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SSM3K15AMFV (professional Model) PSpice Model (Free SPICE Model)
This document provides a device modeling report for a MOSFET (SSM3K15AMFV) manufactured by Toshiba. It includes the SPICE model parameters for the MOSFET and its internal body diode. Simulation results show characteristics such as transconductance, output curves, gate charge, switching times and reverse recovery matching measurements. The report also details the SPICE subcircuit models used to simulate the MOSFET and diode.
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SSM3K15AMFV (professional Model) PSpice Model (Free SPICE Model)
- 1. All Rights ReservedCopyright (C) Bee Technologies Inc. 2011 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: MOSFET (Professional Model) PART NUMBER: SSM3K15AMFV MANUFACTURER: TOSHIBA REMARK: Body Diode (Professional Model)
- 2. All Rights ReservedCopyright (C) Bee Technologies Inc. 2011 2 U1 SSM3K15AMFV SPICE MODEL Circuit Configuration *$ *PART NUMBER: SSM3K15AMFV *MANUFACTURER: TOSHIBA *VDS=30V, ID=100mA *All Rights Reserved Copyright (c) Bee Technologies Inc.2011 .SUBCKT SSM3K15AMFV 1 2 3 X_U1 3 1 2 MSSM3K15AMFV_p X_U2 2 3 DSSM3K15AMFV_p X_U3 1 2 DZSSM3K15AMFV .ENDS *$
- 3. All Rights ReservedCopyright (C) Bee Technologies Inc. 2011 3 S DGD G R2 10MEGR1 10M CGD + - + - S1 S D Q1 + - + - S2 S POWER MOSFET SPICE MODEL Equivalent Circuit *$ .SUBCKT MSSM3K15AMFV_p D G S CGD 1 G 72.5p R1 1 G 10MEG S1 1 D G D SMOD1 D1 2 D DGD R2 D 2 10MEG S2 2 G D G SMOD1 M1 D G S S MSSM3K15AMFV .MODEL SMOD1 VSWITCH (VON=0V VOFF=-10mV RON=1m ROFF=1E12) .MODEL DGD D (CJO=13.910E-12 M=.47978 VJ=.75574) .MODEL MSSM3K15AMFV NMOS + LEVEL=3 L=1.0000E-6 W=1.0000E-6 KP=.23 + RS=1.0000E-6 RD=.7 VTO=1.2805 RDS=30.000E6 + TOX=100.00E-9 CGSO=27E-6 CGDO=5.5E-6 + CBD=16.831E-12 MJ=.44871 PB=.75554 RG=22 + IS=1.0000E-15 N=5 RB=1 GAMMA=0 KAPPA=0 ETA=0 .ENDS *$
- 4. All Rights ReservedCopyright (C) Bee Technologies Inc. 2011 4 MOSFET MODEL PSpice model parameter Model description LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility
- 5. All Rights ReservedCopyright (C) Bee Technologies Inc. 2011 5 Transconductance Characteristics Circuit Simulation result Comparison table ID (mA) gfs (S) %Error Measurement Simulation 5 46.700 47.897 2.56 10 68.000 67.774 -0.33 20 96.000 95.884 -0.12 50 152.000 151.640 -0.24 100 212.000 214.461 1.16 VDS=3V
- 6. All Rights ReservedCopyright (C) Bee Technologies Inc. 2011 6 V_VGS 0V 1.0V 2.0V 3.0V 4.0V -I(VDS) 1.0mA 10mA 100mA 1.0A 0 U1 SSM3K15AMFV VGS VDS 3V Vgs-Id Characteristics Circuit Simulation result Evaluation circuit
- 7. All Rights ReservedCopyright (C) Bee Technologies Inc. 2011 7 Comparison Graph Circuit Simulation result Comparison table ID (mA) VGS (V) %Error Measurement Simulation 1 1.369 1.373 0.29 2 1.423 1.412 -0.77 5 1.518 1.489 -1.91 10 1.605 1.575 -1.87 20 1.710 1.697 -0.76 50 1.918 1.939 1.09 100 2.200 2.213 0.59 200 2.600 2.599 -0.04 VDS=3V
- 8. All Rights ReservedCopyright (C) Bee Technologies Inc. 2011 8 VGS 4V VDS U1 SSM3K15AMFV 0 V_VDS 0V 4mV 8mV 12mV 16mV 20mV 24mV -I(VDS) 0A 2mA 4mA 6mA 8mA 10mA Rds(on) Characteristics Circuit Simulation result Evaluation circuit Test condition: VGS=4(V), ID=10(mA) Parameter Unit Measurement Simulation %Error RDS(on) Ω 2.300 2.304 0.17
- 9. All Rights ReservedCopyright (C) Bee Technologies Inc. 2011 9 V_VDS 0V 0.2V 0.4V 0.6V 0.8V 1.0V -I(VDS) 0A 100mA 200mA 300mA 400mA U1 SSM3K15AMFV VGS 0 VDS Output Characteristics Circuit Simulation result Evaluation circuit VGS=2.1V 2.3V 2.5V 2.7V 4 V10V 3V
- 10. All Rights ReservedCopyright (C) Bee Technologies Inc. 2011 10 Capacitance Characteristics Simulation result Comparison table VDS (V) Cbd (pF) %Error Measurement Simulation 0.5 2.500 2.480 -0.80 1 2.200 2.210 0.45 2 1.900 1.880 -1.05 5 1.500 1.470 -2.00 10 1.200 1.195 -0.42 20 0.900 0.950 5.56 Simulation Measurement
- 11. All Rights ReservedCopyright (C) Bee Technologies Inc. 2011 11 Time*1m 0s 0.1ns 0.2ns 0.3ns 0.4ns 0.5ns 0.6ns 0.7ns 0.8ns 0.9ns V(W1:3) 0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V 7.0V 8.0V IGTD = 0 TF = 10n PW = 10m PER = 1 I1 = 0 I2 = 1m TR = 10n 0 U1 SSM3K15AMFV D1 DMOD - + W1 ION = 0 IOFF = 100uA W ID 100mA VDD 24V Gate Charge Characteristics Circuit Simulation result Evaluation circuit Test condition: VDD=24(V), VGS=4(V), ID=100(mA) Parameter Unit Measurement Simulation %Error Qgs nC 87.00 86.37 -0.72 Qgd nC 334.00 334.64 0.19 Qg nC 650.00 649.00 -0.15
- 12. All Rights ReservedCopyright (C) Bee Technologies Inc. 2011 12 Time 1.96us 1.97us 1.98us 1.99us 2.00us 2.01us 2.02us 2.03us 2.04us 2.05us V(U1:3) V(R1:1) -2V -1V 0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V G D V1TD = 2u TF = 1n PW = 1u PER = 100u V1 = 0 TR = 1n V2 = 5 VDD 5 0 RL 500 L2 30nH 12 L1 30nH 12 R1 50 U1 SSM3K15AMFV Switching Time Characteristics Circuit Simulation result Evaluation circuit Test condition: VDD=5(V), VGS=5(V), ID=10(mA) Parameter Unit Measurement Simulation %Error ton ns 5.500 5.64 2.55
- 13. All Rights ReservedCopyright (C) Bee Technologies Inc. 2011 13 U1 DSSM3K15AMFV_P C1 100p K D1 R1 1 F1 F G1 {V(N00091,N00063)-V(N00022,N00019)} GVALUE OUT+ OUT- IN+ IN- D2 R2 300 - + + - E1 E + - + - S1 S VON = 100mV VOFF = 90mV ROFF = 50MEG RON = 1m 0 A BODY DIODE SPICE MODEL Equivalent Circuit Circuit Configuration *$ .SUBCKT DSSM3K15AMFV_p A K R_R2 5 6 100 R_R1 3 4 1 C_C1 5 6 53p E_E1 5 K 3 4 1 S_S1 6 K 4 K _S1 RS_S1 4 K 1G .MODEL _S1 VSWITCH Roff=50MEG Ron=100m Voff=90mV Von=120mV G_G1 K A VALUE { V(3,4)-V(5,6) } D_D1 2 K DSSM3K15AMFV D_D2 4 K DSSM3K15AMFV F_F1 K 3 VF_F1 1 VF_F1 A 2 0V .MODEL DSSM3K15AMFV D + IS=19.600E-15 N=1.0414 RS=.69962 IKF=5.4019 + CJO=3.00E-12 ISR=0 BV=31.5 IBV=1.00E-6 + TT=19.70E-9 .ENDS *$
- 14. All Rights ReservedCopyright (C) Bee Technologies Inc. 2011 14 V_VSD 0V -0.5V -1.0V -1.5V I(U1:A) 100uA 1.0mA 10mA 100mA 1.0A VSD 0 U1 DSSM3K15AMFV_P Body Diode Forward Current Characteristics Circuit Simulation result Evaluation circuit
- 15. All Rights ReservedCopyright (C) Bee Technologies Inc. 2011 15 Comparison Graph Simulation result Comparison table IDR (mA) -VDS (V) %Error Measurement Simulation 0.1 0.605 0.602 -0.50 1 0.663 0.664 0.15 2 0.679 0.684 0.74 5 0.711 0.711 0.00 10 0.735 0.733 -0.27 20 0.761 0.759 -0.26 50 0.805 0.805 0.00 100 0.858 0.858 0.00 200 0.947 0.947 0.00
- 16. All Rights ReservedCopyright (C) Bee Technologies Inc. 2011 16 Time 9.99us 10.01us 10.03us 10.05us 10.07us 10.09us I(R1) -400mA -200mA 0A 200mA 400mA 0 R1 50 U1 DSSM3K15AMFV_P V1TD = 7ns TF = 10ns PW = 10us PER = 1ms V1 = -9.40V TR = 10ns V2 = 10.8V Reverse Recovery Characteristics Circuit Simulation result Evaluation circuit Comparison Measurement vs. Simulation Parameter Unit Measurement Simulation %Error trj ns 14.00 14.00 0.00 trb ns 12.00 11.67 -2.75 trr ns 26.00 25.67 -1.27
- 17. All Rights ReservedCopyright (C) Bee Technologies Inc. 2011 17 Reverse Recovery Characteristics Reference Trj = 14(ns) Trb = 12(ns) Conditions: Ifwd = lrev = 0.2(A), Rl = 50 Relation between trj and trb Example Measurement
- 18. All Rights ReservedCopyright (C) Bee Technologies Inc. 2011 18 ESD PROTECTION DIODE SPICE MODEL *$ .subckt DZSSM3K15AMFV 1 2 D2 1 3 DZ2 D1 2 3 DZ1 .MODEL DZ1 D + IS=0.01p N=0.1 ISR=0 + CJO=3E-12 BV=25.80 IBV=0.001 RS=0 .MODEL DZ2 D + IS=0.01p N=0.1 ISR=0 CJO=3E-12 + BV=25.80 IBV=0.001 RS=3.75k .ENDS *$
- 19. All Rights ReservedCopyright (C) Bee Technologies Inc. 2011 19 V_VGS 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(U1:1) 0A 0.1mA 0.2mA 0.3mA 0.4mA 0.5mA 0.6mA 0.7mA 0.8mA 0.9mA 1.0mA VGS 0 R1 1G U1 SSM3K15AMFV ESD PROTECTION DIODE Zener Voltage Characteristics Circuit Simulation result Evaluation circuit
- 20. All Rights ReservedCopyright (C) Bee Technologies Inc. 2011 20 Zener Voltage Characteristics Reference IZ = 1(mA) VZ = 29.60(V) at IZ Measurement