SPICE MODEL of 2SK2615 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: 2SK2615
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Model Parameters) /
ESD Protection Diode

2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
2
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
3
0
1
2
3
4
5
0.0 1.0 2.0 3.0 4.0 5.0
gfs
Drain Current ID (A)
Measurement
Simulation
Transconductance Characteristic
Circuit Simulation Result
Comparison table
Id(A)
gfs
Error (%)
Measurement Simulation
0.5 1.410 1.351 -4.18
1 1.950 1.899 -2.62
2 2.700 2.665 -1.30
5 4.050 4.150 2.47

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V_V1
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V3)
0A
1.0A
2.0A
3.0A
4.0A
5.0A
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit
V1
0Vdc
V2
10
0
V3
0Vdc
U1
2SK2615

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5
Comparison Graph
Circuit Simulation Result
Simulation Result
ID(A)
VGS(V)
Error (%)
Measurement Simulation
0.5 2.4 2.412 0.50
1 2.7 2.72 0.74
2 3.15 3.158 0.25
5 4.1 4.037 -1.54

6. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
6
0
V3
0Vdc
VDS
0Vdc
V1
10
U1
2SK2615
V_VDS
0V 100mV 200mV 250mV
I(V3)
0A
0.1A
0.2A
0.3A
0.4A
0.5A
0.6A
0.7A
0.8A
0.9A
1.0A
Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID = 1A, VGS = 10V Measurement Simulation Error (%)
RDS (on)  0.230 0.230 0.00

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Time*1mA
0 2n 4n 6n 8n 10n
V(W1:3)
0V
10V
20V
VDD
48
I1TD = 0
TF = 5n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 5n
-
+
W1
ION = 0uA
IOFF = 1mA
W
I2
2
0
D2
Dbreak
U1
2SK2615
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=48V, ID=2A,
VGS=10V
Measurement Simulation Error (%)
Qgs nC 0.575 0.574 -0.17
Qgd nC 1.400 1.409 0.64
Qg nC 6.000 3.663 -38.95

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Capacitance Characteristic
Simulation Result
VDS (V)
Cbd (pF)
Error (%)
Measurement Simulation
0.100 150.000 149.530 -0.31
0.200 142.000 142.240 0.17
0.500 125.000 125.672 0.54
1.000 108.000 107.880 -0.11
2.000 88.000 87.760 -0.27
5.000 63.000 62.560 -0.70
10.000 47.000 46.903 -0.21
20.000 34.000 34.635 1.87
50.000 23.000 22.923 -0.33
Simulation
Measurement

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Time
0.6us 0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us 1.4us
V(U1:G) V(U1:D)/3.05
0V
2V
4V
6V
8V
10V
12V
14V
0
VDD
30.5Vdc
V2
TD = 1u
TF = 5n
PW = 10u
PER = 20u
V1 = 0
TR = 5n
V2 = 20
U1
2SK2615
L2
50nH
R2
50
R1
50
L1
30nH
RL
30
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=1A, VDD=30V
VGS=0/10V
Measurement Simulation Error (%)
ton ns 30.000 29.806 -0.65

10. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
10
V_V2
0V 2V 4V 6V 8V 10V
I(V3)
0A
1.0A
2.0A
3.0A
4.0A
5.0A
Output Characteristic
Circuit Simulation result
Evaluation circuit
VGS=2.5V
6
3.0
3.5
10, 8
V2
10V1
0
0
V3
0Vdc
U1
2SK2615
3.75
4
5

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11
V_V1
0V 0.4V 0.8V 1.2V 1.6V 2.0V 2.4V
I(Vsense)
100mA
1.0A
10A
V1
0
Vsense
0Vdc
U1
2SK2615
Forward Current Characteristic
Circuit Simulation Result
Evaluation circuit

12. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
12
Comparison Graph
Circuit Simulation Result
Simulation Result
IDR(A)
VSD(V)
%Error
Measurement Simulation
0.1 0.6750 0.6775 0.37
0.2 0.7200 0.7163 -0.51
0.5 0.7900 0.7874 -0.33
1 0.8700 0.8729 0.33
2 1.0100 1.0153 0.52
5 1.4000 1.3849 -1.08
6 1.4900 1.5006 0.71

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Time
19.6us 19.8us 20.0us 20.2us 20.4us 20.6us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristics
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Characteristic Unit Measurement Simulation Error (%)
trj ns 20.000 20.033 0.17
V1
TD = 90ns
TF = 10ns
PW = 20us
PER = 50us
V1 = -9.45v
TR = 10ns
V2 = 10.65v
R1
50
0
U1
2SK2615

14. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
14
Reverse Recovery Characteristic Reference
Trj=20(ns)
Trb=24(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
Measurement

15. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
15
V_V1
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
0A
1mA
2mA
3mA
4mA
5mA
6mA
7mA
8mA
9mA
10mA
ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
Evaluation Circuit
R1
0.001m
V1
0Vdc
0
U1
2SK2615R2
100MEG

16. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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Zener Voltage Characteristic Reference