The document is a detailed device modeling report for the bipolar junction transistor (BJT) part number 2SC5703, produced by Toshiba. It includes specific parameters and simulation results for characteristics such as saturation current, forward and reverse beta, and capacitance. The document contains measurement and simulation data, comparison tables, and graphs evaluating the performance of the transistor under various conditions.

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Bee Technologies Inc.
COMPONENTS: BIPOLAR JUNCTION TRANSISTOR
PART NUMBER: 2SC5703
MANUFACTURER: TOSHIBA
Device Modeling Report

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BJT SPICE Model Parameters
PSpice model
parameter
Model description
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC
Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS

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Ic
Vce
VAR
(X1,Y1)
(X2,Y2)
Y=aX+b
Reverse
Reverse Early Voltage Characteristic

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Reverse DC Beta Characteristic (IE vs. hFE)
Emitter Current (A)
Measuremen
tSimulation

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Ic
Vce
VAF
(X1,Y1)
(X2,Y2)
Y=aX+b
Forward
Forward Early Voltage Characteristic

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C-B Capacitance Characteristics
REVERSE VOLTAGE VR (V)
E-B Capacitance Characteristics
REVERSE VOLTAGE VR (V)
Measurement
Simulation
Measurement
Simulation

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V1
2V
I1
0
Q1
Q2SC5703
IC(Q1)
1.0mA 10mA 100mA 1.0A 10A
IC(Q1)/ IB(Q1)
1.0
10
100
1.0K
10K
Transistor hFE-IC Characteristics
Simulation result
Evaluation circuit

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Comparison Graph
Simulation result
Comparison table
IC (A)
hFE
%Error
Measurement Simulation
0.001 800.000 808.297 1.04
0.002 800.000 808.375 1.05
0.005 800.000 808.610 1.08
0.01 800.000 809.001 1.13
0.02 800.000 809.784 1.22
0.05 800.000 812.131 1.52
0.1 800.000 812.068 1.51
0.2 786.000 798.481 1.59
0.5 750.000 759.362 1.25
1 692.000 696.616 0.67
2 593.000 577.708 -2.58
5 283.000 277.510 -1.94
VCE=2V

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IC(Q1)
1.0mA 10mA 100mA 1.0A 10A
V(Q1:c)
1.0mV
10mV
100mV
1.0V
VC
I1
0Adc
0
F1
F
50
Q1
Q2SC5703
VCE(Sat)-IC Characteristics
Simulation result
Evaluation circuit

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Comparison Graph
Simulation result
Comparison table
IC (A)
VCE(sat) (mV)
%Error
Measurement Simulation
0.001 14.000 13.973 -0.19
0.002 13.800 13.999 1.44
0.005 13.600 14.150 4.04
0.01 13.900 14.435 3.85
0.02 14.700 15.016 2.15
0.05 16.100 16.734 3.94
0.1 18.900 19.484 3.09
0.2 24.100 24.662 2.33
0.5 38.600 38.505 -0.25
1 58.400 58.748 0.60
2 91.800 94.676 3.13
IC/IB =50

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VC
I1
0
F1
F
50
Q1
Q2SC5703
VBE(Sat)-IC Characteristics
Simulation result
IC(Q1)
1.0mA 10mA 100mA 1.0A 10A
V(Q1:b)
100mV
1.0V
10V
Evaluation circuit

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Comparison Graph
Simulation result
Comparison table
IC (A)
VBE(sat) (V)
%Error
Measurement Simulation
0.001 0.541 0.556 2.77
0.002 0.563 0.574 2.01
0.005 0.594 0.598 0.67
0.01 0.612 0.617 0.82
0.02 0.634 0.636 0.32
0.05 0.662 0.663 0.15
0.1 0.690 0.685 -0.72
0.2 0.723 0.713 -1.38
0.5 0.766 0.764 -0.26
1 0.821 0.824 0.37
2 0.891 0.921 3.37
IC/IB =50

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Time
20us 22us 24us 26us 28us 30us
1 V(L2:2) 2 V(L1:1)
-10.0V
-7.5V
-5.0V
-2.5V
0V
2.5V
5.0V
7.5V
10.0V
1
-40V
-30V
-20V
-10V
0V
10V
20V
30V
40V
2
>>
Q1
Q2SC5703
V1
TD = 5u
TF = 1ns
PW = 20us
PER = 2000us
V1 = -5
TR = 1ns
V2 = 5
R1
760
0
VCC
30
R2
1800
D2
D1N5817
D1
D1N5817
RL
19
L1
30nH
1 2
L2
30n
1 2
Switching Characteristics
Evaluation circuit
Comparison table
Test condition: VCC=30(V),RL=19(Ω), IB1= -IB2=53.3(mA)
Parameter Unit Measurement Simulation %Error
tf ns 55.000 56.326 2.41
tstg ns 700.000 703.302 0.47
Circuit Simulation Result

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V_V1
0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V
IC(Q1)
0A
1.0A
2.0A
3.0A
4.0A
5.0A
V1
0
I1
Q1
Q2SC5703
Output Characteristics
Simulation result
Evaluation circuit
IB=1 mA
9 mA
2 mA
3 mA
4 mA
6 mA
5 mA
7 mA
8 mA

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Output Characteristics Reference