The document is a device modeling report for a MOSFET (part number SCT2080KE) by Bee Technologies Inc., detailing model parameters and simulation results. It includes comparisons of measured and simulated characteristics such as transconductance, output characteristics, and gate charge, with %errors indicated. The document provides insights on performance metrics under various electrical conditions and summarizes findings on forward and reverse recovery characteristics.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: SCT2080KE
MANUFACTURER: ROHM
REMARK: Body Diode (Model Parameters)

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
2
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
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Transconductance Characteristics
Circuit Simulation result
Comparison table
ID (A)
gfs (S)
%Error
Measurement Simulation
1 1.273 1.225 -3.77
2 1.817 1.748 -3.80
5 2.920 2.812 -3.70
10 4.161 4.055 -2.55
20 5.919 5.897 -0.37
VDS=10V

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V_VGS
0V 2V 4V 6V 8V 10V 12V 14V 16V 18V 20V
I(U1:2)
100mA
1.0A
10A
100A
VGS
VDS
10V
0
U1
SCT2080KE
Vgs-Id Characteristics
Circuit Simulation result
Evaluation circuit

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
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Comparison Graph
Circuit Simulation result
Comparison table
ID (A)
VGS (V)
%Error
Measurement Simulation
0.1 4.235 4.445 4.96
0.2 4.540 4.662 2.69
0.5 5.185 5.089 -1.85
1 5.857 5.569 -4.91
2 6.571 6.243 -4.99
5 7.950 7.561 -4.89
10 9.350 9.020 -3.53
20 11.350 11.034 -2.78
45 14.425 14.355 -0.49
VDS=10V

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
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VGS
18V
0
VDS
U1
SCT2080KE
V_VDS
0V 100mV 200mV 300mV 400mV 500mV 600mV 700mV 800mV
I(U1:2)
0A
1A
2A
3A
4A
5A
6A
7A
8A
9A
10A
Rds(on) Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VGS=18(V), ID=10(A)
Parameter Unit Measurement Simulation %Error
RDS(on) Ω 0.080 0.084 4.75

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
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V_VDS
0V 2V 4V 6V 8V 10V
I(U1:2)
0A
5A
10A
15A
20A
25A
30A
35A
40A
VGS
0
VDS
U1
SCT2080KE
Output Characteristics
Circuit Simulation result
Evaluation circuit
VGS = 10V
VGS = 12V
VGS = 20V
VGS = 18V
VGS = 16V
VGS = 14V

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
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Capacitance Characteristics
Simulation result
Comparison table
VDS (V)
Cbd (pF)
%Error
Measurement Simulation
0.1 1010.000 1020.000 0.99
0.2 990.000 995.000 0.51
0.5 930.000 924.500 -0.59
1 890.000 847.000 -4.83
2 690.000 717.000 3.91
5 545.000 543.000 -0.37
10 410.000 407.000 -0.73
20 312.000 309.200 -0.90
50 203.000 203.500 0.25
100 147.000 146.800 -0.14
200 109.000 105.600 -3.12
500 67.000 68.100 1.64
900 54.000 51.600 -4.44
Simulation
Measurement

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Time*1mA
0 20n 40n 60n 80n 100n 120n
V(W1:3)
0V
5V
10V
15V
20V
D1
dmod
U1
SCT2080KE ID
10A
VDD
400V
0
-
+
W1
ION = 0
IOFF = 1mA
WIGTD = 0
TF = 10n
PW = 10m
PER = 1
I1 = 0
I2 = 1m
TR = 10n
Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=400(V), VGS=18(V), ID=10(A)
Parameter Unit Measurement Simulation %Error
Qgs nC 27.000 26.856 -0.53
Qgd nC 31.000 31.001 0.00
Qg nC 106.000 84.834 -19.97

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Time
1.8us 1.9us 2.0us 2.1us 2.2us 2.3us
V(U1:2)/40 V(U1:1)/1.8
0V
2.5V
5.0V
7.5V
10.0V
12.5V
15.0V
L1
30nH
1 2
Rg
1u
U1
SCT2080KE
V1TD = 2u
TF = 4n
PW = 5u
PER = 500u
V1 = 0
TR = 4n
V2 = 18
VDD
400
0
RL
40
L2
50nH
12
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=400(V), VGS=0/18(V), ID=10(A), RG=0
Parameter Unit Measurement Simulation %Error
ton ns 71.000 70.919 -0.11

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V_VSD
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V 7.0V 8.0V
I(S)
10mA
100mA
1.0A
10A
100A
0
VSD
U1
SCT2080KE
S
Body Diode Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

12. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
12
Comparison Graph
Simulation result
Comparison table
IS (A)
VSD (V)
%Error
Measurement Simulation
0.01 1.419 1.486 4.72
0.02 1.520 1.582 4.08
0.05 1.670 1.735 3.89
0.1 1.805 1.876 3.93
0.2 1.962 2.039 3.92
0.5 2.200 2.283 3.77
1 2.400 2.506 4.42
2 2.770 2.793 0.83
5 3.571 3.395 -4.93
10 4.401 4.197 -4.64
20 5.700 5.526 -3.05
25 6.175 6.154 -0.34

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Time
9.6us 9.8us 10.0us 10.2us 10.4us 10.6us
I(R1)
-4A
-2A
0A
2A
4A
6A
8A
10A
12A
0
V1TD = 0ns
TF = 84ns
PW = 10us
PER = 1000us
V1 = -100V
TR = 1ns
V2 = 400V
R1
39.5
U1
SCT2080KE
Reverse Recovery Characteristics
Circuit Simulation result
Evaluation circuit
Comparison Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
Irrm A 2.300 2.298 -0.07
trr ns 31.000 42.536 37.21