The document provides a detailed modeling report for the bipolar junction transistor part number 2SC5376FV-B from Toshiba, including various SPICE model parameters related to its performance. It contains simulation and measurement results on characteristics like current gain, saturation voltage, and transit time, with a focus on comparison between theoretical and practical values. Additionally, it details specific evaluation circuits and their performance metrics, demonstrating the transistor's behavior under different conditions.

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Bee Technologies Inc.
COMPONENTS: BIPOLAR JUNCTION TRANSISTOR
PART NUMBER: 2SC5376FV-B
MANUFACTURER: TOSHIBA
Device Modeling Report

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BJT SPICE Model Parameters
PSpice model
parameter
Model description
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC
Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS

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Ic
Vce
VAR
(X1,Y1)
(X2,Y2)
Y=aX+b
Reverse
Reverse Early Voltage Characteristic

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Reverse DC Beta Characteristic (IE vs. hFE)
Emitter Current (A)
Measuremen
tSimulation

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Ic
Vce
VAF
(X1,Y1)
(X2,Y2)
Y=aX+b
Forward
Forward Early Voltage Characteristic

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C-B Capacitance Characteristics
REVERSE VOLTAGE VR (V)
E-B Capacitance Characteristics
REVERSE VOLTAGE VR (V)
Measurement
Simulation
Measurement
Simulation

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V1
2V
I1
0
Q1
Q2SC5376FV-B
IC(Q1)
1.0mA 10mA 100mA 1.0A
IC(Q1)/ IB(Q1)
10
100
1.0K
10K
Transistor hFE-IC Characteristics
Simulation result
Evaluation circuit

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Comparison Graph
Simulation result
Comparison table
IC (mA)
hFE
%Error
Measurement Simulation
1.0 500.000 503.386 0.68
2.0 495.000 501.701 1.35
5.0 490.000 496.647 1.36
10.0 476.000 488.224 2.57
20.0 461.000 471.377 2.25
50.0 415.000 424.417 2.27
100.0 362.000 371.724 2.69
200.0 298.000 302.951 1.66
500.00 201.500 204.845 1.66
VCE=2V

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IC(Q1)
100uA 1.0mA 10mA 100mA 1.0A
V(Q1:c)
1.0mV
10mV
100mV
1.0V
VC
I1
0Adc
0
F1
F
20
Q1
Q2SC5376FV-B
VCE(Sat)-IC Characteristics
Simulation result
Evaluation circuit

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Comparison Graph
Simulation result
Comparison table
IC (mA)
VCE(sat) (mV)
%Error
Measurement Simulation
0.1 6.910 6.752 -2.29
0.2 7.020 6.816 -2.91
0.5 7.130 6.948 -2.55
1 7.450 7.284 -2.23
2 8.010 7.851 -1.99
5 9.800 9.519 -2.87
10 12.450 12.232 -1.75
20 17.600 17.511 -0.51
50 32.400 32.760 1.11
100 55.600 57.363 3.17
200 102.200 105.509 3.24
500 254.000 246.906 -2.79
IC/IB =20

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VC
I1
0
F1
F
20
Q1
Q2SC5376FV-B
VBE(Sat)-IC Characteristics
Simulation result
IC(Q1)
100uA 1.0mA 10mA 100mA 500mA
V(Q1:b)
100mV
1.0V
10V
50V
Evaluation circuit

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Comparison Graph
Simulation result
Comparison table
IC (mA)
VBE(sat) (V)
%Error
Measurement Simulation
0.1 0.596 0.618 3.69
0.2 0.607 0.636 4.78
0.5 0.635 0.660 3.94
1 0.650 0.678 4.31
2 0.667 0.697 4.50
5 0.698 0.724 3.72
10 0.710 0.745 4.93
20 0.750 0.772 2.93
50 0.815 0.821 0.74
100 0.856 0.880 2.80
200 0.948 0.980 3.38
IC/IB =20

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Time
14.0us 14.4us 14.8us 15.2us 15.6us
1 V(L2:2) 2 V(L1:1)
-10.0V
-7.5V
-5.0V
-2.5V
0V
2.5V
5.0V
7.5V
10.0V
1
-10.0V
-7.5V
-5.0V
-2.5V
0V
2.5V
5.0V
7.5V
10.0V
2
>>
V1
TD = 5u
TF = 1ns
PW = 10us
PER = 500us
V1 = -5
TR = 1ns
V2 = 5
R1
800
0
VCC
6
R2
800
D2
D1N5817
D1
D1N5817
RL
60
L1
30nH
1 2
L2
30n
1 2 Q1
Q2SC5376FV-B
Switching Characteristics
Evaluation circuit
Comparison table
Test condition: VCC=6(V),RL=60(Ω), IB1= -IB2=5(mA)
Parameter Unit Measurement Simulation %Error
tf ns 40.000 40.377 0.94
tstg ns 170.000 169.417 -0.34
Circuit Simulation Result

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V_V1
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V
IC(Q1)
0A
0.2A
0.4A
0.6A
0.8A
1.0A
V1
0
I1
Q1
Q2SC5376FV-B
Output Characteristics
Simulation result
Evaluation circuit
IB=0.5 mA
1 mA
2 mA
3 mA
4 mA
6 mA
5 mA

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Output Characteristics Reference