This document summarizes the modeling and simulation of a power MOSFET transistor and its internal body diode and ESD protection diode. It includes: 1) Details of the device components, manufacturer, and model parameters. 2) Simulation results and comparisons to measurement data for key transistor characteristics like transconductance, capacitance, switching times, and more. 3) Simulation of the body diode's forward and reverse recovery behavior. 4) Simulation of the zener voltage characteristic of the ESD protection diode.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: 2SK3940
MANUFACTURER: TOSHIBA
Body Diode (Professional) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Transconductance Characteristic
Circuit Simulation Result
80
60
gfs
40
20
Measurement
Simulation
0
0 4 8 12 16 20
ID(A)
Comparison table
gfs
Id(A) Error (%)
Measurement Simulation
1 13.699 14.286 4.285
2 19.048 19.802 3.958
5 30.303 31.056 2.485
10 41.667 43.290 3.895
20 58.824 60.241 2.409
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Vgs-Id Characteristic
Circuit Simulation result
160A
120A
80A
40A
0A
0V 2V 4V 6V 8V 10V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1
V2
2SK3940
V1 10
6.5
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Comparison Graph
Circuit Simulation Result
Measurement
Simulation
17
13
ID - Drain Current (A)
9
5
1
0 2 4 6 8 10
VGS - Gate to Source Voltage - V
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
1 4.95 5.0274 1.564
2 5.05 5.0876 0.745
5 5.25 5.2083 -0.794
10 5.45 5.3460 -1.908
20 5.65 5.5437 -1.881
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. Rds(on) Characteristic
Circuit Simulation result
35A
30A
20A
10A
0A
0V 100mV 200mV 300mV
I(V2)
V_V3
Evaluation circuit
V2
0Vdc
U1
V3
2SK3940 0Vdc
V1
10
0
Simulation Result
ID=35A, VGS=10V Measurement Simulation Error (%)
R DS (on) 5.6 m 5.379 m -3.946
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Gate Charge Characteristic
Circuit Simulation result
12V
10V
8V
6V
4V
2V
0V
0 100n 200n 300n
V(W1:3)
Time*1mA
Evaluation circuit
RON = 1.0
ROFF = 1e6 U1
ION = 0
IOFF = 100u
W1
+ I2
2SK3940 D1
-
Dbreak
W 70
I1
I1 = 0
I2 = 1m V1
TD = 0
TR = 10n 60
TF = 10n
PW = 300u
PER = 500u
0
Simulation Result
VDD=60V,ID=70A Measurement Simulation Error (%)
Qgs 70 nC 69.964 nC -0.051
Qgd 65 nC 65.072 nC 0.111
Qg 205 nC 205.582 nC 0.284
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 1600 1590 -0.625
0.2 1500 1505 0.333
0.5 1300 1305 0.385
1 1100 1140 3.636
2 900 870 -3.333
5 600 610 1.667
10 450 445 -1.111
20 320 323 0.938
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. Switching Time Characteristic
Circuit Simulation result
20V
10V
0V
1.7us 1.8us 2.0us 2.2us 2.3us
V(U1:G) V(U1:D)/3.5
Time
Evaluation circuit
L1 R2
50nH
U1 1
L2
V1
30nH
35
V1 = 0 V2 R4 2SK3940
V2 = 10
TD = 2u 4.7
TR = 6n
TF = 7n
PW = 10u
PER = 30u
0
Simulation Result
ID=35 A, VDD=35V
Measurement Simulation Error(%)
VGS=0/10V
ton 50.000 ns 50.146 ns 0.292
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Output Characteristic
Circuit Simulation result
200A
7
160A
6.8
6.6
120A
6.4
80A 6.2
6
40A 5.8
VGS=5.5 V
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U1
2SK3940
Vv ariable
Vstep
5
5.5
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. Forward Current Characteristic
Circuit Simulation Result
1.0KA
100A
10A
1.0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
2SK3940
V1
0Vdc
U1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
100
Measurement
Simulation
Drain reverse current IDR(A)
10
1
0 0.2 0.4 0.6 0.8 1 1.2
Source-Drain voltage VSD(V)
Simulation Result
VSD(V)
Ifwd(A) Measurement Simulation %Error
1 0.7 0.7 0
2 0.725 0.7247 -0.041
5 0.76 0.7597 -0.039
10 0.79 0.791 0.127
20 0.83 0.830 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
14.7us 14.9us 15.1us 15.3us 15.5us 15.7us
I(RL)
Time
Evaluation Circuit
RL
50
V1 = -9.4 V1 U1
V2 = 10.7
TD = 0 D2SK3940
TR = 10n
TF = 10n
PW = 15u
PER = 100u
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
Trj(ns) 66 66.015 0.023
Trb(ns) 156 156.484 0.310
Trr(ns) 222 222.499 0.225
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Reverse Recovery Characteristic Reference
Trj=66(ns)
Trb=156(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result
10mA
5mA
0A
0V 25V 50V
I(R1)
V_V1
Evaluation Circuit
U1
R1
0.01m
2SK3940 R2
V1
0Vdc 1G
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006