SPICE MODEL of SSM5H08TU (Standard+BDS+SBDP Model) in SPICE PARK

Device Modeling Report

COMPONENTS: Power MOSFET (Standard)
PART NUMBER: SSM5H08TU
MANUFACTURER: TOSHIBA
Body Diode (Standard) / ESD Protection Diode
Schottky Barrier Diode (Professional)

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

MOSFET MODEL

Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility


Body Diode Model
Pspice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time

Circuit Configuration

SSM5H08TU


Transconductance Characteristic

Circuit Simulation Result

Comparison table

gfs
ID(A) Error (%)
Measurement Simulation
0.50 2.40 2.39 -0.46
1.00 3.37 3.34 -0.92
2.00 4.70 4.64 -1.19


Vgs-Id Characteristic

Circuit Simulation result

10A

1.0A

100mA

10mA

1.0mA

100uA

10uA
0V 1.0V 2.0V 3.0V 4.0V
I(V2)
V_V1

Evaluation circuit

OP EN

OP EN

R1
10 0M EG
V2

0V dc 0
OP EN

V1
V3 10 Vd c
3V dc

0


Comparison Graph


Simulation Result

VGS(V)
ID(A) Error (%)
0.01 1.13 1.14 0.80
0.02 1.16 1.17 0.69
0.05 1.20 1.21 0.83
0.10 1.26 1.27 0.79
0.20 1.35 1.35 0.00
0.50 1.49 1.50 0.67
1.00 1.67 1.68 0.60
2.00 1.92 1.94 1.04


Id-Rds(on) Characteristic


( VDS(V), Id(A) )

Evaluation circuit
U1
OPEN
OPEN OPEN

V1
R1
100MEG 0Vdc
SSM5H08TU

0 VG VD
2.5Vdc 10Vdc

0

Simulation Result

ID=0.756A, VGS=2.5V Measurement Simulation Error (%)
R DS (on) 164.88 m 164.88 m 0.00


Id-Rds(on) Characteristic Reference

ID =

VDS =

VGS =


Gate Charge Characteristic

10V

8V

6V

4V

2V

0V
0 0.5n 1.0n 1.5n 2.0n 2.5n 3.0n 3.5n
V(W1:2)
Time*10ms

Evaluation circuit

V2

0Vdc
open

open

Dbreak
R1

PER = 1000u U7 D1 1MEG
PW = 600u SSM5H08TU_S I2
TF = 10n W1
TR = 10n + 1.5Adc
TD = 0 0
-
I2 = 10m open
I1 W
I1 = 0 IOFF = 10mA V1
ION = 0uA 10Vdc

0

Simulation Result

VDD=10V,ID=1.5A Measurement Simulation Error (%)
Qgs 0.250 nC 0.257 nC 2.800
Qgd 0.565 nC 0.552 nC -2.301


Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd(pF)
VDS(V) Error(%)
0.10 109.00 109.80 0.73
0.20 104.00 104.70 0.67
0.50 94.00 93.62 -0.40
1.00 80.00 80.23 0.29
2.00 63.00 64.13 1.79
5.00 43.00 43.04 0.09
10.00 30.00 30.11 0.37
20.00 20.00 20.25 1.25


Switching Time Characteristic


12V

VDD = 10V Vg = 0/2.5V

8V

4V

0V
4.97us 4.99us 5.01us 5.03us 5.05us 5.07us 5.09us
V(2)*4 V(3)
Time

Evaluation circuit

L1 RL
3
V3
0.03uH 13.35
0Vdc

VDD
U10 10
OPEN OPEN

R1 L2
2

V1 = 0 4.7 0
V1 SSM5H08TU
V2 = 5 R2
TD = 5u
TR = 6n 4.7
TF = 7n
PW = 5u
PER = 100u

0 0
0

Simulation Result

ID=0.75A, VDD=10V
Measurement Simulation Error(%)
VGS=2.5V
ton 15.50 ns 15.52 ns 0.13


Output Characteristic


2.4V

2.2V

2.0V

VGS=1.8V

Evaluation circuit

OPEN

OPEN

R1
100MEG
V2

0Vdc 0
OPEN

V1
V3 2.5Vdc
3Vdc

0


Output Characteristic Reference

2.4V

2.2V

2V

VGS=1.8V


BODY DIODE SPICE MODEL
Forward Current Characteristic

Evaluation Circuit

R1

0.01m
Open
Open
SSM5H08TU
VD U5
0Vdc RS
100MEG

open 0

0


Comparison Graph


Simulation Result

Vfwd(V) Vfwd(V)
Ifwd(A) Measurement Simulation %Error
0.010 0.587 0.591 0.681
0.020 0.605 0.604 -0.165
0.050 0.625 0.623 -0.320
0.100 0.637 0.639 0.314
0.200 0.660 0.659 -0.152
0.500 0.690 0.689 -0.145
1.000 0.710 0.713 0.423
2.000 0.739 0.737 -0.271


Forward Current Characteristic Reference


Reverse Recovery Characteristic


Evaluation circuit

R1

50
Open
Open
SSM5H08TU
V1 = -9.4v V1 U5
V2 = 10.6v RS
TD = 0
TR = 10ns 100MEG
TF = 10ns
PW = 1us
PER = 100us
open 0

0

Compare Measurement vs. Simulation

Trr Measurement Simulation Error(%)
Trj+Trb 11.6 ns 11.594 ns -0.05172


Reverse Recovery Characteristic Reference

Measurement

trj=6.4(ns)
trb=5.2(ns)
Conditions:Ifwd=Irev=0.2(A),Rl=50

Example

Relation between trj and trb


ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic

Evaluation Circuit

U1
OPEN OPEN
OPEN

R2
OPEN
R1
0.01m
100MEG SSM5H08TU
V1
0Vdc
0

0


Zener Voltage Characteristic Reference


DIODE SCHOTTKY SPICE MODEL
Forward Current Characteristic

Evaluation Circuit

R1

0.01m

open open open
V1
0Vdc RS

SSM5H08TU 100MEG

U1
open 0

0


Comparison Graph


Simulation Result

Vfwd (V)
Ifwd (A) Measurement Simulation %Error
0.001 0.130 0.138 6.154
0.002 0.155 0.157 1.290
0.005 0.185 0.182 -1.622
0.011 0.208 0.203 -2.404
0.022 0.231 0.228 -1.299
0.052 0.260 0.257 -1.154
0.104 0.290 0.290 0.000
0.202 0.337 0.336 -0.297
0.499 0.427 0.427 0.000


Junction Capacitance Characteristic


Evaluation Circuit

V2
open
0Vdc
open
RS
U1
V2 = 10 V1 100MEG
V1 = 0 SSM5H08TU
TD = 0
TR = 1us
TF = 10ns 0
PW = 50us
open open
PER = 10us

0


Comparison Graph


Simulation Result

Cj(pF)
Vrev(V) Measurement Simulation %Error
0.010 48.000 47.844 -0.325
0.020 47.000 47.377 0.802
0.050 45.500 45.864 0.800
0.100 43.000 43.573 1.333
0.200 39.000 39.690 1.769
0.500 32.000 32.453 1.416
1.000 25.000 26.085 4.340
2.000 20.000 20.018 0.090
5.000 13.000 13.457 3.515
10.000 9.500 9.841 3.589


Reverse Characteristic


Evaluation Circuit

RL

0.1m

open open open
0Vdc
V1
RS

SSM5H08TU 100MEG

U1
open
0

0


Comparison Graph


Simulation Result

Irev (uA)
Vrev(V) Measurement Simulation %Error
6.000 6.650 6.800 2.256
8.000 7.450 7.320 -1.745
10.000 8.300 8.000 -3.614


Reverse Current Characteristic Reference


SPICE MODEL of SSM5H08TU (Standard+BDS+SBDP Model) in SPICE PARK

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SPICE MODEL of SSM5H08TU (Standard+BDS+SBDP Model) in SPICE PARK