This document provides a device modeling report for a Toshiba TPC8107 power MOSFET. It includes: 1. Details of the MOSFET components and manufacturer. 2. Equivalent circuit diagrams and descriptions of the MOSFET model parameters. 3. Simulation results graphs comparing measurements and simulations of key MOSFET characteristics like transconductance, drain current, gate charge, switching times and more. 4. Evaluation circuits and simulation settings used to generate the results. 5. Tables comparing measurement and simulation data with percent error calculations. The report demonstrates accurate modeling of the MOSFET's electrical behavior through PSpice simulation versus real-world measurements

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: TPC8107
MANUFACTURER: TOSHIBA
Body Diode (Professional) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. Circuit Configuration
Equivalent Circuit
D
S1
- -
+ +
S
S2 R2 DGD
+
-
S
+
10MEG
-
CGD R1
10M
G
Q1
S
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. Transconductance Characteristic
Circuit Simulation Result
40.00
Measurement
Simulation
30.00
GFS (s)
20.00
10.00
0.00
0.00 2.00 4.00 6.00 8.00 10.00
DRAIN CURRENT - ID (A)
Comparison table
gfs
- Id(A) Error(%)
Measurement Simulation
0.500 8.500 8.505 0.059
1.000 12.000 12.149 1.242
2.000 17.000 17.157 0.924
5.000 27.000 26.901 -0.367
10.000 38.000 37.524 -1.253
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Vgs-Id Characteristic
Circuit Simulation result
-50A
-40A
-30A
-20A
-10A
0A
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
V_V1
Evaluation circuit
U4 V3
0Vdc
V2
V1 TPC8107 -10Vdc
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. Comparison Graph
Circuit Simulation Result
50
Measurement
Simulation
40
Drain Current - Id (mA)
30
20
10
0
0 1 2 3 4 5
Gate-Source Voltage - Vgs (V)
Simulation Result
- VGS(V)
- ID(A) Error (%)
Measurement Simulation
1.000 1.750 1.754 0.251
2.000 1.840 1.825 -0.837
5.000 1.950 1.964 0.708
10.000 2.100 2.123 1.095
20.000 2.300 2.350 2.187
50.000 2.750 2.812 2.251
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Rds(on) Characteristic
Circuit Simulation result
-7.0A
-6.0A
-5.0A
-4.0A
-3.0A
-2.0A
-1.0A
0A
0V -10mV -20mV -30mV -40mV
I(V2)
V_VDS
Evaluation circuit
U7 V2
0Vdc
VDS
0Vdc
VGS TPC8107
-10Vdc
0
Simulation Result
ID=-6.5A, VGS=-10V Measurement Simulation Error (%)
R DS (on) (m) 5.500 5.366 -2.436
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Gate Charge Characteristic
Circuit Simulation result
30V
20V
10V
0V
0 40n 80n 120n 160n 200n
-V(W1:4)
Time*1mA
Evaluation circuit
U13
ION = 0uA
IOFF = 1mA
W D2 I2
- Dbreak
+ 13
TR = 10n W1 TPC8107
TD = 0
TF = 10n
PW = 600u -24
PER = 1000u
I1 = 0 V1
I2 = 1m
0
Simulation Result
VDD=-24V,ID=-13A
Measurement Simulation Error (%)
,VGS=-10V
Qgs(nC) 12.000 11.552 -3.733
Qgd(nC) 29.000 29.138 0.476
Qg(nC) 130.000 130.345 0.265
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
- VDS(V) Error(%)
Measurement Simulation
0.100 500.000 500.000 0.000
0.200 460.000 465.000 1.087
0.500 380.000 382.000 0.526
1.000 310.000 295.000 -4.839
2.000 232.000 230.000 -0.862
5.000 150.000 145.000 -3.333
10.000 110.000 115.000 4.545
20.000 80.000 82.000 2.500
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Switching Time Characteristic
Circuit Simulation result
-12V
-10V
-8V
-6V
-4V
-2V
0V
2V
0.92us 0.96us 1.00us 1.04us 1.08us 1.12us
V(3)/1.5 V(L3:1)
Time
Evaluation circuit
U2
3
R1 L3
2
30nH
4.7 RL
V1 = 0 TPC8107
V2 = -20 R2 2.3
TD = 1u V1
TR = 10n 4.7
TF = 10n
PW = 10u VD
PER = 10m -15Vdc
0
Simulation Result
ID=-6.5 A, VDD=-15V
Measurement Simulation Error(%)
VGS=0/-10V
Ton(ns) 22.000 22.515 2.341
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. Output Characteristic
Circuit Simulation result
-50A
-4
-3 -2.8
-10
-40A -6
-8
-2.6
-30A
-2.4
-20A
-2.2
-10A
VGS=-2 V
0A
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
V_V2
Evaluation circuit
U13 V3
0Vdc
V1 TPC8107
V2
0
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc U6
TPC8107
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. Comparison Graph
Circuit Simulation Result
100
Measurement
Simulation
Drain Reverse Current IDR (mA)
10
1
0.00 0.50 1.00 1.50 2.00
Source-Drain Voltage VDS (V)
Simulation Result
VSD(V)
IDR(A) Measuremen Simulation %Error
0.100 0.560 0.555 -0.893
0.200 0.585 0.583 -0.342
0.500 0.610 0.620 1.639
1.000 0.650 0.648 -0.308
2.000 0.680 0.679 -0.147
5.000 0.720 0.724 0.556
10.000 0.780 0.768 -1.538
20.000 0.820 0.827 0.854
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Reverse Recovery Characteristic
Circuit Simulation Result
300mA
200mA
0A
-200mA
-300mA
0.8us 1.0us 1.2us 1.4us 1.6us 1.8us
I(RL21)
Time
Evaluation Circuit
RL21
N07543
50
V1 = -9.40
U12
V2 = 10.60
TD = 0.09u
TF = 10n V21
TR = 10n
PW = 1u
PER = 2u
D8107
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
Trj(ns) 24.000 23.564 -1.817
Trb(ns) 178.000 175.928 -1.164
Trr(ns) 202.000 199.492 -1.242
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

15. Reverse Recovery Characteristic Reference
Trj=24(ns)
Trb=178(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

16. Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
openopenopenopen open
U1 TPC8107
V1 Ropen
100MEG
0Vdc
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

17. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007