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Device Modeling Report




COMPONENTS: PHOTOCOUPLER
PART NUMBER: PC111LY
MANUFACTURER: SHARP




              Bee Technologies Inc.


All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
DIODE MODEL
  Pspice model
                                          Model description
   Parameter
        IS         Saturation Current
        N          Emission Coefficient
       RS          Series Resistance
       IKF         High-injection Knee Current
      CJO          Zero-bias Junction Capacitance
        M          Junction Grading Coefficient
        VJ         Junction Potential
      ISR          Recombination Current Saturation Value
       BV          Reverse Breakdown Voltage(a positive value)
      IBV          Reverse Breakdown Current(a positive value)
        TT         Transit Time

BIPOLAR JUNCTION TRANSISTOR MODEL
  Pspice
   model                       Model description
 parameter
    NR     Reverse Emission Coefficient
    RB     Base Resistance
    RC     Series Collector Resistance
    CJE    Zero-bias Emitter-Base Junction Capacitance
    CJC    Zero-bias Collector-Base Junction Capacitance
     TF    Forward Transit Time
    TR     Reverse Transit Time

VOLTAGE CONTROLLED VOLTAGE SOURCE MODEL(VCVS)


E<Name><(+)Node><(-)Node>VALUE={Expression}

E<Name><(+)Node><(-)Node>TABLE={Expression}




            All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
VOLTAGE CONTROLLED CURRENT SOURCE MODEL(VCCS)


E<Name><(+)Node><(-)Node>VALUE={Expression}


CURRENT CONTROLLED MODEL(W)
  Pspice
   model                        Model description
 parameter
   IOFF    Controlling current to Off state
    ION    Controlling current to On state
   ROFF    Off Resistance
   RON     On Resistance




            All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Input Device Forward Current Characteristics




                                            Measurement
                                            Simulation




Input Device Junction Capacitance Characteristics




                                              Measurement
                                              Simulation




            All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Input Device Reverse Recovery Characteristics




                                             Measurement




trj= 244 n(s)
trb= 160 n(s)
Conditions:Ifwd=Irev=0.04(A),Rl=50



                                                        Example




                            Relation between trj and trb

              All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
LED IV Curve Characteristics

Simulation result


           500mA




                                                               Simulation
           100mA




            10mA




           1.0mA


                    0V      0.5V   1.0V       1.5V    2.0V    2.5V    3.0V 3.5V
                         I(I1)
                                                V(U3:A)




Evaluation Circuit



                                          U3
                                      1                   6
                                          A          NC
                                                                            V1
                                      2                   5
           50mAdc            I1           K           C              2Vdc

                                      3                   4
                                          NC2         E

                                          pc111ly



                         0                                                  0




                All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Comparison Graph




Comparison Table

                                    Vfwd(V)
         Ifwd(A)                                                        % Error
                           Measurement               Simulation
               0.001              1.060                   1.056             -0.377
               0.002              1.080                   1.088              0.741
               0.005              1.140                   1.140              0.000
                0.01              1.190                   1.195              0.420
                0.02              1.280                   1.266             -1.094
                0.05              1.400                   1.403              0.214




             All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Transistor Saturation Characteristics

Simulation result


           200mV




                                                                Simulation



           100mV




              0V
                   0s                                 50ms                       100ms
                         V(I2:-)
                                                      Time


Evaluation Circuit



                                       U3
                                   1                   6
                                       A         NC
                    I1
                                   2                   5                 I2
                    20mAdc             K          C
                                                                         1mAdc
                                   3                   4
                                       NC2        E

                                       pc111ly


                    0                                                    0



Comparison Table

        RBE= ∞                Measurement                    Simulation           % Error
        Vce(sat) (V)                  0.100                          0.100             0.000

               All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
CTR(Current Transfer Ratio) Characteristics

Simulation result


            200

            180

            160
                                                               Simulation
            140

            120

            100

               80

               60

               40

               20

              0
           200uA                   1.0mA                10mA                   100mA
                         (IC(X_U1.Q_Q1)/ I(X_U1.D_D1))*100
                                                 I_I1




Evaluation Circuit


                                                                   V3
                    V2

                                                                        0Vdc
                          0Vdc

                                          U1
                                      1                  6
                                          A         NC
                                                                                 V1
                                      2                  5              5Vdc
            I1                            K          C

           20mAdc                     3                  4
                                          NC2        E

                                          pc111ly




           0                                                                     0




                    All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Rise Curve     Table

                                   CTR(%)
      If(mA)                                                         % Error
                         Measurement     Simulation
           0.200               13.000          13.294                          2.262
           0.500               36.000          36.763                          2.119
           1.000               56.000          54.560                         -2.571
           2.000               74.000          72.259                         -2.353
           8.000              110.000         107.635                         -2.150
          10.000              113.000         113.812                          0.719



Fall Curve Table

                                  CTR(%)
      If(mA)                                                         % Error
                       Measurement      Simulation
          10.000              113.00         113.812                           0.719
          20.000             109.000         106.875                          -1.950
          30.000             103.000          99.375                          -3.519
          40.000              95.000          92.642                          -2.482




               All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Switching Time Characteristics

Simulation result

           20mA          3.0V
       1            2



                                                                            Simulation
                         2.0V


           10mA


                         1.0V




                             >>
             0A              0V
                                0s               50us            100us         150us        200us
                                 1       I(V1)    2         V(U2:C)
                                                                  Time


Evaluation Circuit

                             V1


                                  0Vdc
       I1 = 0
       I2 = 20m                                                                                     RL
       TD = 0                                           U2
       TF = 10n                                    1                    6                           100
       TR = 10n         I2                              A          NC
       PW = 20u
       PER = 500u                                  2                    5                       V2
                                                        K           C
                                                                                         2Vdc
                                                   3                    4
                                                        NC2         E

                                                        pc111ly



                     0                                                                          0


Comparison Table
   Vce=2V,RL=100                 Measurement                     Simulation             % Error
        ts (us)                           0.600                           0.603                0.500
        tf (us)                           6.000                           6.041                0.683

                    All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

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SPICE MODEL of PC111LY in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: PHOTOCOUPLER PART NUMBER: PC111LY MANUFACTURER: SHARP Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 2. DIODE MODEL Pspice model Model description Parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time BIPOLAR JUNCTION TRANSISTOR MODEL Pspice model Model description parameter NR Reverse Emission Coefficient RB Base Resistance RC Series Collector Resistance CJE Zero-bias Emitter-Base Junction Capacitance CJC Zero-bias Collector-Base Junction Capacitance TF Forward Transit Time TR Reverse Transit Time VOLTAGE CONTROLLED VOLTAGE SOURCE MODEL(VCVS) E<Name><(+)Node><(-)Node>VALUE={Expression} E<Name><(+)Node><(-)Node>TABLE={Expression} All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 3. VOLTAGE CONTROLLED CURRENT SOURCE MODEL(VCCS) E<Name><(+)Node><(-)Node>VALUE={Expression} CURRENT CONTROLLED MODEL(W) Pspice model Model description parameter IOFF Controlling current to Off state ION Controlling current to On state ROFF Off Resistance RON On Resistance All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 4. Input Device Forward Current Characteristics Measurement Simulation Input Device Junction Capacitance Characteristics Measurement Simulation All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 5. Input Device Reverse Recovery Characteristics Measurement trj= 244 n(s) trb= 160 n(s) Conditions:Ifwd=Irev=0.04(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 6. LED IV Curve Characteristics Simulation result 500mA Simulation 100mA 10mA 1.0mA 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V I(I1) V(U3:A) Evaluation Circuit U3 1 6 A NC V1 2 5 50mAdc I1 K C 2Vdc 3 4 NC2 E pc111ly 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 7. Comparison Graph Comparison Table Vfwd(V) Ifwd(A) % Error Measurement Simulation 0.001 1.060 1.056 -0.377 0.002 1.080 1.088 0.741 0.005 1.140 1.140 0.000 0.01 1.190 1.195 0.420 0.02 1.280 1.266 -1.094 0.05 1.400 1.403 0.214 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 8. Transistor Saturation Characteristics Simulation result 200mV Simulation 100mV 0V 0s 50ms 100ms V(I2:-) Time Evaluation Circuit U3 1 6 A NC I1 2 5 I2 20mAdc K C 1mAdc 3 4 NC2 E pc111ly 0 0 Comparison Table RBE= ∞ Measurement Simulation % Error Vce(sat) (V) 0.100 0.100 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 9. CTR(Current Transfer Ratio) Characteristics Simulation result 200 180 160 Simulation 140 120 100 80 60 40 20 0 200uA 1.0mA 10mA 100mA (IC(X_U1.Q_Q1)/ I(X_U1.D_D1))*100 I_I1 Evaluation Circuit V3 V2 0Vdc 0Vdc U1 1 6 A NC V1 2 5 5Vdc I1 K C 20mAdc 3 4 NC2 E pc111ly 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 10. Rise Curve Table CTR(%) If(mA) % Error Measurement Simulation 0.200 13.000 13.294 2.262 0.500 36.000 36.763 2.119 1.000 56.000 54.560 -2.571 2.000 74.000 72.259 -2.353 8.000 110.000 107.635 -2.150 10.000 113.000 113.812 0.719 Fall Curve Table CTR(%) If(mA) % Error Measurement Simulation 10.000 113.00 113.812 0.719 20.000 109.000 106.875 -1.950 30.000 103.000 99.375 -3.519 40.000 95.000 92.642 -2.482 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 11. Switching Time Characteristics Simulation result 20mA 3.0V 1 2 Simulation 2.0V 10mA 1.0V >> 0A 0V 0s 50us 100us 150us 200us 1 I(V1) 2 V(U2:C) Time Evaluation Circuit V1 0Vdc I1 = 0 I2 = 20m RL TD = 0 U2 TF = 10n 1 6 100 TR = 10n I2 A NC PW = 20u PER = 500u 2 5 V2 K C 2Vdc 3 4 NC2 E pc111ly 0 0 Comparison Table Vce=2V,RL=100 Measurement Simulation % Error ts (us) 0.600 0.603 0.500 tf (us) 6.000 6.041 0.683 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006