Download to read offline
Uploaded byTsuyoshi Horigome
MBN600E45A PSpice Model (Free SPICE Model)
The document provides a SPICE model and simulation results for an Insulated Gate Bipolar Transistor (IGBT) part number MBN600E45A manufactured by Hitachi. Key characteristics such as transfer, saturation, output, rise/fall times and reverse recovery are modeled and compared to manufacturer data with good agreement within a few percent error. Simulation results are aimed to help designers evaluate this IGBT for switching applications operating at 600A and 2.6kV.
More Related Content
Similar to MBN600E45A PSpice Model (Free SPICE Model)
MBN600E45A PSpice Model (Free SPICE Model)
- 1. All Rights ReservedCopyright (C) Bee Technologies Inc. 2012 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: Insulated Gate Bipolar Transistor (IGBT) PART NUMBER: MBN600E45A MANUFACTURER: HITACHI
- 2. All Rights ReservedCopyright (C) Bee Technologies Inc. 2012 2 SPICE MODEL *$ * PART NUMBER: MBN600E45A * MANUFACTURER: HITACHI .SUBCKT MBN600E45A C G E Q_Q1 83 81 85 QOUT R_RLM LM 0 10MEG E_E1 C2 C1 VALUE { V(LM)*0.18805*PWR(I(V_VC),0.39653) } R_RE 83 E 1U C_CGD 82 1 100n D_DFWD E C DMBN600E45A M_S2 2 81 82 82 MNSW D_DBE 85 81 DE R_R2 2 81 100MEG V_VC C C2 0 D_D1 2 81 DGD M_S1 1 82 81 81 MNSW R_R1 82 1 100MEG R_RC C1 85 1U E_ELM LM 0 TABLE { I(V_VC) } + ( (0,0) (0.09,0) (0.1,1) ) D_DDS 83 81 DO R_RG G 82 5.7 M_M1 81 82 83 83 MFIN C_CGE 82 83 85.8n .MODEL DGD D ( CJO=1200p M=.1 VJ=.3905 ) .MODEL MFIN NMOS (LEVEL=3 L=1U W=1U LEVEL=3 + VTO=6.475 KP=77 THETA=55m ) .MODEL DO D (IS=3.79p) .MODEL DE D (IS=3.79p N=2) .MODEL QOUT PNP (IS=3.79p NF=1.00 BF=0.4671 + XTB=1.3 CJE=0.1n + VAF=100 TF=67n ) .MODEL MNSW NMOS Vto=-0.01 KP=100 N=1Meg Rds=1e12 .ENDS *$ .MODEL DMBN600E45A D + IS=11.900E-3 N=7.0116 RS=1.6157E-3 IKF=23.932 + CJO=0.1E-9 M=.3333 VJ=.3905 + BV=5850 IBV=12m TT=183n *$
- 3. All Rights ReservedCopyright (C) Bee Technologies Inc. 2012 3 U1 MBN600E45A Circuit Configuration IGBT Subcircuit DO DDS DFWD S1 MNSW M1 MFIN Q1 QOUT RE 1U E 85 RC 1U C RG {RG} G 82 CGE {Cies-Cres} 83 81 C2 C1 DGD D1 0 R1 100MEG CGD 100n 1 R2 100MEG S2 MNSW 2 IN+ IN- OUT+ OUT- E1 VC DE DBE
- 4. All Rights ReservedCopyright (C) Bee Technologies Inc. 2012 4 V_VGE 0V 3V 6V 9V 12V 15V -I(VCE) 0A 0.2KA 0.4KA 0.6KA 0.8KA 1.0KA 1.2KA VGE 0 VCE 9V U1 MBN600E45A Transfer Characteristic Circuit Simulation result Evaluation circuit
- 5. All Rights ReservedCopyright (C) Bee Technologies Inc. 2012 5 Transfer Characteristic Comparison Graph Simulation result Comparison table Test condition: VCE=9 (V) IC (A) VGE (V) %Error Measurement Simulation 15.5 7.000 7.000 0.00 323.5 9.000 9.004 0.04 942.0 11.000 11.002 0.02
- 6. All Rights ReservedCopyright (C) Bee Technologies Inc. 2012 6 I_Ic 0A 0.2KA 0.4KA 0.6KA 0.8KA 1.0KA V(C,E) 0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V 7.0V 8.0V VGE 15V Rwire 1U ICU1 MBN600E45A E C G 0 Saturation Characteristic Circuit Simulation result Evaluation circuit
- 7. All Rights ReservedCopyright (C) Bee Technologies Inc. 2012 7 Saturation Characteristic Comparison Graph Simulation result Comparison table Test condition: VGE=15 (V) IC (A) VCE (V) %Error Measurement Simulation 50 1.706 1.715 0.53 100 2.096 2.091 -0.24 200 2.647 2.636 -0.42 500 3.823 3.821 -0.05 1000 5.400 5.425 0.46
- 8. All Rights ReservedCopyright (C) Bee Technologies Inc. 2012 8 V_VCE 0V 1.0V 3.0V 5.0V 7.0V 9.0V -I(VCE) 0A 0.2KA 0.4KA 0.6KA 0.8KA 1.0KA 1.2KA VGE 0 VCE U1 MBN600E45A Output Characteristic Circuit Simulation result Evaluation circuit VGE=7V 9V 11V 13V15V
- 9. All Rights ReservedCopyright (C) Bee Technologies Inc. 2012 9 L2 130nH 1 2 0 VCC 2600 Rg 3.3 V1TD = 1u TF = 10n PW = 9.99u PER = 100u V1 = -15 TR = 10n V2 = 15 L1 1500uH IC = 600 1 2 FWD C G C K U1 MBN600E45A U2 MBN600E45A Time 0s 2.0us 4.0us 6.0us 8.0us V(C) 0V 1.0KV 2.0KV 3.0KV Rise Time Characteristic Circuit Simulation result Evaluation circuit Test condition: VCC=2,600V, IC=600A, L=130nH, RG=3.3, VGE=+/-15V Parameter Unit Measurement Simulation %Error tr us 1.6 1.589 -0.69
- 10. All Rights ReservedCopyright (C) Bee Technologies Inc. 2012 10 Time 10us 11us 12us 13us 14us 15us 16us 17us 18us I(C) 0A 100A 200A 300A 400A 500A 600A 700A 800A L2 130nH 1 2 0 VCC 2600 Rg 3.3 V1TD = 1u TF = 10n PW = 9.99u PER = 100u V1 = -15 TR = 10n V2 = 15 L1 1500uH IC = 600 1 2 FWD C G C K U1 MBN600E45A U2 MBN600E45A Fall Time Characteristic Circuit Simulation result Evaluation circuit Test condition: VCC=2,600V, IC=600A, L=130nH, RG=3.3, VGE=+/-15V Parameter Unit Measurement Simulation %Error tf us 1.9 1.885 -0.79
- 11. All Rights ReservedCopyright (C) Bee Technologies Inc. 2012 11 V_VF 0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V 7.0V 8.0V -I(VF) 0A 0.2KA 0.4KA 0.6KA 0.8KA 1.0KA 1.2KA VF 0 U1 MBN600E45A FWD Forward Current Characteristic Circuit Simulation result Evaluation circuit
- 12. All Rights ReservedCopyright (C) Bee Technologies Inc. 2012 12 FWD Forward Current Characteristic Comparison Graph Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 20 1.176 1.453 23.55 50 1.706 1.759 3.11 100 2.024 2.069 2.22 200 2.521 2.475 -1.82 500 3.364 3.290 -2.20 1000 4.310 4.349 0.90
- 13. All Rights ReservedCopyright (C) Bee Technologies Inc. 2012 13 Time 0s 0.5us 1.5us 2.5us 3.5us 4.5us I(FWD) -800A -600A -400A -200A 0A 200A 400A 600A 800A L2 130nH 1 2 0 VCC 2600 Rg 3.3 V1TD = 1u TF = 10n PW = 9.99u PER = 100u V1 = -15 TR = 10n V2 = 15 L1 1500uH IC = 600 1 2 FWD C G C K U1 MBN600E45A U2 MBN600E45A Reverse Recovery Characteristic Circuit Simulation result Evaluation circuit Test condition: VCC=2,600V, IC=600A, L=130nH, RG=3.3, VGE=+/-15V Parameter Unit Measurement Simulation %Error trr us 0.6 0.599 -0.17
- 14. All Rights ReservedCopyright (C) Bee Technologies Inc. 2012 14 L2 130nH 1 2 0 VCC 2600 Rg 3.3 V1TD = 1u TF = 10n PW = 9.99u PER = 100u V1 = -15 TR = 10n V2 = 15 L1 1500uH IC = 600 1 2 FWD C G K C U1 MBN600E45A U2 MBN600E45A Appendix A: Switching (tr, tf and trr) test circuit