SPICE MODEL of TPCA8005-H (Professional+BDSP Model) in SPICE PARK

Device Modeling Report

COMPONENTS: Power MOSFET (Professional)
PART NUMBER: TPCA8005-H
MANUFACTURER: TOSHIBA
Body Diode (Special) / ESD Protection Diode

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

MOSFET MODEL

PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility


Transconductance Characteristic

Circuit Simulation Result

50

45

40

35

30
gfs

25

20

15

10

5 Measurement
Simulation
0
0 2 4 6 8 10 12 14 16 18 20
ID - Drain Current - A

Comparison table

gfs
Id(A) Error(%)
Measurement Simulation
0.1 3.000 3.125 4.167
0.2 5.000 5.128 2.560
0.5 7.500 7.692 2.560
1 10.500 10.638 1.314
2 15.500 15.625 0.806
5 24.000 24.038 0.158
10 33.200 33.333 0.401
20 45.500 46.404 1.987


Vgs-Id Characteristic

Circuit Simulation result
50A

40A

30A

20A

10A

0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V
I(V3)
V_V2
Evaluation circuit

U23

V3

0Vdc

TPCA8005-H V1
V2
0Vdc 10Vdc

0


Comparison Graph


20
Measurement
Simulation
18

16

14
ID - Drain Current - A

12

10

8

6

4

2

0
0 1 2 3 4 5 6
VGS - Gate to Source Voltage - V

Simulation Result

VGS(V)
ID(A) Error (%)
0.1 2.000 2.097 4.855
0.2 2.100 2.122 1.024
0.5 2.150 2.170 0.930
1 2.200 2.225 1.114
2 2.300 2.303 0.122
5 2.450 2.458 0.335
10 2.600 2.635 1.358
20 2.850 2.890 1.389


Rds(on) Characteristic

16A

14A

12A

10A

8A

6A

4A

2A

0A
0V 50mV 100mV 150mV 200mV
I(V3)
V_VDS
Evaluation circuit

U23

V3

0Vdc
VGS
TPCA8005-H VDS

10Vdc 0Vdc

0

Simulation Result

ID=14A, VGS=10V Measurement Simulation Error (%)
R DS (on) 6.800 m 6.799 m -0.015


Gate Charge Characteristic
20V

16V

12V

8V

4V

0V
0 8n 16n 24n 32n 40n
V(W1:3)
Time*1mS
Evaluation circuit

U23 V2

0Vdc
Dbreak

D1
PER = 1000u
PW = 600u W1 I2
TF = 10n + TPCA8005-H 27Adc
TR = 10n
TD = 0
-
I2 = 1m W
I1 IOFF = 100uA V1
I1 = 0 ION = 0uA 24Vdc

0

Simulation Result

VDD=24V,ID=27A
Measurement Simulation Error (%)
,VGS=10V
Qgs(nC) 4.700 4.724 0.511
Qgd(nC) 5.600 5.696 1.714
Qg 24.000 24.207 0.863


Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd(pF)
VDS(V) Error(%)
0.1 1300.000 1305.000 0.385
0.2 1230.000 1232.000 0.163
0.5 1050.000 1053.000 0.286
1 890.000 890.000 0.000
2 710.000 712.000 0.282
5 510.000 511.000 0.196
10 390.000 390.000 0.000
20 280.000 284.000 1.429


Switching Time Characteristic

12V

10V

8V

6V

4V

2V

0V

0.990us 1.020us 1.050us 1.080us
V(L1:2) V(L2:1)/1.5
Time

Evaluation circuit

U23 L2 RL

50nH 1.1

R1 L1

V1 = 0
30nH
V2 = 20 V2 4.7 V1
TD = 1u R2 TPCA8005-H 15Vdc
TR = 10n
TF = 10n 4.7
PW = 10u
PER = 200u

0

Simulation Result

ID=14 A, VDD=15V
Measurement Simulation Error(%)
VGS=0/10V
Ton(ns) 9.000 9.094 1.044


Output Characteristic


50A
10
5

40A 3.7
8 6

3.5

30A

3.3

20A

3
10A

VGS=2.8 V

0A
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(Vdsense)
V_Vvariable

Evaluation circuit

U23

Vdsense

10Vdc 0Vdc

TPCA8005-H Vv ariable

Vstep
5Vdc

0


Forward Current Characteristic


100A

10A

1.0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V
I(R1)
V_V1

Evaluation Circuit

R1 0.01m

V1
0Vdc U1
DTPCA8005-H_SP

0


Comparison Graph


100
Measurement
Simulation
Drain reverse current IDR (A)

10

1
0 0.2 0.4 0.6 0.8 1
Source-drain voltage VSD (V)

Simulation Result

VSD(V)
IDR(A) %Error
1 0.6700 0.6683 -0.2537
2 0.6900 0.6895 -0.0725
5 0.7200 0.7231 0.4306
10 0.7600 0.7561 -0.5132
20 0.8000 0.7974 -0.3250
50 0.8700 0.8702 0.0230


Reverse Recovery Characteristics (Body Diode)


2.0A

1.5A

1.0A

0.5A

0A

-0.5A

-1.0A

-1.5A

-2.0A
2.12us 2.14us 2.16us 2.20us 2.22us 2.24us 2.26us 2.30us
I(R1)
Time

Evaluation Circuit

R1 Vsense

PARAMETERS:
TF = 1.6u

TF = {TF} V1
VPULSE

0

Compare Measurement vs. Simulation

Measurement Simulation Error (%)
trr 45.2 ns 46.12 ns 2.04


Reverse Recovery Characteristic (Body Diode) Reference

Trr=45.2ns
Conditions:Ifwd=di/dt=30A/us


Zener Voltage Characteristic

10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1

Evaluation Circuit

U23

R1 TPCA8005-H

R2
0.01m
100MEG
V1
0Vdc

0


Zener Voltage Characteristic Reference


SPICE MODEL of TPCA8005-H (Professional+BDSP Model) in SPICE PARK

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