This document summarizes the modeling and simulation of a TPC8029 power MOSFET. It includes: 1) Details of the MOSFET model parameters and equations used in the Pspice simulation. 2) Simulation results and comparisons to measurement data for key MOSFET characteristics like transconductance, Vgs-Id, output characteristics, and switching times. 3) The model for the internal body diode and simulation results for forward and reverse recovery characteristics compared to measurements. 4) A diagram showing the relationship between reverse recovery times trj and trb.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameter)
PART NUMBER: TPC8029
MANUFACTURER: TOSHIBA
Body Diode (Model Parameter)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. Circuit Configuration
MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. Transconductance Characteristic
Circuit Simulation Result
30
Measurement
Simulation
25
20
gfs
15
10
5
0
0 1 2 3 4 5
ID : Drain Current A
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
0.200 5.445 5.714 4.940
0.500 8.330 8.091 -2.869
1.000 12.680 12.821 1.112
2.000 18.736 18.018 -3.832
5.000 29.500 28.249 -4.241
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. Vgs-Id Characteristic
Circuit Simulation result
50A
40A
30A
20A
10A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1
TPC8029
Vv ariable
10Vdc
10Vdc
V2
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Comparison Graph
Circuit Simulation Result
50
Measurement
Simulation
40
ID : Drain Current A
30
20
10
0
0 1 2 3 4 5 6
VGS : Gate to Source Voltage V
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.5 2.700 2.800 3.704
1 2.850 2.848 -0.070
2 2.950 2.917 -1.119
5 3.120 3.048 -2.308
10 3.250 3.197 -1.631
20 3.400 3.414 0.412
30 3.500 3.579 2.257
50 3.700 3.853 4.135
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. Rds(on) Characteristic
Circuit Simulation result
10A
9A
8A
7A
6A
5A
4A
3A
2A
1A
0A
0V 10mV 20mV 30mV
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
U1
TPC8029 VDS
0Vdc
10Vdc
VGS
0
Simulation Result
ID=9A, VGS=10V Measurement Simulation Error (%)
R DS (on) (m) 2.900 2.900 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Gate Charge Characteristic
Circuit Simulation result
20V
16V
12V
8V
4V
0V
0 10n 20n 30n 40n 50n 60n 70n
V(W1:3)
Time*1mS
Evaluation circuit
V2
0Vdc
U1
TPC8029
PER = 100u Dbreak
PW = 60u W1
TF = 10n + D1
TR = 10n I2
-
TD = 0 18Adc
I2 = 1m W
I1 = 0 I1 IOFF = 0.1mA
ION = 0uA
V1
24Vdc
0
Simulation Result
VDD=24V,ID=18A
Measurement Simulation Error (%)
,VGS=10V
Qgs(nc) 8.500 8.494 -0.071
Qgd(nc) 16.000 16.024 0.150
Qg(nc) 49.000 40.756 -16.824
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 910.000 910.000 0.000
0.2 855.000 858.000 0.351
0.5 747.000 750.000 0.402
1 635.000 637.000 0.315
2 520.000 518.000 -0.385
5 363.000 363.000 0.000
10 270.000 270.000 0.000
20 195.000 198.500 1.795
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. Switching Time Characteristic
Circuit Simulation result
12V
10V
8V
6V
4V
2V
0V
1.88us 1.96us 2.04us 2.12us 2.20us 2.28us
V(2) V(3)/1.5
Time
Evaluation circuit
3 L2
50n
U1 RL
TPC8029
1.67
R3 L1 2
VDD
15Vdc
V1 = 0 30nH
V2 = 20 V2 4.7
TD = 2u R2
TR = 6n
TF = 7n 4.7
PW = 2u
PER = 10u
0
Simulation Result
ID=9A, VDD=15V
Measurement Simulation Error(%)
VGS=10V
Ton(ns) 29.000 29.064 0.221
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Output Characteristic
Circuit Simulation result
20A
3.8
8, 10 3.6V
4
16A 4.5
6
12A
3.4V
8A
3.3V
4A 3.2V
3.1V
VGS=3.0 V
0A
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U1
TPC8029
Vv ariable
10Vdc
0Vdc
Vstep
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
1.0KA
100A
10A
1.0A
100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
TPC8029
V1 U1
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. Comparison Graph
Circuit Simulation Result
1000
Measurement
Simulation
100
Drain reverse current IDR(A)
10
1
0.1
0 0.2 0.4 0.6 0.8 1
Drain Source voltage VDS(V)
Simulation Result
VDS(V) VDS(V)
IDR(A) %Error
Measurement Simulation
0.100 0.600 0.602 0.333
0.200 0.618 0.620 0.324
0.500 0.642 0.643 0.156
1.000 0.663 0.661 -0.271
2.000 0.683 0.681 -0.293
5.000 0.713 0.711 -0.351
10.000 0.740 0.739 -0.135
20.000 0.788 0.779 -1.142
50.000 0.875 0.872 -0.389
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
19.92us 20.00us 20.08us 20.16us 20.24us 20.32us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.5V V1
V2 = 10.6V
TD = 10n
TR = 10ns TPC8029
TF = 19ns U1
PW = 20us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
Trj(ns) 22.400 22.248 -0.679
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Reverse Recovery Characteristic Reference
Trj=22.4(ns)
Trb=86.4(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007