This document provides a summary report of the SPICE modeling and simulation results for the TPCP8303 power MOSFET and its internal body diode and ESD protection diode manufactured by Toshiba. It includes 14 pages describing the MOSFET model parameters and simulation results for various static and dynamic characteristics along with comparisons to measurement data. Simulation results are provided for the forward and reverse characteristics of the internal body diode and the zener voltage characteristic of the ESD protection diode.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Power MOSFET (Professional Model)
PART NUMBER: TPCP8303
MANUFACTURER: TOSHIBA
Body Diode (Professional Model) / ESD Protection Diode

2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
2
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
3
0
4
8
12
16
20
24
0.0 2.0 4.0 6.0 8.0 10.0
Gfs(S)
Drain Current ID (-A)
Measurement
Simulation
Transconductance Characteristic
Circuit Simulation Result
Comparison table
-Id(A)
gfs(S)
Error (%)
Measurement Simulation
0.1 2.080 1.994 -4.14
0.2 2.925 2.816 -3.72
0.5 4.660 4.442 -4.69
1 6.500 6.264 -3.63
2 8.700 8.823 1.41
5 13.600 13.844 1.79
10 19.100 19.406 1.60

4. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
4
V1
0Vdc
V2
-10
0
V3
0Vdc
U1
TPCP8303
V_V1
0V -0.4V -0.8V -1.2V -1.6V -2.0V
I(V3)
0A
-2A
-4A
-6A
-8A
-10A
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit

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5
0
2
4
6
8
10
0.0 0.4 0.8 1.2 1.6 2.0
DrainCurrentID(-A)
Gate - Source Voltage VGS (-V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
-ID(A)
-VGS(V)
Error (%)
Measurement Simulation
0.1 0.680 0.659 -3.09
0.2 0.730 0.701 -3.97
0.5 0.820 0.783 -4.51
1 0.900 0.877 -2.56
2 1.015 1.009 -0.59
5 1.280 1.275 -0.39
10 1.580 1.576 -0.25

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6
U1
TPCP8303
0
V3
0Vdc
VDS
0Vdc
V1
-4.5
V_VDS
0V -20mV -40mV -60mV -80mV
I(V3)
0A
-0.4A
-0.8A
-1.2A
-1.6A
-1.9A
Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID= -1.9A, VGS= -4.5V Measurement Simulation Error (%)
RDS (on) mΩ 41.000 41.006 0.01

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7
Time*1mA
0 4n 8n 12n 16n 20n
V(W1:4)
0V
-2V
-4V
-6V
-8V
-10V
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD= -16V,ID=-3.8A
,VGS= -5V
Measurement Simulation Error (%)
Qgs nC 1.600 1.597 -0.22
Qgd nC 2.100 2.090 -0.50
Qg nC 10.000 10.153 1.53
VDD
-16
I1TD = 0
TF = 5n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 5n
-
+
W1
ION = 0uA
IOFF = 1mA
W
I2
3.8
0
D2
Dbreak
U1
TPCP8303

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Capacitance Characteristic
Simulation Result
VSD(V)
Cbd(pF)
Error(%)
Measurement Simulation
0.1 185.000 184.000 -0.54
0.2 164.000 165.000 0.61
0.5 135.000 134.500 -0.37
1.0 105.000 107.000 1.90
2.0 82.000 81.500 -0.61
5.0 55.000 54.200 -1.45
10.0 40.000 39.300 -1.75
20.0 28.000 27.800 -0.71
Simulation
Measurement

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9
0
VDD
-10.05Vdc
V2
TD = 1u
TF = 5n
PW = 10u
PER = 20u
V1 = 0
TR = 5n
V2 = 10
U1
TPCP8303
L2
50nH
R2
4.7
R1 4.7
L1
30nH
RL
5.3
Time
0.84us 0.92us 1.00us 1.08us 1.16us 1.24us
V(U1:4)*2 V(U1:5)
2V
0V
-2V
-4V
-6V
-8V
-10V
-12V
-14V
-16V
-18V
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID= -1.9A, VDD= -10V
VGS=0/-5V
Measurement Simulation Error(%)
ton ns 20.000 20.191 0.96

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10
V2
-10
V1
0
0
V3
0Vdc
U1
TPCP8303
V_V2
0V -0.4V -0.8V -1.2V -1.6V -2.0V
I(V3)
0A
-4A
-8A
-12A
-16A
-20A
Output Characteristic
Circuit Simulation result
Evaluation circuit
VGS= -1.2
-2
-2.5-3
-1.4
-1.6
-1.8
-2.2-4-10 -6

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U1
TPCP8303
VDS
0
Vsense
0Vdc
V_VDS
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(Vsense)
100mA
1.0A
10A
100A
BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit

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12
0.1
1.0
10.0
100.0
0 0.2 0.4 0.6 0.8 1 1.2
DrainreversecurrentIDR(-A)
Drain - Source voltage VDS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
IDR(A)
VDS (V)
%Error
Measurement Simulation
0.1 0.530 0.531 0.09
0.2 0.570 0.568 -0.32
0.5 0.625 0.625 -0.06
1.0 0.675 0.677 0.36
2.0 0.745 0.745 0.03
5.0 0.870 0.863 -0.79
10.0 1.000 0.988 -1.24

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V1
TD = 430ns
TF = 20ns
PW = 2us
PER = 10us
V1 = -9.6V
TR = 10ns
V2 = 10.6v
R1
50
0
U1
DTPCP8303_P
Time
2.0us 2.1us 2.2us 2.3us 2.4us 2.5us 2.6us 2.7us 2.8us 2.9us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj ns 20.000 20.172 0.86
trb ns 46.000 46.090 0.20
trr ns 66.000 66.262 0.40

14. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
14
Reverse Recovery Characteristic Reference
Trj= 20 (ns)
Trb= 46 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
Measurement

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15
R1
0.001m
V1
0Vdc
0
U1
TPCP8303 R2
100MEG
V_V1
0V -5V -10V -15V -20V -25V -30V -35V -40V -45V
I(R1)
0A
-2mA
-4mA
-6mA
-8mA
-10mA
ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
Evaluation Circuit

16. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
16
Zener Voltage Characteristic Reference