This document provides a SPICE model and characterization data for the 1SS272 general purpose rectifier diode manufactured by Toshiba. It includes: 1) A SPICE subcircuit model for the diode with parameters for its electrical behavior. 2) Graphs comparing the diode's simulated and measured forward/reverse current characteristics and junction capacitance over voltage. 3) Simulation results for the diode's reverse recovery characteristic along with comparison to measurement data.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: 1SS272
MANUFACTURER: TOSHIBA
Device Modeling Report
Bee Technologies Inc.

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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SPICE MODEL
Circuit Configuration
*$
* PART NUMBER: 1SS272
* MANUFACTURER: TOSHIBA
* All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
.SUBCKT 1SS272 1 2 3 4
D1 4 1 D1SS272
D2 3 2 D1SS272
.MODEL D1SS272 D
+ IS=2.0844E-9
+ N=1.7361
+ RS=20.961E-3
+ IKF=9.9082E-3
+ CJO=891.56E-15
+ M=.10662
+ VJ=9.9900
+ ISR=0
+ BV=80
+ IBV=100.00E-9
+ TT=10.084E-9
.ENDS
*$
(4)
(3)
(1)
(2)

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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DIODE MODEL PARAMETERS
PSpice model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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V_V1
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
10uA
100uA
1.0mA
10mA
100mA
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
V1
0Vdc
R1
0.01m
0
U1
1SS272

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Comparison Graph
Circuit Simulation Result
Simulation Result
Ifwd (A)
Vfwd (V)
%Error
Measurement Simulation
0.00001 0.380 0.380 0.00
0.00002 0.410 0.411 0.24
0.00005 0.455 0.452 -0.66
0.0001 0.485 0.483 -0.41
0.0002 0.515 0.515 0.00
0.0005 0.560 0.557 -0.54
0.001 0.590 0.589 -0.17
0.002 0.620 0.622 0.32
0.005 0.670 0.670 0.00
0.01 0.715 0.712 -0.42
0.02 0.760 0.762 0.26
0.05 0.840 0.838 -0.24
0.1 0.900 0.900 0.00

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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V(N11360)
1.0V 10V300mV 60V
I(V2)/(80V/1u)
1.0p
200f
1.6p
Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit
U1
1SS272
0
V1
TD = 0
TF = 10ns
PW = 20us
PER = 10us
V1 = 0
TR = 1us
V2 = 80
V2
0Vdc

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Comparison Graph
Circuit Simulation Result
Simulation Result
Vrev (V)
Ct (pF)
%Error
Measurement Simulation
0.200 0.889 0.890 0.11
0.500 0.885 0.886 0.11
1.000 0.882 0.883 0.11
2.000 0.870 0.874 0.46
5.000 0.850 0.854 0.47
10.000 0.830 0.828 -0.24
20.000 0.795 0.792 -0.38
40.000 0.750 0.750 0.00
60.000 0.730 0.724 -0.82

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Time
19.97us 19.99us 20.01us 20.03us 20.05us 20.07us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 6.800 6.870 1.029
V1
TD = 0.8ns
TF = 10ns
PW = 20us
PER = 50us
V1 = -9.2V
TR = 5ns
V2 = 11V
R1
50
0
U1
1SS272

9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Reverse Recovery Characteristic Reference
Trj = 6.8 (ns)
Trb= 2.2 (ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Relation between trj and trb
Example