This document provides a summary of simulation results for the modeling and characterization of a TOSHIBA 2SJ668 power MOSFET and its internal body and ESD protection diodes. The simulations match measurement data with low error percentages for key transistor parameters and diode characteristics like transconductance, drain current, gate charge, switching time and reverse recovery time. Circuit simulations were performed to extract the MOSFET and diode models for use in circuit design and analysis.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Power MOSFET (Model Parameters)
PART NUMBER: 2SJ668
MANUFACTURER: TOSHIBA
Body Diode (Model Parameters) / ESD Protection Diode

2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
2
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
3
0
4
8
12
0 2 4 6 8 10
Transconductancegfs(S)
Drain current: -ID (A)
Measurement
Simulation
Transconductance Characteristics
Circuit Simulation Result
Comparison table
-Id(A)
gfs (S)
%Error
Measurement Simulation
0.2 1.680 1.734 3.21
0.5 2.650 2.714 2.42
1 3.720 3.796 2.04
2 5.166 5.286 2.32
5 8.070 8.108 0.47
10 10.870 11.095 2.07

4. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
4
V1
0Vdc
V2
-10
0
V3
0Vdc
U1
2SJ668
V_V1
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
0A
-2A
-4A
-6A
-8A
-10A
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit

5. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
5
0
2
4
6
8
10
0 1 2 3 4 5
DrainCurrent:-ID(A)
Gate−source voltage: -VGS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
-ID (A)
-VGS (V)
Error (%)
Measurement Simulation
0.2 2.180 2.204 1.10
0.5 2.320 2.339 0.82
1.0 2.475 2.493 0.73
2.0 2.705 2.713 0.29
5.0 3.175 3.159 -0.50
10.0 3.750 3.678 -1.92

6. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
6
0
V3
0Vdc
VDS
0Vdc
V1
-10
U1
2SJ668
V_VDS
0V -50mV -100mV -150mV -200mV -250mV
I(V3)
0A
-0.5A
-1.0A
-1.5A
-2.0A
-2.5A
Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=-2.5A,
VGS=-10V
Unit Measurement Simulation %Error
RDS (on)  0.120 0.120 0.00

7. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
7
Time*1mA
0 5n 10n 15n 20n 25n 30n
V(W1:4)
0V
-5V
-10V
-15V
-20V
-25V
VDD
-48
I1TD = 0
TF = 5n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 5n -
+
W1
ION = 0uA
IOFF = 1mA
W
I2
5
0
D2
Dbreak
U1
2SJ668
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=-48V, ID=-5A
, VGS=-10V
Unit Measurement Simulation %Error
Qgs nC 2.200 2.202 0.09
Qgd nC 3.400 3.394 -0.18
Qg nC 14.400 11.750 -18.40

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Capacitance Characteristic
Simulation Result
-VDS(V)
Cbd(pF)
%Error
Measurement Simulation
0.1 150.000 152.000 1.33
0.2 138.000 139.800 1.30
0.5 113.000 114.500 1.33
1.0 89.000 90.200 1.35
2.0 65.500 66.400 1.37
5.0 41.500 42.100 1.45
10.0 29.500 30.000 1.69
20.0 20.000 20.100 0.50
40.0 14.000 13.800 -1.43
60.0 12.000 11.700 -2.50
Simulation
Measurement

9. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
9
Time
0.92us 0.96us 1.00us 1.04us 1.08us 1.12us
V(U1:G) V(U1:D)/3
2V
0V
-2V
-4V
-6V
-8V
-10V
-12V
-14V
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
ID= -2.5A, VDD= -30V
VGS=0/-10V
Unit Measurement Simulation %Error
ton ns 24.000 24.037 0.15
0
VDD
-30.4Vdc
V2
TD = 1u
TF = 5n
PW = 10u
PER = 1m
V1 = 0
TR = 5n
V2 = 20
U1
2SJ668
L2
50nH
R2
4.7
R1
4.7
L1
30nH
RL
12

10. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
10
V2
-10V1
0
0
V3
0Vdc
U1
2SJ668
V_V2
0V -0.4V -0.8V -1.2V -1.6V -2.0V
I(V3)
0A
-1.0A
-2.0A
-3.0A
-4.0A
-5.0A
Output Characteristic
Circuit Simulation result
Evaluation circuit
VGS= -2.5V
-3
-4
-10
-4
-8
-6 -3.5
-2.8

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11
VSD
0
U1
2SJ668
Vsense
0Vdc
V_VSD
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(Vsense)
100mA
1.0A
10A
BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit

12. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
12
0.1
1
10
0 0.2 0.4 0.6 0.8 1 1.2
DrainreversecurrentIDR(A)
Drain−source voltage VDS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
IDR (A)
VDS (V)
%Error
Measurement Simulation
0.10 0.673 0.673 -0.06
0.20 0.700 0.701 0.07
0.50 0.743 0.743 0.01
1.00 0.785 0.785 -0.03
2.00 0.845 0.844 -0.11
5.00 0.980 0.981 0.09
10.00 1.180 1.180 -0.03

13. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
13
Time
9.84us 9.92us 10.00us 10.08us 10.16us 10.24us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristics
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 9.600 9.623 0.24
V1
TD = 0us
TF = 10ns
PW = 10us
PER = 100us
V1 = -9.4v
TR = 10ns
V2 = 10.6v
R1
50
0
U1
2SJ668

14. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
14
Reverse Recovery Characteristic Reference
Trj= 9.60 (ns)
Trb= 10.00 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
Measurement

15. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
15
V_V1
0V -10V -20V -30V -40V -50V
I(R1)
0A
-2mA
-4mA
-6mA
-8mA
-10mA
R1
0.001mV1
0Vdc
0
U1
2SJ668
R2
100MEG
ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristics
Circuit Simulation Result
Evaluation Circuit

16. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
16
Zener Voltage Characteristic Reference