SPICE MODEL of 2SA1955FV-B in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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Bee Technologies Inc.
COMPONENTS: BIPOLAR JUNCTION TRANSISTOR
PART NUMBER: 2SA1955FV-B
MANUFACTURER: TOSHIBA
Device Modeling Report

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BJT SPICE Model Parameters
PSpice model
parameter
Model description
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC
Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS

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Ic
Vce
VAR
(X1,Y1)
(X2,Y2)
Y=aX+b
Reverse
Reverse Early Voltage Characteristic

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Reverse DC Beta Characteristic (IE vs. hFE)
Emitter Current (A)
Measuremen
tSimulation

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Ic
Vce
VAF
(X1,Y1)
(X2,Y2)
Y=aX+b
Forward
Forward Early Voltage Characteristic

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C-B Capacitance Characteristics
REVERSE VOLTAGE VR (V)
E-B Capacitance Characteristics
REVERSE VOLTAGE VR (V)
Measurement
Simulation
Measurement
Simulation

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I1
V1
-2V
0
Q1
Q2SA1955FV-B
IC(Q1)
-100uA -1.0A
IC(Q1)/ IB(Q1)
10
100
1.0K
10K
Transistor hFE-IC Characteristics
Simulation result
Evaluation circuit

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Comparison Graph
Simulation result
Comparison table
-IC (mA)
hFE
%Error
Measurement Simulation
0.100 396.000 398.864 0.72
0.200 400.000 398.667 -0.33
0.500 400.000 398.074 -0.48
1.00 400.000 397.086 -0.73
2.00 395.000 395.109 0.03
5.00 388.000 389.180 0.30
10.0 375.000 379.298 1.15
20.0 355.000 359.534 1.28
50.0 308.000 310.068 0.67
100 264.000 255.474 -3.23
200 193.000 192.211 -0.41
VCE=-2V

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VC
I1
0Adc
0
F1
F
20
Q1
Q2SA1955FV-B
VCE(Sat)-IC Characteristics
Simulation result
IC(Q1)
-100uA -1.0A
V(Q1:c)
-1.0mV
-1.0V
Evaluation circuit

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Comparison Graph
Simulation result
Comparison table
-IC (mA)
-VCE(sat) (mV)
%Error
Measurement Simulation
0.1 11.200 10.777 -3.78
0.2 11.000 10.875 -1.14
0.5 11.000 11.127 1.15
1 11.300 11.513 1.88
2 11.900 12.257 3.00
5 13.950 14.404 3.25
10 18.600 17.868 -3.94
20 25.300 24.554 -2.95
50 44.500 43.664 -1.88
100 73.300 74.253 1.30
200 129.600 133.355 2.90
500 305.000 305.733 0.24
IC/IB =20

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VC
I1
0
F1
F
20
Q1
Q2SA1955FV-B
VBE(Sat)-IC Characteristics
Simulation result
IC(Q1)
-100uA -500mA
V(Q1:b)
-100mV
-50V
Evaluation circuit

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Comparison Graph
Simulation result
Comparison table
-IC (mA)
-VBE(sat) (V)
%Error
Measurement Simulation
0.1 0.590 0.603 2.20
0.2 0.610 0.621 1.80
0.5 0.625 0.644 3.04
1 0.645 0.663 2.79
2 0.663 0.681 2.71
5 0.688 0.707 2.76
10 0.720 0.728 1.11
20 0.765 0.752 -1.70
50 0.821 0.792 -3.53
100 0.864 0.837 -3.13
200 0.923 0.907 -1.73
500 1.050 1.083 3.14
IC/IB =20

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Time
22.2us 23.4us 24.6us 25.8us 27.0us
1 -V1(L2) 2 -V(L1:1)
-10.0V
-7.5V
-5.0V
-2.5V
0V
2.5V
5.0V
7.5V
10.0V
1
-10.0V
-7.5V
-5.0V
-2.5V
0V
2.5V
5.0V
7.5V
10.0V
2
>>
Q1
Q2SA1955FV-B
V1
TD = 5u
TF = 1ns
PW = 20us
PER = 2000us
V1 = 0
TR = 1ns
V2 = -5
R1
1300
0
VCC
-6
R2
790
RL
60
L1
30nH
1 2
L2
30n
1 2
D1
D1FS6
D2
D1FS6
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Comparison table
Test condition: VCC=-6(V),RL=60(Ω), IB1= -IB2=-5(mA)
Parameter Unit Measurement Simulation %Error
tf ns 45.000 45.534 1.19
tstg ns 280.000 281.715 0.61

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V_V1
0V -1.0V -2.0V -3.0V -4.0V -5.0V
IC(Q1)
0A
-100mA
-200mA
-300mA
-400mA
-500mA
V1
0
I1
Q1
Q2SA1955FV-B
Output Characteristics
Simulation result
Evaluation circuit
IB= -0.5 mA
-6
-1
-3
-2
-4-5

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Output Characteristics Reference