SPICE MODEL of 2SK3569 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: 2SK3569
MANUFACTURER: TOSHIBA
Body Diode (Model Parameters) / ESD Protection Diode
Bee Technologies Inc.
.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

2. Circuit Configuration
2
1
2SK3569
3
MOSFET MODEL PARAMETERS
PSpice
model Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

3. Transconductance Characteristic
Circuit Simulation Result
14
Measurement
Simulation
12
TRANSCONDUCTANCE Gfs(s)
10
8
6
4
2
0
0 2 4 6 8 10 12
DRIAN CURRENT ID (A)
Comparison table
Gfs(S)
Id(A) Error(%)
Measurement Simulation
1 3.703 3.774 1.91
2 5.195 5.249 1.05
5 8.330 8.065 -3.19
10 11.500 11.038 -4.02
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

4. Vgs-Id Characteristic
Circuit Simulation result
20A
16A
12A
8A
4A
0A
0V 2V 4V 6V 8V 10V
I(Vsense)
V_VGS
Evaluation circuit
Vsense
2SK3569 VDS
20Vdc
VGS
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

5. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
9
8
7
DRAIN CURRENT ID (A)
6
5
4
3
2
1
0
0 1 2 3 4 5 6 7
GATE-SOURCE VOLTAGE VGS (V)
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.5 3.6700 3.8046 3.67
1 3.8900 3.9626 1.87
2 4.1850 4.1889 0.09
5 4.6300 4.6481 0.39
10 5.1250 5.1818 1.11
20 5.7400 5.9658 3.93
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

6. Rds(on) Characteristic
Circuit Simulation result
5.0A
4.0A
2.0A
0A
0V 5V 10V
I(Vsense)
V_VDS
Evaluation circuit
Vsense
2SK3569 VDS
20Vdc
VGS
10Vdc
0
Simulation Result
ID=10A, VGS=10V Measurement Simulation Error (%)
R DS (on) 0.54  0.54  0.00
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

7. Gate Charge Characteristic
Circuit Simulation result
20V
16V
12V
8V
4V
0V
0 10n 20n 30n 40n 50n 60n
V(W1:3)
Time*1mA
Evaluation circuit
Vsense
I1
D1
Dbreak 10Adc
2SK3569
W1
+
-
I2
TD = 0 W VD
ION = 0A 200Vdc
IOFF = 1mA
0
Simulation Result
VDD=200V,
Measurement Simulation Error (%)
ID=10A
Qgs 8.00 nC 8.00 nC 0.00
Qgd 17.00 nC 17.00 nC 0.00
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 2050 2025 -1.2195
0.2 1950 1935 -0.7692
0.5 1700 1720 1.1765
1 1480 1450 -2.0270
2 1100 1102 0.1818
5 620 633 2.0968
10 370 372 0.5405
20 195 200 2.5641
50 85 84 -1.1765
100 44 42 -4.5455
0.1 2050 2025 -1.2195
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

9. Switching Time Characteristic
Circuit Simulation result
12V
11V
10V
9V
8V
7V
6V
5V
4V
3V
2V
1V
0V
0.24us 0.40us 0.60us 0.80us 1.00us 1.20us 1.40us 1.60us 1.80us 2.04us
V(L3:2) V(3)/20
Time
Evaluation circuit
Vsense RL
3
40
V1 = 0
V2 = 20 R1 L3 2
TD = 1u
50 30nH
2SK3569 VD
TR = 10n V1 200Vdc
R2
TF = 10n
50
PW = 10u
PER = 10m
0
Simulation Result
ID=5A,
VDD= 200V, Measurement Simulation Error(%)
VGS=0/10V
Td(on) 50.000 ns 88.442 ns 76.88
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

10. Output Characteristic
Circuit Simulation result
10A
6 5.3V
V
10,8
5.1V
8A
5.0V
4.8V
6A
4.6V
4A
4.4 V
4.2V
2A
VGS= 4V
0A
0V 2V 4V 6V 8V 10V
I(Vsense)
V_VDS
Evaluation circuit
Vsense
2SK3569 VDS
20Vdc
VGS
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 2SK3569
0Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
100
Measurement
Simulation
DRAIN REVERSE CURRENT IDR (A)
10
1
0.1
0.000 0.200 0.400 0.600 0.800 1.000 1.200
SOURCE-DRAIN VOLTAGE VSD (V)
Simulation Result
VSD(V)
IDR(A) %Error
Measurement Simulation
0.1 0.630 0.627 -0.54
0.2 0.648 0.650 0.34
0.5 0.683 0.683 0.00
1 0.709 0.711 0.32
2 0.748 0.746 -0.27
5 0.817 0.813 -0.54
10 0.895 0.899 0.45
20 1.052 1.051 -0.11
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

13. Reverse Recovery Characteristic (Body Diode)
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
4us 6us 8us 10us 12us 14us 16us 18us 20us 22us
I(R1)
Time
Evaluation Circuit
R1 50
V1 = -9.3V
V2 = 10.8V
TD = 5.78n
2SK3569
TR = 10ns V1
TF = 5.7ns
PW = 10us
PER = 1000us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 1.32 us 1.314 us -0.45
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

14. Reverse Recovery Characteristic (Body Diode) Reference
Trj= (1.32us)
Trb= (1.4us)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

15. Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 10V 20V 30V 40V 50V 60V 70V 80V 90V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m 2SK3569 IOPEN
0Adc
V1
0Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006