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Device Modeling Report




COMPONENTS: Digital transistor (BRT)
PART NUMBER: RN1906AFS
MANUFACTURER: TOSHIBA




              Bee Technologies Inc.



All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
                                                               1
DIGITAL TRANSISTOR MODEL
PSpice model
                                           Model description
 parameter
     IS         Saturation Current
     BF         Ideal Maximum Forward Beta
     NF         Forward Current Emission Coefficient
    VAF         Forward Early Voltage
    IKF         Forward Beta Roll-off Knee Current
    ISE         Non-ideal Base-Emitter Diode Saturation Current
     NE         Non-ideal Base-Emitter Diode Emission Coefficient
     BR         Ideal Maximum Reverse Beta
     NR         Reverse Emission Coefficient
    VAR         Reverse Early Voltage
    IKR         Reverse Beta Roll-off Knee Current
    ISC         Non-ideal Base-Collector Diode Saturation Current
     NC         Non-ideal Base-Collector Diode Emission Coefficient
     NK         Forward Beta Roll-off Slope Exponent
     RE         Emitter Resistance
     RB         Base Resistance
     RC         Series Collector Resistance
    CJE         Zero-bias Emitter-Base Junction Capacitance
    VJE         Emitter-Base Junction Potential
    MJE         Emitter-Base Junction Grading Coefficient
    CJC         Zero-bias Collector-Base Junction Capacitance
    VJC         Collector-base Junction Potential
    MJC         Collector-base Junction Grading Coefficient
     FC         Coefficient for Onset of Forward-bias Depletion
                Capacitance
     TF         Forward Transit Time
    XTF         Coefficient for TF Dependency on Vce
    VTF         Voltage for TF Dependency on Vce
    ITF         Current for TF Dependency on Ic
    PTF         Excess Phase at f=1/2pi*TF
    TR          Reverse Transit Time
    EG          Activation Energy
    XTB         Forward Beta Temperature Coefficient
    XTI         Temperature Coefficient for IS




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
                                                                              2
IC-VI(ON) Characteristics
Circuit simulation result

         100mA




          10mA




         1.0mA




         100uA
            100mV                   1.0V                        10V             100V
                -I(V1)
                                                   V_V2

Evaluation circuit




                                   Q1               RN1906AFS
                                                 Q2
                                                    U1                V1


                                                                      0.2Vdc
                                            V2

                                            0Vdc




                                           0




                 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
                                                                                       3
Comparison Graph
Circuit Simulation Result

                                        100
                                                      Measurement
                                                      Simulation
          COLLECTOR CURRENT : Ic (mA)




                                        10




                                          1




                                        0.1
                                              0.1              1                  10                   100
                                                            INPUT VOLTAGE : VI(ON) (V)

Simulation Result


        Condition : VCE = 0.2 V
                                                                   VI(ON) (V)
                      Ic(mA)                                                                   Error (%)
                                                    Measurement             Simulation
                                          0.1                  0.690                   0.682           -1.18
                                          0.2                  0.710                   0.706           -0.56
                                          0.5                  0.750                   0.744           -0.78
                                            1                  0.790                   0.783           -0.91
                                            2                  0.850                   0.839           -1.24
                                            5                  1.000                   0.977           -2.32




                                        All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
                                                                                                               4
IC-VI(OFF) Characteristics
Circuit simulation result

          10mA




         1.0mA




         100uA




          10uA
             0.2V           0.4V         0.6V            0.8V          1.0V     1.2V
                 I(U1:3)
                                                  V_V2

Evaluation circuit




                                    Q1            RN1906AFS
                                                Q2
                                                  U1
                                                                V1

                                                                5Vdc

                                           V2
                                           0Vdc




                                           0




                 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
                                                                                       5
Comparison Graph
Circuit Simulation Result




Simulation Result


        Condition : VCC = 5 V
                                        VI(OFF) (V)
           Ic(uA)                                                     Error (%)
                            Measurement           Simulation
                 10                 0.620                  0.609              -1.73
                 20                 0.642                  0.630              -1.95
                 50                 0.668                  0.657              -1.68
                100                 0.690                  0.678              -1.71
                200                 0.710                  0.701              -1.23
                500                 0.745                  0.737              -1.09
               1000                 0.780                  0.772              -1.02
               2000                 0.830                  0.823              -0.90
               3000                 0.880                  0.865              -1.70




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
                                                                                      6
hFE-IC Characteristics
Circuit simulation result
         1.0K




          100




           10
           1.0mA                                  10mA                         100mA
               I(V2)/   I_I1
                                                I(V2)

Evaluation circuit


                                                         V2


                                                         0Vdc


                                    Q1             RN1906AFS
                                                Q2
                                                   U1
                                                                VCE
                                                                5Vdc
                                           0Adc

                                           I1




                                                  0




                All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
                                                                                       7
Comparison Graph
Circuit Simulation Result




Simulation Result


        Condition : VCC = 5 V
                                           hFE
           Ic(mA)                                                    Error (%)
                            Measurement           Simulation
                     1             47.000                47.098                0.21
                     2             71.000                71.100                0.14
                     5            100.000               103.176                3.18
                    10            120.000               119.850               -0.13
                    20            128.000               124.348               -2.85
                    30            122.000               118.470               -2.89
                    40            108.000               107.614               -0.36
                    50             90.000                90.939                1.04




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
                                                                                      8
VCE(Sat)-IC Characteristics
Circuit simulation result

          1.0V




         100mV




          10mV
            1.0mA                                10mA                           100mA
                V(F1:2)
                                                 I_I2

Evaluation circuit




                                 Q1           RN1906AFS
                                            Q2
                                              U1

                                                 F1
                                                 GAIN = 0.05


                                                               0Adc

                                                 F             I2



                                             0




                 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
                                                                                        9
Comparison Graph
Circuit Simulation Result




Simulation Result


        Condition : IC/IB=20
                                     VCE(sat) (V)
            Ic(mA)                                                    Error (%)
                            Measurement        Simulation
                      1             0.086              0.088                   2.79
                      2             0.076              0.077                   1.77
                      5             0.074              0.075                   0.94
                     10             0.080              0.081                   1.35
                     20             0.099              0.099                   0.32
                     30             0.120              0.120                  -0.10
                     40             0.145              0.143                  -1.53
                     50             0.170              0.176                   3.31




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
                                                                                      10

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SPICE MODEL of RN1906AFS in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: Digital transistor (BRT) PART NUMBER: RN1906AFS MANUFACTURER: TOSHIBA Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 1
  • 2. DIGITAL TRANSISTOR MODEL PSpice model Model description parameter IS Saturation Current BF Ideal Maximum Forward Beta NF Forward Current Emission Coefficient VAF Forward Early Voltage IKF Forward Beta Roll-off Knee Current ISE Non-ideal Base-Emitter Diode Saturation Current NE Non-ideal Base-Emitter Diode Emission Coefficient BR Ideal Maximum Reverse Beta NR Reverse Emission Coefficient VAR Reverse Early Voltage IKR Reverse Beta Roll-off Knee Current ISC Non-ideal Base-Collector Diode Saturation Current NC Non-ideal Base-Collector Diode Emission Coefficient NK Forward Beta Roll-off Slope Exponent RE Emitter Resistance RB Base Resistance RC Series Collector Resistance CJE Zero-bias Emitter-Base Junction Capacitance VJE Emitter-Base Junction Potential MJE Emitter-Base Junction Grading Coefficient CJC Zero-bias Collector-Base Junction Capacitance VJC Collector-base Junction Potential MJC Collector-base Junction Grading Coefficient FC Coefficient for Onset of Forward-bias Depletion Capacitance TF Forward Transit Time XTF Coefficient for TF Dependency on Vce VTF Voltage for TF Dependency on Vce ITF Current for TF Dependency on Ic PTF Excess Phase at f=1/2pi*TF TR Reverse Transit Time EG Activation Energy XTB Forward Beta Temperature Coefficient XTI Temperature Coefficient for IS All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 2
  • 3. IC-VI(ON) Characteristics Circuit simulation result 100mA 10mA 1.0mA 100uA 100mV 1.0V 10V 100V -I(V1) V_V2 Evaluation circuit Q1 RN1906AFS Q2 U1 V1 0.2Vdc V2 0Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 3
  • 4. Comparison Graph Circuit Simulation Result 100 Measurement Simulation COLLECTOR CURRENT : Ic (mA) 10 1 0.1 0.1 1 10 100 INPUT VOLTAGE : VI(ON) (V) Simulation Result Condition : VCE = 0.2 V VI(ON) (V) Ic(mA) Error (%) Measurement Simulation 0.1 0.690 0.682 -1.18 0.2 0.710 0.706 -0.56 0.5 0.750 0.744 -0.78 1 0.790 0.783 -0.91 2 0.850 0.839 -1.24 5 1.000 0.977 -2.32 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 4
  • 5. IC-VI(OFF) Characteristics Circuit simulation result 10mA 1.0mA 100uA 10uA 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V I(U1:3) V_V2 Evaluation circuit Q1 RN1906AFS Q2 U1 V1 5Vdc V2 0Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 5
  • 6. Comparison Graph Circuit Simulation Result Simulation Result Condition : VCC = 5 V VI(OFF) (V) Ic(uA) Error (%) Measurement Simulation 10 0.620 0.609 -1.73 20 0.642 0.630 -1.95 50 0.668 0.657 -1.68 100 0.690 0.678 -1.71 200 0.710 0.701 -1.23 500 0.745 0.737 -1.09 1000 0.780 0.772 -1.02 2000 0.830 0.823 -0.90 3000 0.880 0.865 -1.70 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 6
  • 7. hFE-IC Characteristics Circuit simulation result 1.0K 100 10 1.0mA 10mA 100mA I(V2)/ I_I1 I(V2) Evaluation circuit V2 0Vdc Q1 RN1906AFS Q2 U1 VCE 5Vdc 0Adc I1 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 7
  • 8. Comparison Graph Circuit Simulation Result Simulation Result Condition : VCC = 5 V hFE Ic(mA) Error (%) Measurement Simulation 1 47.000 47.098 0.21 2 71.000 71.100 0.14 5 100.000 103.176 3.18 10 120.000 119.850 -0.13 20 128.000 124.348 -2.85 30 122.000 118.470 -2.89 40 108.000 107.614 -0.36 50 90.000 90.939 1.04 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 8
  • 9. VCE(Sat)-IC Characteristics Circuit simulation result 1.0V 100mV 10mV 1.0mA 10mA 100mA V(F1:2) I_I2 Evaluation circuit Q1 RN1906AFS Q2 U1 F1 GAIN = 0.05 0Adc F I2 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 9
  • 10. Comparison Graph Circuit Simulation Result Simulation Result Condition : IC/IB=20 VCE(sat) (V) Ic(mA) Error (%) Measurement Simulation 1 0.086 0.088 2.79 2 0.076 0.077 1.77 5 0.074 0.075 0.94 10 0.080 0.081 1.35 20 0.099 0.099 0.32 30 0.120 0.120 -0.10 40 0.145 0.143 -1.53 50 0.170 0.176 3.31 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 10