SPICE MODEL of US6T6TR in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: TRANSISTOR
PART NUMBER: US6T6TR
MANUFACTURER: ROHM
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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2. TRANSISTOR MODEL
PSpice model
Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
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4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
Emitter Current
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
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5

6. C-B Capacitance Characteristics
Measurement
Simulation
E-B Capacitance Characteristics
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
6

7. Transistor hFE-IC Characteristics
Circuit Simulation Result
1.0K
100
10
-1.0mA -10A
IC(X_U1.Q_Q1)/ I(U1:3)
IC(X_U1.Q_Q1)
Evaluation Circuit
VC
F1
U1
F
US6T6TR
0Adc 20
I1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
7

8. Comparison Graph
Circuit Simulation Result
Simulation Result
hFE
Ic(A) Error(%)
Measurement Simulation
-0.001 580.000 578.681 -0.227
-0.002 580.000 576.619 -0.583
-0.005 575.000 572.750 -0.391
-0.010 565.000 568.268 0.578
-0.020 560.000 561.064 0.190
-0.050 535.000 543.381 1.567
-0.100 514.000 519.277 1.027
-0.200 480.000 481.871 0.390
-0.500 425.000 411.094 -3.272
-1.000 365.000 346.954 -4.944
-2.000 295.000 281.115 -4.707
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
8

9. VCE(Sat)-IC Characteristics
Circuit Simulation Result
-10V
-1.0mV
-1.0mA -10A
VC(X_U1.Q_Q1)
IC(X_U1.Q_Q1)
Evaluation Circuit
VC
F1
U1
F
US6T6TR
0Adc 20
I1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
9

10. Comparison Graph
Circuit Simulation Result
Simulation Result
VCE(sat)(V)
IC(A) Error(%)
Measurement Simulation
-0.001 -0.0043 -0.0043 0.4651
-0.002 -0.0045 -0.0045 0.4444
-0.005 -0.0050 -0.0050 0.8000
-0.010 -0.0058 -0.0058 0.1724
-0.020 -0.0071 -0.0071 0.4225
-0.050 -0.0110 -0.0109 -0.9091
-0.100 -0.0165 -0.0163 -1.2121
-0.200 -0.0270 -0.0263 -2.4556
-0.500 -0.0565 -0.0548 -2.9735
-1.000 -0.1000 -0.1007 0.7000
-2.000 -0.1850 -0.1907 3.0924
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
10

11. VBE(Sat)-IC Characteristics
Circuit Simulation Result
-10V
-1.0mV
-1.0mA -10A
VB(X_U1.Q_Q1)
IC(X_U1.Q_Q1)
Evaluation Circuit
VC
F1
U1
0Adc F US6T6TR
20
I1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
11

12. Comparison Graph
Circuit Simulation Result
Simulation Result
VBE(sat)(V)
IC(A) Error(%)
Measurement Simulation
-0.001 -0.770 -0.740 -3.896
-0.002 -0.785 -0.758 -3.439
-0.005 -0.795 -0.782 -1.635
-0.010 -0.815 -0.800 -1.840
-0.020 -0.825 -0.843 2.182
-0.050 -0.850 -0.862 1.412
-0.100 -0.870 -0.862 -0.920
-0.200 -0.890 -0.882 -0.899
-0.500 -0.910 -0.911 0.110
-1.000 -0.935 -0.935 0.000
-2.000 -0.960 -0.964 0.417
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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13. Switching Characteristics
Circuit simulation result
10V 40V
1 2
5V 20V
0V 0V
-5V -20V
>>
-10V -40V
0s 0.5us 1.0us 1.5us 2.0us
1 V(R1:2) 2 V(U1:5)
Time
Evaluation circuit
D1 R2 L2 RL
1 2
R1 L1
220 50nH 15
1 2 D1N5817
D2 R3
50 30nH
V1 = -6 U1 VCC
V2 = 5 V1 D1N5817 180 US6T6TR
TD = 1u
TR = 10ns -25
TF = 10ns
PW = 10us
PER = 20us
0
Simulation result
Measurement Simulation %Error
tf (ns) 50.000 48.158 -3.684
tstg (ns) 112.000 110.443 -1.390
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
13

14. Switching Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
14

15. Ft - IC Characteristics
Circuit Simulation Result
1.0G
100M
10M
-1.0m -10
ZeroCross(DB(I(U2:2)))
V_Ic
Evaluation Circuit
H1
+
-
H
0
U1
US6T6TR
Vce
U2 -2Vdc
0
F1 US6T6TR
G1
IC + I1
1m 0 1Aac
-
G 0Adc
Ic F 0
GAIN = 1e6 0 0
0 0
Simulation Result
FT(MHz)
IC(A) Error(%)
Measurement Simulation
-0.200 405.000 420.743 3.887
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
15

16. Output Characteristics
Circuit Simulation Result
-1.0A
-0.9A
-1.8mA
-0.8A
-1.6mA
-0.7A
-1.4mA
-0.6A -1.2mA
-1mA
-0.5A
-800uA
-0.4A
-600uA
-0.3A
-400uA
-0.2A
-200uA
-0.1A
IB=-0
0A
0V -0.5V -1.5V -2.5V -3.5V -4.5V
IC(X_U1.Q_Q1)
V_V1
Evaluation Circuit
U1
V1
US6T6TR
I1 -5Vdc
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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17. Output Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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