SPICE MODEL of TPCA8019-H (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: TPCA8019-H
MANUFACTURER: TOSHIBA
Body Diode (Special Model)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. Circuit Configuration
Equivalent Circuit
D
S1
- -
+ +
R2
S
R1 10MEG DGD
10M CGD
S2
+ +
- -
Q1
S
G
S
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. Transconductance Characteristic
Circuit Simulation Result
200
Measurement
180 Simulation
160
140
120
gfs
100
80
60
40
20
0
0 4 8 12 16
ID : Drain Current A
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
0.100 1.000 0.998 -0.200
0.200 4.000 3.984 -0.400
0.500 10.000 9.940 -0.600
1.000 19.250 18.868 -1.984
2.000 37.500 38.462 2.565
5.000 62.500 64.643 3.429
10.000 90.500 92.500 2.210
20.000 120.000 125.000 4.167
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Vgs-Id Characteristic
Circuit Simulation result
90A
72A
54A
36A
18A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1
TPCA8019-H
Vv ariable
10Vdc 10Vdc
V2
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. Comparison Graph
Circuit Simulation Result
Measurement
Simulation
36
ID : Drain Current A
18
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
VGS : Gate to Source Voltage V
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.100 2.630 2.620 -0.380
0.200 2.640 2.630 -0.379
0.500 2.660 2.650 -0.376
1.000 2.700 2.680 -0.741
2.000 2.750 2.713 -1.345
5.000 2.850 2.790 -2.105
10.000 2.950 2.900 -1.695
20.000 3.100 3.000 -3.226
50.000 3.350 3.300 -1.493
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Rds(on) Characteristic
Circuit Simulation result
30A
25A
20A
15A
10A
5A
0A
0V 20mV 40mV 60mV 80mV 100mV
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
U1
TPCA8019-H
VDS
10Vdc 0Vdc
VGS
0
Simulation Result
ID=23A, VGS=10V Measurement Simulation Error (%)
R DS (on) () 0.0023 0.00296 0.174
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Gate Charge Characteristic
Circuit Simulation result
20V
16V
12V
8V
4V
0V
0 20n 40n 60n 80n
V(W1:3)
Time*1mS
Evaluation circuit
V2
0Vdc
U1
TPCA8019-H
Dbreak
PER = 1000u D1
PW = 600u W1 I2
TF = 10n + 45Adc
TR = 10n
-
TD = 0
I2 = 1m W
I1 = 0 I1 IOFF = 0.1mA
ION = 0uA V1
24Vdc
0
Simulation Result
VDD=24V,ID=45A
Measurement Simulation Error (%)
,VGS=10V
Qgs(nc) 16.000 16.087 0.544
Qgd(nc) 9.000 9.130 1.444
Qg(nc) 66.000 66.939 1.423
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.100 2300.000 2290.000 -0.430
0.200 2200.000 2220.000 0.910
0.500 2000.000 2010.000 0.500
1.000 1760.000 1760.000 0.000
2.000 1450.000 1440.000 -0.690
5.000 1000.000 1000.000 0.000
10.000 700.000 710.000 1.430
20.000 480.000 480.000 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Switching Time Characteristic
Circuit Simulation result
16V
14V
12V
10V
8V
6V
4V
2V
0V
1.88us 1.96us 2.04us 2.12us 2.20us 2.28us
V(2) V(3)/1.5
Time
Evaluation circuit
3 L2
50n
U1
TPCA8019-H RL
0.65
R1 L1 2
V1 = 0 4.7 30nH VDD
V2 = 20 V2 15Vdc
TD = 2u R2
TR = 6n
TF = 7n 4.7
PW = 2u
PER = 10u
0
Simulation Result
ID=23A, VDD=15V
Measurement Simulation Error(%)
VGS=10V
Ton(ns) 18.000 18.113 0.628
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. Output Characteristic
Circuit Simulation result
50A 8 6 5 4.5 4
10 3.4
3.3
40A
3.2
30A
3.1
20A
3
10A
VGS= 2.8 V
0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U1
TPCA8019-H
Vv ariable
0Vdc
10Vdc
Vstep
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc TPCA8019-H
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. Comparison Graph
Circuit Simulation Result
100.000
Measurement
Simulation
Drain reverse current IDR(A)
10.000
1.000
0 0.5 1 1.5
Source: Drain voltage VSD(V)
Simulation Result
VSD(V) VSD(V)
IDR(A) %Error
Measurement Simulation
1.000 0.660 0.661 0.152
2.000 0.680 0.676 -0.588
5.000 0.700 0.702 0.286
10.000 0.725 0.726 0.138
20.000 0.76 0.758 -0.263
50.000 0.815 0.815 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Reverse Recovery Characteristics (Body Diode)
Circuit Simulation Result
2.0A
1.5A
1.0A
0.5A
0A
-0.5A
-1.0A
-1.5A
-2.0A
1.40us 1.44us 1.48us 1.52us 1.56us 1.60us 1.64us 1.68us 1.72us 1.76us
I(R1)
Time
Evaluation Circuit
R1 2 Vsense
V1 = -30V PARAMETERS:
TF = 0.975u
V2 = 30V
TD = 18.745n DTPCA8019-H_SP
U1
TR = 10ns
TF = {TF} V1
VPULSE
PW = 1us
PER = 20us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trr 92.80 ns 92.30 ns -0.54
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

15. Reverse Recovery Characteristic (Body Diode) Reference
Trr=92.80ns
Conditions:Ifwd=di/dt=30A/us
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007