The document provides a SPICE model and simulation results for an Insulated Gate Bipolar Transistor (IGBT) manufactured by Hitachi. Key sections include: 1) A SPICE model for the IGBT part number MBN600E45A. 2) Simulation results showing the transfer characteristic, saturation characteristic, output characteristic and switching times match well with manufacturer measurements. 3) Forward conduction and reverse recovery characteristics also show good agreement between simulation and measurements.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: MBN600E45A
MANUFACTURER: HITACHI

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
2
SPICE MODEL
*$
* PART NUMBER: MBN600E45A
* MANUFACTURER: HITACHI
.SUBCKT MBN600E45A C G E
Q_Q1 83 81 85 QOUT
R_RLM LM 0 10MEG
E_E1 C2 C1 VALUE { V(LM)*0.18805*PWR(I(V_VC),0.39653) }
R_RE 83 E 1U
C_CGD 82 1 100n
D_DFWD E C DMBN600E45A
M_S2 2 81 82 82 MNSW
D_DBE 85 81 DE
R_R2 2 81 100MEG
V_VC C C2 0
D_D1 2 81 DGD
M_S1 1 82 81 81 MNSW
R_R1 82 1 100MEG
R_RC C1 85 1U
E_ELM LM 0 TABLE { I(V_VC) }
+ ( (0,0) (0.09,0) (0.1,1) )
D_DDS 83 81 DO
R_RG G 82 5.7
M_M1 81 82 83 83 MFIN
C_CGE 82 83 85.8n
.MODEL DGD D ( CJO=1200p M=.1 VJ=.3905 )
.MODEL MFIN NMOS (LEVEL=3 L=1U W=1U LEVEL=3
+ VTO=6.475 KP=77 THETA=55m )
.MODEL DO D (IS=3.79p)
.MODEL DE D (IS=3.79p N=2)
.MODEL QOUT PNP (IS=3.79p NF=1.00 BF=0.4671
+ XTB=1.3 CJE=0.1n
+ VAF=100 TF=67n )
.MODEL MNSW NMOS Vto=-0.01 KP=100 N=1Meg Rds=1e12
.ENDS
*$
.MODEL DMBN600E45A D
+ IS=11.900E-3 N=7.0116 RS=1.6157E-3 IKF=23.932
+ CJO=0.1E-9 M=.3333 VJ=.3905
+ BV=5850 IBV=12m TT=183n
*$

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
3
Circuit Configuration
IGBT Subcircuit
DO
DDS
DFWD
S1
MNSW
M1
MFIN
Q1
QOUT
RE
1U
E
85
RC
1U
C
RG
{RG}
G
82
CGE
{Cies-Cres}
83
81
C2
C1
DGD
D1
0
R1
100MEG
CGD
100n
1
R2
100MEG
S2
MNSW
2
IN+
IN-
OUT+
OUT-
E1
VC
DE
DBE

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
4
Transfer Characteristic
Circuit Simulation result
Evaluation circuit

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5
Transfer Characteristic Comparison Graph
Simulation result
Comparison table
Test condition: VCE=9 (V)
IC (A)
VGE (V)
%Error
Measurement Simulation
15.5 7.000 7.000 0.00
323.5 9.000 9.004 0.04
942.0 11.000 11.002 0.02

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6
Saturation Characteristic
Circuit Simulation result
Evaluation circuit

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7
Saturation Characteristic Comparison Graph
Simulation result
Comparison table
Test condition: VGE=15 (V)
IC (A)
VCE (V)
%Error
Measurement Simulation
50 1.706 1.715 0.53
100 2.096 2.091 -0.24
200 2.647 2.636 -0.42
500 3.823 3.821 -0.05
1000 5.400 5.425 0.46

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
8
Output Characteristic
Circuit Simulation result
Evaluation circuit
VGE=7V
9V
11V
13V15V

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9
Rise Time Characteristic
Circuit Simulation result
Evaluation circuit
Test condition: VCC=2,600V, IC=600A, L=130nH, RG=3.3, VGE=+/-15V
Parameter Unit Measurement Simulation %Error
tr us 1.600 1.588 -0.75

10. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
10
Fall Time Characteristic
Circuit Simulation result
Evaluation circuit
Test condition: VCC=2,600V, IC=600A, L=130nH, RG=3.3, VGE=+/-15V
Parameter Unit Measurement Simulation %Error
tf us 1.900 1.890 -0.53

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11
FWD Forward Current Characteristic
Circuit Simulation result
Evaluation circuit

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12
FWD Forward Current Characteristic Comparison Graph
Simulation result
Comparison table
IF (A)
VF (V)
%Error
Measurement Simulation
20 1.176 1.453 23.55
50 1.706 1.759 3.11
100 2.024 2.069 2.22
200 2.521 2.475 -1.82
500 3.364 3.290 -2.20
1000 4.310 4.349 0.90

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13
Reverse Recovery Characteristic
Circuit Simulation result
Evaluation circuit
Test condition: VCC=2,600V, IC=600A, L=130nH, RG=3.3, VGE=+/-15V
Parameter Unit Measurement Simulation %Error
trr us 0.600 0.599 -0.17

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14
Appendix A: Switching (tr, tf and trr) test circuit