SPICE MODEL of 2SK2782 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: 2SK2782
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Professional Model) /
ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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3. Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs
Id(A) Error (%)
Measurement Simulation
1 4.500 4.717 4.82
2 6.300 6.579 4.43
5 10.200 10.000 -1.96
10 14.000 13.569 -3.08
20 19.000 18.182 -4.31
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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4. Vgs-Id Characteristic
Circuit Simulation result
50A
40A
30A
20A
10A
0A
0V 2V 4V 6V 8V 10V
I(V3)
V_VGS
Evaluation circuit
Vsense
U1 VD
2SK2782 10Vdc
VGS
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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5. Comparison Graph
Circuit Simulation Result
20
Measurement
Simulation
ID, Drain-to-Source Current (Α)
10
0
1 2 3 4 5
VGS, Gate-to-Source Voltage (V)
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
1 2.180 2.267 3.99
2 2.400 2.448 2.00
5 2.810 2.817 0.24
10 3.250 3.249 -0.04
20 3.900 3.889 -0.28
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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6. Rds(on) Characteristic
Circuit Simulation result
10A
9A
8A
7A
6A
5A
4A
3A
2A
1A
0A
0V 50mV 100mV 150mV 200mV 250mV 300mV 350mV
I(Vsense)
V_VDS
Evaluation circuit
Vsense
U1 VDS
2SK2782 10Vdc
VGS
10Vdc
0
Simulation Result
ID = 10A, VGS = 10V Measurement Simulation Error (%)
R DS (on)  0.039 0.039 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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7. Gate Charge Characteristic
Circuit Simulation result
25V
20V
15V
10V
5V
0V
0 10n 20n 30n 40n 50n
V(W1:3)
Time*1mA
Evaluation circuit
Vse nse
I1
D1
U1 Db rea k 2 0A dc
W1 2 SK2 7 82
+
I2
-
TD = 0 W
ION = 0A VD
IOFF = 1 mA 4 8V dc
0
Simulation Result
VDD=48V, ID=20A,
Measurement Simulation Error (%)
VGS=10V
Qgs nC 4.00 3.97 -0.80
Qgd nC 7.00 6.97 -0.43
Qg nC 25.00 24.94 -0.24
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd (pF)
VDS (V) Error (%)
Measurement Simulation
0.10 670 695 -3.60
0.20 640 660 -3.03
0.50 570 585 -2.56
1.00 500 510 -1.96
2.00 410 409 0.24
5.00 290 300 -3.33
10.00 220 231 -4.76
20.00 172 175 -1.71
50.00 119 115 3.48
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
8

9. Switching Time Characteristic
Circuit Simulation result
14V
12V
10V
8V
6V
4V
2V
0V
-2V
4.90us 4.95us 5.00us 5.05us 5.10us 5.15us
V(2) V(3)/3
Time
Evaluation circuit
Vsense RL
3
50nH 3
R1 L3
2
U1 VDD
V1 = 0 4.7 30nH 2SK2782 30Vdc
V2 = 20 V1
TD = 5u R2
TR = 10n 4.7
TF = 10n
PW = 10u
PER = 10m
0
Simulation Result
ID=10A, VDD=30V
Measurement Simulation Error(%)
VGS=0/10V
ton ns 25.00 24.95 -0.20
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
9

10. Output Characteristic
Circuit Simulation result
20A
10 8 6
4
16A
3.5
12A
8A
3
4A
VGS=2.5V
0A
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(Vsense)
V_VD
Evaluation circuit
Vsense
U1 VD
2SK2782 10Vdc
VGS
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
10

11. Forward Current Characteristic
Circuit Simulation Result
50A
10A
1.0A
100mA
0V 0.4V 0.8V 1.2V 1.6V 2.0V 2.4V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
U1
V1 D2SK2782_PRO
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
11

12. Comparison Graph
Circuit Simulation Result
Measurement
Simulation
Drain Reverse Current IDR (A)
10
1
0.1
0 0.4 0.8 1.2 1.6 2 2.4
Drain-Source Voltage VDS (V)
Simulation Result
VSD(V)
IDR(A) %Error
Measurement Simulation
0.1 0.6200 0.6207 0.11
0.2 0.6430 0.6437 0.11
0.5 0.6800 0.6770 -0.44
1 0.7040 0.7050 0.14
2 0.7400 0.7384 -0.22
5 0.8000 0.8002 0.02
10 0.8700 0.8746 0.53
20 1.0000 0.9962 -0.38
50 1.3000 1.2974 -0.20
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
12

13. Reverse Recovery Characteristics
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
19.6us 19.8us 20.0us 20.2us 20.4us 20.6us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.4V V1 U1
V2 = 10.8V D2SK2782_PRO
TD = 18ns
TR = 7.5ns
TF = 10ns
PW = 20us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj ns 20.30 20.25 -0.25
trb ns 55.00 54.79 -0.38
trr ns 75.30 75.04 -0.35
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
13

14. Reverse Recovery Characteristic Reference
Measurement
Trj=20.30(ns)
Trb=55.00(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
14

15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
R1
U1 2SK2782
0.01m
V1
0Vdc
R2
100MEG
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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