The document presents a detailed device modeling report for the MOSFET part number TK20J50D from Toshiba, covering parameters such as channel dimensions, resistance, transconductance, and capacitances. It includes simulation results compared with measurements across various characteristics like drain current, gate-source voltage, and switching time, displaying measurement errors. Additionally, the report includes graphical representations of simulations for characteristics such as gate charge and reverse recovery, ensuring comprehensive performance evaluation.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: TK20J50D
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Professional Model)

2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
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MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
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0
10
20
30
0 10 20 30
gfs(S)
Drain current ID (A)
Measurement
Simulation
Transconductance Characteristics
Circuit Simulation Result
Comparison table
Id(A)
gfs (s)
%Error
Measurement Simulation
2 5.600 5.835 4.20
5 8.650 8.909 2.99
10 11.900 12.129 1.92
20 16.200 16.292 0.57
30 19.500 19.214 -1.47

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V1
V2
20
0
V3
0Vdc
U1
TK20J50D
V_V1
0V 2V 4V 6V 8V 10V
I(V3)
0A
10A
20A
30A
40A
50A
Vgs-Id Characteristics
Circuit Simulation result
Evaluation circuit

5. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
5
0
10
20
30
40
50
0 2 4 6 8 10
DraincurrentID(A)
Gate-source voltage VGS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
ID(A)
VGS(V)
%Error
Measurement Simulation
1 5.050 5.222 3.40
2 5.350 5.421 1.32
5 5.900 5.826 -1.26
10 6.350 6.300 -0.79
20 7.000 7.001 0.01
30 7.500 7.563 0.85
40 7.950 8.054 1.31
50 8.350 8.499 1.78

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0
V3
0Vdc
VDS
V1
10
U1
TK20J50D
V_VDS
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V 2.0V
I(V3)
0A
1A
2A
3A
4A
5A
6A
7A
8A
9A
10A
Rds(on) Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
ID = 10A, VGS = 10V Measurement Simulation %Error
RDS (on)  0.220 0.220 0.00

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VDD
400
I1TD = 0
TF = 5n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 5n -
+
W1
ION = 0uA
IOFF = 1mA
W
I2
20
0
D2
DbreakU1
TK20J50D
Time*1mA
0 20n 40n 60n 80n
V(W1:3)
0V
4V
8V
12V
16V
Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=400V, ID=20A,
VGS=10V
Measurement Simulation %Error
Qgs nC 13.000 12.662 -2.60
Qgd nC 19.000 18.390 -3.21
Qg nC 47.000 47.975 2.07

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Capacitance Characteristics
Simulation Result
VDS (V)
Cbd (pF)
%Error
Measurement Simulation
0.5 3400.000 3325.000 -2.21
1 2980.000 3004.000 0.81
2 2430.000 2484.000 2.22
5 1530.000 1520.000 -0.65
10 825.000 802.600 -2.72
20 312.000 324.000 3.85
Simulation
Measurement

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U1
TK20J50D
0
VDD
200Vdc
V2
TD = 1u
TF = 5n
PW = 10u
PER = 20u
V1 = 0
TR = 5n
V2 = 20
L2
50nH
R2
50
R1
50
L1
30nH
RL
20
Time
0.5us 0.7us 0.9us 1.1us 1.3us 1.5us 1.7us
V(U1:G) V(U1:D)/20
0V
2V
4V
6V
8V
10V
12V
14V
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=10A, VDD=200V
VGS=10/0V
Measurement Simulation %Error
ton ns 100.000 100.131 0.13

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V2
0V1
0
0
V3
0Vdc
U1
TK20J50D
V_V2
0V 10V 20V 30V 40V 50V
I(V3)
0A
10A
20A
30A
40A
50A
Output Characteristics
Circuit Simulation result
Evaluation circuit
VGS=6V
8
7
7.5
6.5
10

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VDS
0
Vsense
0Vdc
U1
TK20J50D
V_VDS
0V -0.3V -0.6V -0.9V -1.2V -1.5V
I(Vsense)
100mA
1.0A
10A
100A
Forward Current Characteristics
Circuit Simulation Result
Evaluation Circuit

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0.1
1
10
100
0 0.3 0.6 0.9 1.2 1.5
DrianreversecurrentIDR(A)
Drain - source voltage-VDS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
IDR(A)
-VDS(V)
%Error
Measurement Simulation
0.1 0.590 0.5882 -0.30
0.2 0.620 0.6159 -0.67
0.5 0.655 0.6547 -0.05
1 0.685 0.6877 0.39
2 0.725 0.7272 0.31
5 0.795 0.7990 0.51
10 0.880 0.8784 -0.19
20 0.995 0.9937 -0.14
50 1.260 1.2562 -0.30
70 1.400 1.4107 0.76

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V1
TD = 1us
TF = 20ns
PW = 20us
PER = 50us
V1 = -9.40v
TR = 10ns
V2 = 10.65v
R1
50
0
U1
DTK20J50D_P
Time
8us 12us 16us 20us 24us 28us 32us 36us 40us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristics
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj us 0.420 0.421 0.24
trb us 1.280 1.300 1.56
trr us 1.700 1.721 1.24

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Reverse Recovery Characteristics Reference
Trj = 0.42 (us)
Trb = 1.28(us)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Relation between trj and trb
Example
Measurement