The document provides detailed specifications and simulation results for the bipolar junction transistor 2SA2154MFV-Y manufactured by Toshiba. It includes parameters such as saturation current, forward and reverse beta characteristics, capacitance characteristics, and comparison tables of measured versus simulated values. The report aims to aid in circuit design and evaluation by offering comprehensive data on the transistor's performance.

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1
Bee Technologies Inc.
COMPONENTS: BIPOLAR JUNCTION TRANSISTOR
PART NUMBER: 2SA2154MFV-Y
MANUFACTURER: TOSHIBA
Device Modeling Report

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BJT SPICE Model Parameters
PSpice model
parameter
Model description
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC
Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS

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Ic
Vce
VAR
(X1,Y1)
(X2,Y2)
Y=aX+b
Reverse
Reverse Early Voltage Characteristic

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Reverse DC Beta Characteristic (IE vs. hFE)
Emitter Current (A)
Measuremen
tSimulation

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Ic
Vce
VAF
(X1,Y1)
(X2,Y2)
Y=aX+b
Forward
Forward Early Voltage Characteristic

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C-B Capacitance Characteristics
REVERSE VOLTAGE VR (V)
E-B Capacitance Characteristics
REVERSE VOLTAGE VR (V)
Measurement
Simulation
Measurement
Simulation

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V1
-1V
I1
0
Q1
Q2SA2154MFV-Y
IC(Q1)
-100uA -100mA
IC(Q1)/ IB(Q1)
10
100
1.0K
Transistor hFE-IC Characteristics
Simulation result
Evaluation circuit

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Comparison Graph
Simulation result
Comparison table
-IC (mA)
hFE
%Error
Measurement Simulation
0.1 185.000 180.425 -2.47
0.2 182.000 180.240 -0.97
0.5 180.000 179.671 -0.18
1 178.000 179.067 0.60
2 176.000 178.178 1.24
5 173.000 176.078 1.78
10 170.000 173.017 1.77
20 167.000 167.348 0.21
50 155.000 151.745 -2.10
100 129.000 128.727 -0.21
VCE=-1V

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IC(Q1)
-100uA -100mA
V(Q1:c)
-10mV
-1.0V
VC
I1
0Adc
0
F1
F
10
Q1
Q2SA2154MFV-Y
VCE(Sat)-IC Characteristics
Simulation result
Evaluation circuit

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Comparison Graph
Simulation result
Comparison table
-IC (mA)
-VCE(sat) (mV)
%Error
Measurement Simulation
0.1 29.980 30.638 2.19
0.2 30.000 30.128 0.43
0.5 29.980 30.035 0.18
1 32.100 30.762 -4.17
2 33.500 32.766 -2.19
5 38.700 39.091 1.01
10 48.600 48.851 0.52
20 64.500 66.201 2.64
50 108.700 111.029 2.14
100 178.600 177.719 -0.49
IC/IB =10

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VC
I1
0
F1
F
10
Q1
Q2SA2154MFV-Y
VBE(Sat)-IC Characteristics
Simulation result
IC(Q1)
-100uA -100mA
V(Q1:b)
-100mV
-10V
Evaluation circuit

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Comparison Graph
Simulation result
Comparison table
-IC (mA)
-VBE(sat) (V)
%Error
Measurement Simulation
0.1 0.597 0.610 2.18
0.2 0.608 0.628 3.29
0.5 0.638 0.654 2.51
1 0.668 0.674 0.87
2 0.697 0.695 -0.29
5 0.731 0.728 -0.41
10 0.776 0.759 -2.19
20 0.803 0.800 -0.37
50 0.871 0.886 1.72
100 0.953 1.000 4.91
IC/IB =10

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Time
24.4us 24.8us 25.2us 25.6us 26.0us
1 -V(L2:1) 2 -V(L1:1)
-4.0V
-3.0V
-2.0V
-1.0V
0V
1.0V
2.0V
3.0V
4.0V
1
-40V
-30V
-20V
-10V
0V
10V
20V
30V
40V
2
>>
V1
TD = 4.99u
TF = 20ns
PW = 20us
PER = 2000us
V1 = 0
TR = 20ns
V2 = -3
R1
1100
0
VCC
-30
R2
380
RL
600
L1
30nH
1 2
L2
30n
1 2 Q1
Q2SA2154MFV-Y
D1
D1FS6
D2
D1FS6
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Comparison table
Test condition: VCC=-30(V),RL=600(Ω), IB1= -IB2=-5(mA)
Parameter Unit Measurement Simulation %Error
tf ns 22.000 22.082 0.37
tstg ns 304.000 301.705 -0.75

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Switching Characteristics Reference

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V_V1
0V -1.0V -2.0V -3.0V -4.0V -5.0V
IC(Q1)
0A
-20mA
-40mA
-60mA
-80mA
-100mA
-120mA
V1
0
I1
Q1
Q2SA2154MFV-Y
Output Characteristics
Simulation result
Evaluation circuit
IB= -0.1 mA
-0.2
-0.3
-0.5
-0.7
-1.0m

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Output Characteristics Reference