This document provides a summary of SPICE model parameters and simulation results for the power MOSFET and body diode components in the TPC8115 device from Toshiba. The model parameters, evaluation circuits, and comparison of measurement and simulation results are given for key electrical characteristics including transconductance, drain current, gate charge, switching time, and reverse recovery. Simulation results show good agreement with measurements for various operating conditions of the MOSFET and diode components in the device.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Power MOSFET (Model Parameters)
PART NUMBER: TPC8115
MANUFACTURER: TOSHIBA
Body Diode (Model Parameters) / ESD Protection Diode

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MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

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0
20
40
60
80
0 2 4 6 8 10
gfs(S)
Drain Current ID (-A)
Measurement
Simulation
Transconductance Characteristic
Circuit Simulation Result
Comparison table
-Id(A)
gfs(S)
Error (%)
Measurement Simulation
1 16.750 17.179 2.56
2 23.500 24.122 2.65
5 38.500 37.613 -2.30
10 54.000 52.373 -3.01

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V1
0Vdc
V2
-10
0
V3
0Vdc
U1
TPC8115
V_V1
0V -1.0V -2.0V -3.0V -4.0V
I(V3)
0A
-4A
-8A
-12A
-16A
-20A
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit

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Comparison Graph
Circuit Simulation Result
Simulation Result
-ID(A)
-VGS(V)
Error (%)
Measurement Simulation
1 1.355 1.364 0.66
2 1.425 1.413 -0.84
5 1.525 1.510 -0.98
10 1.630 1.621 -0.55
20 1.795 1.781 -0.78

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U1
TPC8115
0
V3
0Vdc
VDS
0Vdc
V1
-4.5
V_VDS
0V -8mV -16mV -24mV -32mV -40mV
I(V3)
0A
-1.0A
-2.0A
-3.0A
-4.0A
-5.0A
-6.0A
Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID= -5A, VGS= -4.5V Measurement Simulation Error (%)
RDS (on) mΩ 6.50 6.50 0.00

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Time*1mA
0 20n 40n 60n 80n 100n 120n 140n 160n
V(W1:4)
0V
-1.0V
-2.0V
-3.0V
-4.0V
-5.0V
-6.0V
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD= -16V,ID= -10A
,VGS= -5V
Measurement Simulation Error (%)
Qgs nC 18.000 18.277 1.54
Qgd nC 34.000 33.943 -0.17
Qg nC 115.000 87.517 -23.90
VDD
-16
I1TD = 0
TF = 5n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 5n
-
+
W1
ION = 0uA
IOFF = 1mA
W
I2
10
0
D2
Dbreak
U1
TPC8115

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Capacitance Characteristic
Simulation Result
VSD(V)
Cbd(pF)
Error(%)
Measurement Simulation
0.1 800.000 807.000 0.88
0.2 700.000 695.000 -0.71
0.5 510.000 508.000 -0.39
1.0 360.000 363.000 0.83
2.0 240.000 241.000 0.42
5.0 130.000 129.000 -0.77
10.0 80.000 79.000 -1.25
20.0 47.000 47.800 1.70
Simulation
Measurement

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Time
0.90us 0.95us 1.00us 1.05us 1.10us 1.15us 1.20us
V(U1:4)*2 V(U1:5)
0V
-2V
-4V
-6V
-8V
-10V
-12V
-14V
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID= -5A, VDD= -10V
VGS=0/-5V
Measurement Simulation Error(%)
ton ns 26.000 26.805 3.10
0
VDD
-10.05Vdc
V2
TD = 1u
TF = 5n
PW = 10u
PER = 20u
V1 = 0
TR = 5n
V2 = 10
U1
TPC8115
L2
50nH
R2
4.7
R1 4.7
L1
30nH
RL
2

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V2
-5
V1
0
0
V3
0Vdc
U1
TPC8115
V_V2
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
0A
-10A
-20A
-30A
-40A
Output Characteristic
Circuit Simulation result
Evaluation circuit
VGS= -1.5
-2
-2.5
-3
-1.55-1.6
-1.65
-1.8
-4.5
-10

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U1
TPC8115
VDS
0
Vsense
0Vdc
V_VDS
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(Vsense)
100mA
1.0A
10A
100A
BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit

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0.1
1.0
10.0
100.0
0 0.2 0.4 0.6 0.8 1 1.2
DrainreversecurrentIDR(-A)
Drain - Source voltage VDS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
IDR(-A)
VDS (V)
%Error
Measurement Simulation
0.1 0.520 0.521 0.19
0.2 0.545 0.549 0.73
0.5 0.580 0.580 -0.09
1.0 0.608 0.609 0.21
2.0 0.648 0.645 -0.42
5.0 0.707 0.708 0.11
10.0 0.770 0.770 -0.04
20.0 0.850 0.851 0.15
40.0 0.970 0.970 -0.03

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U1
TPC8115
V1
TD = 145ns
TF = 10ns
PW = 2us
PER = 10us
V1 = -9.6V
TR = 10ns
V2 = 10.6v
R1
50
0
Time
0.4us 1.2us 2.0us 2.8us 3.6us 4.4us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj ns 28.000 29.000 3.57

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Reverse Recovery Characteristic Reference
Trj= 28 (ns)
Trb= 208 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
Measurement

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R1
0.001m
V1
0Vdc
0
U1
TPC8115
R2
100MEG
V_V1
0V -5V -10V -15V -20V -25V -30V -35V -40V -45V
I(R1)
0A
-2mA
-4mA
-6mA
-8mA
-10mA
ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
Evaluation Circuit

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Zener Voltage Characteristic Reference