SPICE MODEL of 2SK3994 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model parameter)
PART NUMBER: 2SK3994
MANUFACTURER: TOSHIBA
Body Diode (Model parameter) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Transconductance Characteristic
Circuit Simulation Result
15
10
gfs
5
Measurement
Simulation
0
0 4 8 12 16 20
ID(A)
Comparison table
gfs
Id(A) Error (%)
Measurement Simulation
1 3.333 3.448 3.450
2 4.878 4.808 -1.435
5 7.143 7.386 3.402
10 10.000 10.132 1.320
20 13.333 13.727 2.955
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Vgs-Id Characteristic
Circuit Simulation result
50A
40A
30A
20A
10A
0A
0V 4V 8V 12V 16V 20V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1
V2
2SK3994
V1 10
10
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Comparison Graph
Circuit Simulation Result
20
Measurement
Simulation
16
ID - Drain Current (A)
12
8
4
0
0 2 4 6 8 10
VGS - Gate to Source Voltage - V
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
1 5.9 5.9176 0.298
2 6.2 6.1651 -0.563
5 6.7 6.6667 -0.497
10 7.2 7.2491 0.682
20 8 8.1034 1.293
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. Rds(on) Characteristic
Circuit Simulation result
10A
8A
6A
4A
2A
0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(V2)
V_V3
Evaluation circuit
V2
0Vdc
U1
V3
2SK3994 0Vdc
V1
10
0
Simulation Result
ID=10A, VGS=10V Measurement Simulation Error (%)
R DS (on) 90 m 90.2 m 0.222
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Gate Charge Characteristic
Circuit Simulation result
16V
12V
8V
4V
0V
0 20n 40n 60n 80n 100n
V(W1:3)
Time*1mA
Evaluation circuit
RON = 1.0
ROFF = 1e6 U1
ION = 0
IOFF = 100u
W1
+ I2
2SK3994 D1
-
Dbreak
W 20
I1
I1 = 0
I2 = 1m V1
TD = 0
TR = 10n 200
TF = 10n
PW = 300u
PER = 500u
0
Simulation Result
VDD=200V,ID=20A Measurement Simulation Error (%)
Qgs 11 nC 11.013 nC 0.118
Qgd 20 nC 20.195 nC 0.975
Qg 40 nC 34.777 nC -13.058
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 2550 2500 -1.961
0.2 2450 2449 -0.041
0.5 2200 2210 0.455
1 1900 1915 0.789
2 1550 1530 -1.290
5 1000 1005 0.500
10 680 670 -1.471
20 420 430 2.381
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. Switching Time Characteristic
Circuit Simulation result
20V
10V
0V
1.8us 2.0us 2.2us 2.3us
V(U1:G) V(U1:D)/12.5
Time
Evaluation circuit
L1 R2
50nH
U1 12.5
L2
V1
30nH
125
V1 = 0 V2 R4 2SK3994
V2 = 10
TD = 2u 4.7
TR = 6n
TF = 7n
PW = 10u
PER = 30u
0
Simulation Result
ID=10 A, VDD=125V
Measurement Simulation Error(%)
VGS=0/10V
ton 40.000 ns 40.324 ns 0.81
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Output Characteristic
Circuit Simulation result
100A
80A 11
6.8
60A 10
40A 9
8
20A
VGS=7 V
0A
0V 4V 8V 12V 16V 20V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U1
2SK3994
Vv ariable
Vstep
20
7
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. BODY DIODE
Forward Current Characteristic
Circuit Simulation Result
1.0KA
100A
10A
1.0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
2SK3994
V1
0Vdc
U1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
1000
Measurement
Simulation
Drain reverse current IDR(mA)
100
10
1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Source-Drain voltage VSD(V)
Simulation Result
VSD(V)
Ifwd(A) Measurement Simulation %Error
1 0.675 0.676 0.148
2 0.71 0.708 -0.282
5 0.76 0.759 -0.132
10 0.81 0.812 0.247
20 0.89 0.8896 -0.045
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
14.0us 14.4us 15.2us 16.0us 16.8us 17.6us
I(RL)
Time
Evaluation Circuit
RL
50
2SK3994
V1 = -9.4 V1
V2 = 10.6
TD = 0
TR = 10n
TF = 10n
PW = 15u U1
PER = 100u
0
Compare Measurement vs. Simulation
Trr(ns) Measurement Simulation Error (%)
Trj+Trb (ns) 904 904.076 0.008
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Reverse Recovery Characteristic Reference
Trj=480(ns)
Trb=424(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result
10mA
5mA
0A
0V 50V 100V
I(R1)
V_V1
Evaluation Circuit
U1
R1
0.01m
2SK3994 R2
V1
0Vdc 1G
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006