SPICE MODEL of SCT2080KE (Standard+BDS Model) in SPICE PARK
•
0 likes•1,275 views
SPICE MODEL of SCT2080KE (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
Recommended
More Related Content
What's hot
What's hot (18)
Viewers also liked
Viewers also liked (10)
Similar to SPICE MODEL of SCT2080KE (Standard+BDS Model) in SPICE PARK
Similar to SPICE MODEL of SCT2080KE (Standard+BDS Model) in SPICE PARK (20)
More from Tsuyoshi Horigome
More from Tsuyoshi Horigome (20)
Recently uploaded
Recently uploaded (20)
SPICE MODEL of SCT2080KE (Standard+BDS Model) in SPICE PARK
- 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: MOSFET (Model Parameters) PART NUMBER: SCT2080KE MANUFACTURER: ROHM REMARK: Body Diode (Model Parameters)
- 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 2 MOSFET MODEL PSpice model parameter Model description LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility
- 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 3 Transconductance Characteristics Circuit Simulation result Comparison table ID (A) gfs (S) %Error Measurement Simulation 1 1.273 1.225 -3.77 2 1.817 1.748 -3.80 5 2.920 2.812 -3.70 10 4.161 4.055 -2.55 20 5.919 5.897 -0.37 VDS=10V
- 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 4 V_VGS 0V 2V 4V 6V 8V 10V 12V 14V 16V 18V 20V I(U1:2) 100mA 1.0A 10A 100A VGS VDS 10V 0 U1 SCT2080KE Vgs-Id Characteristics Circuit Simulation result Evaluation circuit
- 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 5 Comparison Graph Circuit Simulation result Comparison table ID (A) VGS (V) %Error Measurement Simulation 0.1 4.235 4.445 4.96 0.2 4.540 4.662 2.69 0.5 5.185 5.089 -1.85 1 5.857 5.569 -4.91 2 6.571 6.243 -4.99 5 7.950 7.561 -4.89 10 9.350 9.020 -3.53 20 11.350 11.034 -2.78 45 14.425 14.355 -0.49 VDS=10V
- 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 6 VGS 18V 0 VDS U1 SCT2080KE V_VDS 0V 100mV 200mV 300mV 400mV 500mV 600mV 700mV 800mV I(U1:2) 0A 1A 2A 3A 4A 5A 6A 7A 8A 9A 10A Rds(on) Characteristics Circuit Simulation result Evaluation circuit Test condition: VGS=18(V), ID=10(A) Parameter Unit Measurement Simulation %Error RDS(on) Ω 0.080 0.084 4.75
- 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 7 V_VDS 0V 2V 4V 6V 8V 10V I(U1:2) 0A 5A 10A 15A 20A 25A 30A 35A 40A VGS 0 VDS U1 SCT2080KE Output Characteristics Circuit Simulation result Evaluation circuit VGS = 10V VGS = 12V VGS = 20V VGS = 18V VGS = 16V VGS = 14V
- 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 8 Capacitance Characteristics Simulation result Comparison table VDS (V) Cbd (pF) %Error Measurement Simulation 0.1 1010.000 1020.000 0.99 0.2 990.000 995.000 0.51 0.5 930.000 924.500 -0.59 1 890.000 847.000 -4.83 2 690.000 717.000 3.91 5 545.000 543.000 -0.37 10 410.000 407.000 -0.73 20 312.000 309.200 -0.90 50 203.000 203.500 0.25 100 147.000 146.800 -0.14 200 109.000 105.600 -3.12 500 67.000 68.100 1.64 900 54.000 51.600 -4.44 Simulation Measurement
- 9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 9 Time*1mA 0 20n 40n 60n 80n 100n 120n V(W1:3) 0V 5V 10V 15V 20V D1 dmod U1 SCT2080KE ID 10A VDD 400V 0 - + W1 ION = 0 IOFF = 1mA WIGTD = 0 TF = 10n PW = 10m PER = 1 I1 = 0 I2 = 1m TR = 10n Gate Charge Characteristics Circuit Simulation result Evaluation circuit Test condition: VDD=400(V), VGS=18(V), ID=10(A) Parameter Unit Measurement Simulation %Error Qgs nC 27.000 26.856 -0.53 Qgd nC 31.000 31.001 0.00 Qg nC 106.000 84.834 -19.97
- 10. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 10 Time 1.8us 1.9us 2.0us 2.1us 2.2us 2.3us V(U1:2)/40 V(U1:1)/1.8 0V 2.5V 5.0V 7.5V 10.0V 12.5V 15.0V L1 30nH 1 2 Rg 1u U1 SCT2080KE V1TD = 2u TF = 4n PW = 5u PER = 500u V1 = 0 TR = 4n V2 = 18 VDD 400 0 RL 40 L2 50nH 12 Switching Time Characteristics Circuit Simulation result Evaluation circuit Test condition: VDD=400(V), VGS=0/18(V), ID=10(A), RG=0 Parameter Unit Measurement Simulation %Error ton ns 71.000 70.919 -0.11
- 11. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 11 V_VSD 0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V 7.0V 8.0V I(S) 10mA 100mA 1.0A 10A 100A 0 VSD U1 SCT2080KE S Body Diode Forward Current Characteristics Circuit Simulation result Evaluation circuit
- 12. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 12 Comparison Graph Simulation result Comparison table IS (A) VSD (V) %Error Measurement Simulation 0.01 1.419 1.486 4.72 0.02 1.520 1.582 4.08 0.05 1.670 1.735 3.89 0.1 1.805 1.876 3.93 0.2 1.962 2.039 3.92 0.5 2.200 2.283 3.77 1 2.400 2.506 4.42 2 2.770 2.793 0.83 5 3.571 3.395 -4.93 10 4.401 4.197 -4.64 20 5.700 5.526 -3.05 25 6.175 6.154 -0.34
- 13. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 13 Time 9.6us 9.8us 10.0us 10.2us 10.4us 10.6us I(R1) -4A -2A 0A 2A 4A 6A 8A 10A 12A 0 V1TD = 0ns TF = 84ns PW = 10us PER = 1000us V1 = -100V TR = 1ns V2 = 400V R1 39.5 U1 SCT2080KE Reverse Recovery Characteristics Circuit Simulation result Evaluation circuit Comparison Measurement vs. Simulation Parameter Unit Measurement Simulation %Error Irrm A 2.300 2.298 -0.07 trr ns 31.000 42.536 37.21