S5295G PSpice Model (Free SPICE Model)

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: S5295G
MANUFACTURER: TOSHIBA
Device Modeling Report
Bee Technologies Inc.

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
SPICE MODEL
PSpice model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
*$
* PART NUMBER: S5295G
* MANUFACTURER: TOSHIBA
* All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
.MODEL S5295G D
+ IS=7.5609E-9
+ N=1.7654
+ RS=37.568E-3
+ IKF=628.02
+ ISR=0
+ CJO=33.464E-12
+ M=.35355
+ VJ=.65874
+ BV=300
+ IBV=10.000E-6
+ TT=634.79E-9
*$

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
V1
0Vdc
R1
0.01m
D1 S5295G
0
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph
Circuit Simulation Result
Simulation Result
Ifwd(A)
Vfwd(V)
Measurement
Vfwd(V)
Simulation
%Error
0.01 0.640 0.644 -0.609
0.02 0.675 0.676 -0.163
0.05 0.722 0.719 0.429
0.1 0.750 0.752 -0.320
0.2 0.788 0.789 -0.102
0.5 0.850 0.841 1.059
1 0.900 0.891 1.000
2 0.958 0.961 -0.282
5 1.096 1.115 -1.770
10 1.344 1.334 0.751

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
V2
0Vdc
D1 S5295G
V1
TD = 0
TF = 10ns
PW = 20us
PER = 50us
V1 = 0
TR = 10ns
V2 = 300
0
Junction Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph
Circuit Simulation Result
Simulation Result
Vrev(V)
Cj(pF)
Measurement
Cj(pF)
Simulation
%Error
0 33.743 33.743 0.000
0.1 31.722 32.242 -1.639
0.2 30.298 30.769 -1.555
0.5 27.184 27.588 -1.486
1 24.135 24.238 -0.427
2 20.581 20.503 0.379
5 15.931 15.656 1.726
10 12.581 12.504 0.612
20 9.744 9.897 -1.567
50 7.112 7.212 -1.412
100 5.058 5.280 -4.407

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
0
V1
TD = 0
TF = 10ns
PW = 20us
PER = 50us
V1 = -9.20V
TR = 10ns
V2 = 10.8V
R1
50
D1 S5295G
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation %Error
trr 440.00 ns 445.50 ns 1.25

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Reverse Recovery Characteristic Reference
Trj =76(ns)
Trb=364(ns)
Conditions: Ifwd=0.2(A),Irev=0.2(A), Rl=50
Example
Relation between trj and trb
Measurement