The document provides a detailed device modeling report for the 2SC1959 bipolar junction transistor manufactured by Toshiba. It outlines various parameters and characteristics including forward and reverse beta, saturation current, emission coefficients, and capacitance characteristics, along with corresponding simulation results and error measurements. The report includes copyright information and is the intellectual property of Bee Technologies Inc.

1. Device Modeling Report
COMPONENTS:BIPOLAR JUNCTION TRANSISTOR
PART NUMBER:2SC1959
MANUFACTURER:TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

2. Pspice
model Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

6. C-B Capacitance Characteristic
Measurement
Simulation
E-B Capacitance Characteristic
Measurement
Simulation
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

7. BJT Ic-hFE characteristics
Circuit simulation result
Evaluation circuit
Q2
Q2SC1959
6Vdc V1
I1
400mAdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

8. Comparison Graph
Circuit simulation result
Simulation result
hFE
Ic(A) %Error
Measurement Simulation
0.01 161.93 161.32 0.376705984
0.02 159.74 160.124 0.240390635
0.05 156.28 156.909 0.402482723
0.1 152.67 152.513 0.102836183
0.2 146.52 145.87 0.443625444
0.5 134.05 133.674 0.280492354
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

9. BJT Vce(sat) voltage Characteristics
Circuit simulation result
Evaluation circuit
I2
100mAdc
Q1
Q2SC1959
I1
10mAdc
0
Simulation result
Test condition: IC/IB = 10, IC=100mA
Vce(sat)(V)
Measurement Simulation Error(%)
100m 100m 0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

10. Output Characteristics
Circuit simulation result
IB=1500uA
IB=1000uA
IB=500uA
IB=0
Evaluation circuit
Q1
Q2SC1959
10Vdc V1
I1
0Adc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004