0.909 5 0.880 0.8890 1.022 10 1.030 1.0274 -0.252 20 1.250 1.2584 0.672 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 12
- 13. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 9.92us 10.00us 10.08us 10.16us 10.24us 10.32us I(R1) Time Evaluation Circuit R1 50 V1 = -9.5V V2 = 10.5 U1 TD = 50n V1 2SK2415 TR = 10n TF = 10n PW = 10u PER = 50us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trr (ns) 105.00 104.00 -0.950 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 13
- 14. Reverse Recovery Characteristic Reference Measurement Trj=35 (ns) Trb=70 (ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 14
- 15. ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(V2) V_VGS Evaluation Circuit U1 2SK2415 V2 ID 0Adc VGS 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 15
- 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2007 16