SPICE MODEL of TPCA8011-H (Professional+BDP Model) in SPICE PARK

Device Modeling Report

COMPONENTS: Power MOSFET (Professional)
PART NUMBER: TPCA8011-H
MANUFACTURER: TOSHIBA
Body Diode (Professional) / ESD Protection Diode

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

MOSFET MODEL

PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility


Transconductance Characteristic

Circuit Simulation Result

150
140
130
120
110
100
90
80
gfs

70
60
50
40
30
20
Measurement
10
Simulation
0
0 10 20 30 40 50
ID(A)
Comparison table

gfs
Id(A) Error(%)
Measurement Simulation

1 28.500 28.000 -1.754
2 33.000 33.333 1.010
5 50.000 50.000 0.000
10 68.000 68.667 0.980
20 95.000 95.238 0.251
50 141.000 142.857 1.317


Vgs-Id Characteristic

Circuit Simulation result

100A

80A

60A

40A

20A

0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V
I(V3)
V_V2
Evaluation circuit

U23

V3

0Vdc

TPCA8011-H V1
V2
0Vdc 10Vdc

0


Comparison Graph


50
Measurement
Simulation

40
ID - Drain Current - A

30

20

10

0
0 1 2 3 4 5 6
VGS - Gate to Source Voltage - V
Simulation Result

VGS(V)
ID(A) Error (%)
0.1 1.350 1.384 2.519
0.2 1.400 1.397 -0.214
0.5 1.420 1.420 0.000
1 1.450 1.446 -0.276
2 1.490 1.484 -0.403
5 1.550 1.560 0.645
10 1.650 1.647 -0.182
20 1.770 1.774 0.226
50 2.000 2.036 1.800


Rds(on) Characteristic


24A

20A

16A

12A

8A

4A

0A
0V 50mV 100mV 150mV 200mV
I(V3)
V_VDS
Evaluation circuit

U23

V3

0Vdc
VGS
TPCA8011-H VDS

4.5Vdc 0Vdc

0

Simulation Result

ID=20A, VGS=10V Measurement Simulation Error (%)
R DS (on) 2.700 m 2.698 m -0.074


Gate Charge Characteristic
10V

8V

6V

4V

2V

0V
0 10n 20n 30n 40n 50n
V(W1:3)
Time*1mS

Evaluation circuit

U23 V2

0Vdc
Dbreak

D1
PER = 1000u
PW = 600u W1 I2
TF = 10n + TPCA8011-H 40Adc
TR = 10n
TD = 0
-
I2 = 1m W
I1 IOFF = 100uA V1
I1 = 0 ION = 0uA 16Vdc

0

Simulation Result

VDD=16V,ID=40A
Measurement Simulation Error (%)
,VGS=5V
Qgs(nC) 7.700 7.684 -0.208
Qgd(nC) 11.000 11.053 0.482
Qg 32.000 31.368 -1.975


Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd(pF)
VDS(V) Error(%)
0.2 2440 2445 0.205
0.5 2130 2150 0.939
1 1820 1850 1.648
2 1480 1500 1.351
5 1050 1050 0.000
10 750 750 0.000
20 550 540 -1.818


Switching Time Characteristic

14V

12V

10V

8V

6V

4V

2V

0V

0.97us 1.00us 1.05us 1.10us 1.15us
V(L1:2)*2 V(L2:1)
Time
Evaluation circuit

U23 L2 RL

50nH 0.5

R1 L1

V1 = 0
30nH
V2 = 10 V2 4.7 V1
TD = 1u R2 TPCA8011-H 10Vdc
TR = 10n
TF = 10n 4.7
PW = 10u
PER = 200u

0

Simulation Result

ID=20 A, VDD=15V
Measurement Simulation Error(%)
VGS=0/10V
Ton(ns) 24.000 23.722 -1.158


Output Characteristic


100A
10 2.6 2.4
6 3
5
80A
2.3

2.2
60A

2.1

40A
2

1.9
20A

VGS=1.7
V

0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(Vdsense)
V_Vvariable

Evaluation circuit

U23

Vdsense

10Vdc 0Vdc

TPCA8011-H Vv ariable

Vstep
5Vdc

0


Forward Current Characteristic


1.0KA

100A

10A

1.0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V
I(R1)
V_V1
Evaluation Circuit

R1
0.01m TPCA8011-H
V1
0Vdc U23

0


Comparison Graph


1000
Measurement
Simulation
Drain reverse current IDR(A)

100

10

1
0 0.2 0.4 0.6 0.8 1

Source-Drain voltage VSD(V)

Simulation Result

VSD(V)
IDR(A) Measuremen Simulation %Error
1 0.590 0.587 -0.508
2 0.610 0.611 0.164
5 0.650 0.652 0.308
10 0.695 0.693 -0.288
20 0.745 0.742 -0.403
50 0.830 0.832 0.241


Reverse Recovery Characteristic

400mA

300mA

200mA

100mA

-0mA

-100mA

-200mA

-300mA

-400mA
0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us 1.4us 1.5us 1.6us
I(R1)
Time
Evaluation Circuit

R1

50

D8011
V1 = -9.4v V1
V2 = 10.6v U23
TD = 7n
TR = 10ns
TF = 13ns
PW = 1us
PER = 100us

0

Compare Measurement vs. Simulation

Measurement Simulation Error (%)
Trj(ns) 16.500 16.542 0.255
Trb(ns) 140.000 138.301 -1.214
Trr(ns) 156.500 154.843 -1.059


Reverse Recovery Characteristic Reference

Trj=16.5(ns)
Trb=140ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50

Example

Relation between trj and trb


Zener Voltage Characteristic

10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1

Evaluation Circuit

U23

R1
TPCA8011-H
R2
0.01m
100MEG
V1
0Vdc

0


Zener Voltage Characteristic Reference


SPICE MODEL of TPCA8011-H (Professional+BDP Model) in SPICE PARK

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