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Device Modeling Report



COMPONENTS: Power MOSFET (Model Parameters)
PART NUMBER: TPCA8003-H
MANUFACTURER: TOSHIBA
Body Diode (Model Parameters) / ESD Protection Diode




                   Bee Technologies Inc.


     All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
MOSFET MODEL

PSpice model
                                       Model description
 parameter
  LEVEL
      L        Channel Length
     W         Channel Width
     KP        Transconductance
     RS        Source Ohmic Resistance
     RD        Ohmic Drain Resistance
    VTO        Zero-bias Threshold Voltage
    RDS        Drain-Source Shunt Resistance
    TOX        Gate Oxide Thickness
   CGSO        Zero-bias Gate-Source Capacitance
   CGDO        Zero-bias Gate-Drain Capacitance
    CBD        Zero-bias Bulk-Drain Junction Capacitance
     MJ        Bulk Junction Grading Coefficient
     PB        Bulk Junction Potential
     FC        Bulk Junction Forward-bias Capacitance Coefficient
    RG         Gate Ohmic Resistance
     IS        Bulk Junction Saturation Current
      N        Bulk Junction Emission Coefficient
     RB        Bulk Series Resistance
    PHI        Surface Inversion Potential
  GAMMA        Body-effect Parameter
  DELTA        Width effect on Threshold Voltage
    ETA        Static Feedback on Threshold Voltage
  THETA        Mobility Modulation
  KAPPA        Saturation Field Factor
   VMAX        Maximum Drift Velocity of Carriers
     XJ        Metallurgical Junction Depth
    UO         Surface Mobility




          All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Transconductance Characteristic

Circuit Simulation Result

      100

      90

      80

      70

      60
gfs




      50

      40

      30

      20

      10                                                             Measurement
                                                                     Simulation
       0
            0.1            10.1        20.1           30.1       40.1
                                              ID(A)
Comparison table


                                                gfs
                  Id(A)                                                     Error(%)
                                  Measurement           Simulation
                      0.1                 3.300                 3.333             1.000
                      0.2                 5.000                 5.000             0.000
                      0.5                8.3.00                 8.333             0.398
                          1              12.500                12.500             0.000
                          2              16.500                16.667             1.012
                          5              25.000                25.000             0.000
                          10             35.500                35.714             0.603
                          20             50.000                50.000             0.000



                    All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Vgs-Id Characteristic

Circuit Simulation result

  100A




    80A




    60A




    40A




    20A




     0A
          0V           1.0V        2.0V       3.0V       4.0V       5.0V      6.0V
               I(V3)
                                              V_V2



Evaluation circuit


                                U21




                                                            V3

                                                           0Vdc


                                TPCA8003-H                 V1
                              V2
                              0Vdc                         10Vdc




                  0




                       All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Comparison Graph

    Circuit Simulation Result

                                    Measurement
                                    Simulation



                         31
ID - Drain Current - A




                         21




                         11




                         1
                              0           1          2          3            4          5           6
                                                VGS - Gate to Source Voltage - V



    Simulation Result


                                                                    VGS(V)
                                  ID(A)                                                                 Error (%)
                                                  Measurement                    Simulation

                                           1                    2.000                       2.057            2.850
                                          10                    2.400                       2.447            1.958
                                          20                    2.600                       2.684            3.231
                                          30                    2.800                       2.871            2.536
                                          40                    3.000                       3.030            1.000




                                          All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Rds(on) Characteristic

Circuit Simulation result

   20A




   16A




   12A




    8A




    4A




    0A
         0V                 50mV            100mV               150mV         200mV
              I(V3)
                                            V_VDS



Evaluation circuit

                               U21




                                                           V3

                                                          0Vdc
                            VGS
                              TPCA8003-H                  VDS

                             10Vdc                        0Vdc




                 0



Simulation Result

         ID=18A, VGS=10V              Measurement                Simulation           Error (%)
                R DS (on)                   5.100                  5.075               -0.490



                      All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Gate Charge Characteristic
Circuit Simulation result
    20V




    16V




    12V




     8V




     4V




     0V
          0                   8n                   16n               24n                   32n        40n
              V(W1:3)
                                                          Time*1mS

Evaluation circuit

                                                   U21               V2


                                                                 0Vdc
                                                                          Dbreak


                                                                             D1
                PER = 1000u
                PW = 600u           W1                                             I2
                TF = 10n              +            TPCA8003-H                      35Adc
                TR = 10n
                TD = 0
                                      -
                I2 = 1m             W
                              I1    IOFF = 100uA                                   V1
                I1 = 0              ION = 0uA                                      24Vdc




                                             0



Simulation Result

              VDD=240V,ID=35A
                                           Measurement                    Simulation             Error (%)
                 ,VGS=10V
                  Qgs(nC)                                   5.800                   5.789           -0.190
                  Qgd(nC)                                   5.100                   5.087           -0.255
                    Qg                                     25.000                  24.262           -2.952



                         All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Capacitance Characteristic



                                                      Measurement
                                                      Simulation




Simulation Result


                                    Cbd(pF)
           VDS(V)                                              Error(%)
                          Measurement        Simulation
                    0.1            1400          1430.000           2.143
                    0.2            1370          1350.000          -1.460
                    0.5            1200          1208.000           0.667
                      1            1050          1045.000          -0.476
                      2             820           830.000           1.220
                      5             600           603.000           0.500
                     10             430           438.000           1.860
                     20             330           324.000          -1.818




              All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Switching Time Characteristic

Circuit Simulation result

   14V



   12V



   10V



    8V



    6V



    4V



    2V



    0V


          1.000us           1.020us            1.040us       1.060us          1.080us
         V(L1:2)         V(L2:1)/1.5
                                                  Time
Evaluation circuit


                                                                       L2         RL

                                                                       50nH       0.83


                             R1         L1

            V1 = 0
                                        30nH
            V2 = 20       V2 4.7                                                    V1
            TD = 1u                    R2            TPCA8003-H                  15Vdc
            TR = 10n
            TF = 10n                   4.7
            PW = 10u
            PER = 200u



           0



Simulation Result

         ID=18 A, VDD=15V
                                       Measurement                Simulation             Error(%)
            VGS=0/10V
              Ton(ns)                              11.000               10.965               -0.318



                 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Output Characteristic

Circuit Simulation result

  100A

          10             6

   80A
                             8


                                                                            3.6
   60A

                                                                            3.4


   40A
                                                                            3.2


                                                                            3
   20A
                                                                           2.8

                                                                     VGS=2.6V
    0A
         0V           1.0V             2.0V        3.0V          4.0V             5.0V
              I(Vdsense)
                                         V_Vvariable




Evaluation circuit


                                 U21




                                                                Vdsense


                       10Vdc                                  0Vdc

                                 TPCA8003-H                   Vv ariable

                       Vstep
                                                              5Vdc




                  0




                      All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
BODY DIODE
Forward Current Characteristic

Circuit Simulation Result

   1.0KA




    100A




     10A




    1.0A




   100mA
           0V                           400mV                       800mV   1000mV
                I(R1)
                                                V_V1
Evaluation Circuit




                            R1
                            0.01m

                         V1
                0Vdc                                   TPCA8003-H
                                                       U21




                        0




                       All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Comparison Graph

Circuit Simulation Result

                      1000
                                           Measurement
                                           Simulation



                               100
Drain reverse current IDR(A)




                               10




                                1




                               0.1
                                     0         0.2            0.4         0.6           0.8           1

                                                        Source-Drain voltage VSD(V)


Simulation Result


                                                                   VSD(V)
                                         IDR(A)          Measuremen       Simulation                %Error
                                              0.1                0.600            0.601               0.167
                                              0.2                0.620            0.621               0.161
                                              0.5                0.650            0.648              -0.308
                                                1                0.670            0.668              -0.299
                                                2                0.695            0.691              -0.576
                                                5                0.720            0.724               0.556
                                               10                0.750            0.755               0.667
                                               20                0.800            0.795              -0.625
                                               50                0.870            0.871               0.115



                                            All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Reverse Recovery Characteristic

Circuit Simulation Result

  400mA



  300mA



  200mA



  100mA



   -0mA



 -100mA



 -200mA



 -300mA



 -400mA
     0.92us             1.00us      1.08us           1.16us         1.24us      1.32us
          I(R1)
                                              Time
Evaluation Circuit

                                    R1


                                         50



          V1 = -9.4v    V1
          V2 = 10.6v
          TD = 1n
          TR = 10ns                                    TPCA8003-H
          TF = 7ns
          PW = 1us                                    U21
          PER = 100us




                         0



Compare Measurement vs. Simulation

             Trr(ns)             Measurement          Simulation             Error (%)
           Trj+Trb(ns)                 106.000           105.595                  -0.382




                  All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Reverse Recovery Characteristic                                        Reference




Trj=16(ns)
Trb=90(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50




                                                     Example




                               Relation between trj and trb




              All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result

   10mA


    9mA


    8mA


    7mA


    6mA


    5mA


    4mA


    3mA


    2mA


    1mA


     0A
          0V       5V        10V        15V      20V   25V         30V   35V   40V   45V   50V
               I(R1)
                                                       V_V1


Evaluation Circuit

                              U21




                                    TPCA8003-H
                              R1
                                                              R2
                              0.01m
                                                              100MEG
                             V1
                      0Vdc




                  0




                        All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Zener Voltage Characteristic                                         Reference




            All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

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SPICE MODEL of TPCA8003-H (Standard+BDS Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: Power MOSFET (Model Parameters) PART NUMBER: TPCA8003-H MANUFACTURER: TOSHIBA Body Diode (Model Parameters) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 2. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 3. Transconductance Characteristic Circuit Simulation Result 100 90 80 70 60 gfs 50 40 30 20 10 Measurement Simulation 0 0.1 10.1 20.1 30.1 40.1 ID(A) Comparison table gfs Id(A) Error(%) Measurement Simulation 0.1 3.300 3.333 1.000 0.2 5.000 5.000 0.000 0.5 8.3.00 8.333 0.398 1 12.500 12.500 0.000 2 16.500 16.667 1.012 5 25.000 25.000 0.000 10 35.500 35.714 0.603 20 50.000 50.000 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 4. Vgs-Id Characteristic Circuit Simulation result 100A 80A 60A 40A 20A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V I(V3) V_V2 Evaluation circuit U21 V3 0Vdc TPCA8003-H V1 V2 0Vdc 10Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 5. Comparison Graph Circuit Simulation Result Measurement Simulation 31 ID - Drain Current - A 21 11 1 0 1 2 3 4 5 6 VGS - Gate to Source Voltage - V Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 1 2.000 2.057 2.850 10 2.400 2.447 1.958 20 2.600 2.684 3.231 30 2.800 2.871 2.536 40 3.000 3.030 1.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 6. Rds(on) Characteristic Circuit Simulation result 20A 16A 12A 8A 4A 0A 0V 50mV 100mV 150mV 200mV I(V3) V_VDS Evaluation circuit U21 V3 0Vdc VGS TPCA8003-H VDS 10Vdc 0Vdc 0 Simulation Result ID=18A, VGS=10V Measurement Simulation Error (%) R DS (on) 5.100  5.075  -0.490 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 7. Gate Charge Characteristic Circuit Simulation result 20V 16V 12V 8V 4V 0V 0 8n 16n 24n 32n 40n V(W1:3) Time*1mS Evaluation circuit U21 V2 0Vdc Dbreak D1 PER = 1000u PW = 600u W1 I2 TF = 10n + TPCA8003-H 35Adc TR = 10n TD = 0 - I2 = 1m W I1 IOFF = 100uA V1 I1 = 0 ION = 0uA 24Vdc 0 Simulation Result VDD=240V,ID=35A Measurement Simulation Error (%) ,VGS=10V Qgs(nC) 5.800 5.789 -0.190 Qgd(nC) 5.100 5.087 -0.255 Qg 25.000 24.262 -2.952 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.1 1400 1430.000 2.143 0.2 1370 1350.000 -1.460 0.5 1200 1208.000 0.667 1 1050 1045.000 -0.476 2 820 830.000 1.220 5 600 603.000 0.500 10 430 438.000 1.860 20 330 324.000 -1.818 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 9. Switching Time Characteristic Circuit Simulation result 14V 12V 10V 8V 6V 4V 2V 0V 1.000us 1.020us 1.040us 1.060us 1.080us V(L1:2) V(L2:1)/1.5 Time Evaluation circuit L2 RL 50nH 0.83 R1 L1 V1 = 0 30nH V2 = 20 V2 4.7 V1 TD = 1u R2 TPCA8003-H 15Vdc TR = 10n TF = 10n 4.7 PW = 10u PER = 200u 0 Simulation Result ID=18 A, VDD=15V Measurement Simulation Error(%) VGS=0/10V Ton(ns) 11.000 10.965 -0.318 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 10. Output Characteristic Circuit Simulation result 100A 10 6 80A 8 3.6 60A 3.4 40A 3.2 3 20A 2.8 VGS=2.6V 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(Vdsense) V_Vvariable Evaluation circuit U21 Vdsense 10Vdc 0Vdc TPCA8003-H Vv ariable Vstep 5Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 11. BODY DIODE Forward Current Characteristic Circuit Simulation Result 1.0KA 100A 10A 1.0A 100mA 0V 400mV 800mV 1000mV I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc TPCA8003-H U21 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 12. Comparison Graph Circuit Simulation Result 1000 Measurement Simulation 100 Drain reverse current IDR(A) 10 1 0.1 0 0.2 0.4 0.6 0.8 1 Source-Drain voltage VSD(V) Simulation Result VSD(V) IDR(A) Measuremen Simulation %Error 0.1 0.600 0.601 0.167 0.2 0.620 0.621 0.161 0.5 0.650 0.648 -0.308 1 0.670 0.668 -0.299 2 0.695 0.691 -0.576 5 0.720 0.724 0.556 10 0.750 0.755 0.667 20 0.800 0.795 -0.625 50 0.870 0.871 0.115 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 13. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 0.92us 1.00us 1.08us 1.16us 1.24us 1.32us I(R1) Time Evaluation Circuit R1 50 V1 = -9.4v V1 V2 = 10.6v TD = 1n TR = 10ns TPCA8003-H TF = 7ns PW = 1us U21 PER = 100us 0 Compare Measurement vs. Simulation Trr(ns) Measurement Simulation Error (%) Trj+Trb(ns) 106.000 105.595 -0.382 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 14. Reverse Recovery Characteristic Reference Trj=16(ns) Trb=90(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 15. ESD PROTECTION DIODE Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit U21 TPCA8003-H R1 R2 0.01m 100MEG V1 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006