The document presents a detailed modeling report for the bipolar junction transistor (BJT) part number 2SC6026MFV-Y manufactured by Toshiba, including various characteristics such as saturation current, forward and reverse beta, capacitances, and switching times. It includes comparisons of simulation results with measurements, highlighting the accuracy and error percentages. Overall, the report serves as a comprehensive reference for understanding the electrical behavior of the specified transistor under various conditions.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
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Bee Technologies Inc.
COMPONENTS: BIPOLAR JUNCTION TRANSISTOR
PART NUMBER: 2SC6026MFV-Y
MANUFACTURER: TOSHIBA
Device Modeling Report

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BJT SPICE Model Parameters
PSpice model
parameter
Model description
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC
Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS

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Ic
Vce
VAR
(X1,Y1)
(X2,Y2)
Y=aX+b
Reverse
Reverse Early Voltage Characteristic

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Reverse DC Beta Characteristic (IE vs. hFE)
Emitter Current (A)
Measuremen
tSimulation

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Ic
Vce
VAF
(X1,Y1)
(X2,Y2)
Y=aX+b
Forward
Forward Early Voltage Characteristic

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C-B Capacitance Characteristics
REVERSE VOLTAGE VR (V)
E-B Capacitance Characteristics
REVERSE VOLTAGE VR (V)
Measurement
Simulation
Measurement
Simulation

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V1
6V
I1
0
Q1
Q2SC6026MFV-Y
IC(Q1)
100uA 1.0mA 10mA 100mA 1.0A
IC(Q1)/ IB(Q1)
10
100
1.0K
Transistor hFE-IC Characteristics
Simulation result
Evaluation circuit

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Comparison Graph
Simulation result
Comparison table
IC (mA)
hFE
%Error
Measurement Simulation
0.1 221.000 224.354 1.52
0.2 221.000 224.662 1.66
0.5 220.500 225.586 2.31
1 220.500 227.127 3.01
2 220.500 230.208 4.40
5 220.500 229.786 4.21
10 220.500 226.455 2.70
20 220.000 219.226 -0.35
50 205.300 195.621 -4.71
100 145.700 148.867 2.17
VCE=6V

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IC(Q1)
100uA 1.0mA 10mA 100mA 1.0A
V(Q1:c)
10mV
100mV
1.0V
VC
I1
0Adc
0
F1
F
10
Q1
Q2SC6026MFV-Y
VCE(Sat)-IC Characteristics
Simulation result
Evaluation circuit

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Comparison Graph
Simulation result
Comparison table
IC (mA)
VCE(sat) (mV)
%Error
Measurement Simulation
0.1 44.700 45.985 2.87
0.2 41.010 40.875 -0.33
0.5 37.600 36.765 -2.22
1 35.400 35.141 -0.73
2 34.200 34.657 1.34
5 34.600 36.241 4.74
10 40.010 40.313 0.76
20 50.850 49.284 -3.08
50 80.550 77.967 -3.21
100 133.600 134.584 0.74
IC/IB =10

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VC
I1
0
F1
F
10
Q1
Q2SC6026MFV-Y
VBE(Sat)-IC Characteristics
Simulation result
IC(Q1)
100uA 1.0mA 10mA 100mA 1.0A
V(Q1:b)
100mV
1.0V
10V
Evaluation circuit

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Comparison Graph
Simulation result
Comparison table
IC (mA)
VBE(sat) (V)
%Error
Measurement Simulation
0.1 0.598 0.616 3.01
0.2 0.618 0.635 2.77
0.5 0.650 0.661 1.69
1 0.685 0.680 -0.73
2 0.700 0.701 0.14
5 0.727 0.731 0.55
10 0.775 0.758 -2.19
20 0.809 0.796 -1.61
50 0.896 0.878 -2.01
100 0.958 1.000 4.33
IC/IB =10

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Time
21us 23us 25us 27us 29us 31us
1 V(L2:1) 2 V(L1:1)
-4.0V
-3.0V
-2.0V
-1.0V
0V
1.0V
2.0V
3.0V
4.0V
1
-40V
-30V
-20V
-10V
0V
10V
20V
30V
40V
2
>>
Q1
Q2SC6026MFV-Y
D1
D1FS6
D2
D1FS6
V1
TD = 5.25u
TF = 20ns
PW = 20us
PER = 2000us
V1 = 0
TR = 20ns
V2 = 3
R1
380
0
VCC
30
R2
900
RL
600
L1
30nH
1 2
L2
30n
1 2
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Comparison table
Test condition: VCC=30(V),RL=600(Ω), IB1= -IB2=5(mA)
Parameter Unit Measurement Simulation %Error
tf ns 18.800 18.905 0.56
tstg us 1.220 1.231 0.93

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Switching Characteristics Reference

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V_V1
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V 7.0V
IC(Q1)
0A
20mA
40mA
60mA
80mA
100mA
120mA
V1
0
I1
Q1
Q2SC6026MFV-Y
Output Characteristics
Simulation result
Evaluation circuit
IB= 0.1 mA
0.2
0.3
0.5
1.0
0.7
2.0

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Output Characteristics Reference