SPICE MODEL of TPC8111 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameter)
PART NUMBER: TPC8111
MANUFACTURER: TOSHIBA
Body Diode (Model Parameter) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. Circuit Configuration
MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. Transconductance Characteristic
Circuit Simulation Result
1000
Measurement
Simulation
100
gfs
10
1
0 1 2 3 4 5 6 7 8 9 10
- ID : Drain Current A
Comparison table
Gfs
-Id(A) Error(%)
Measurement Simulation
0.100 3.370 3.333 -1.098
0.200 5.108 5.000 -2.114
0.500 7.400 7.543 1.932
1.000 11.230 11.410 1.603
2.000 18.000 18.182 1.011
5.000 25.300 25.000 -1.186
10.000 26.800 27.027 0.847
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. Vgs-Id Characteristic
Circuit Simulation result
-40A
-30A
-20A
-10A
0A
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1
TPC8111
V2
-10
V1
-5
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Comparison Graph
Circuit Simulation Result
40
Measurement
Simulation
30
- ID : Drain Current A
20
10
0
0 1 2 3 4 5
- VGS : Gate to Source Voltage V
Simulation Result
-VGS(V)
-ID(A) Error (%)
Measurement Simulation
0.100 1.835 1.890 2.997
0.200 1.860 1.907 2.527
0.500 1.900 1.954 2.842
1.000 1.950 2.000 2.564
2.000 2.020 2.069 2.426
5.000 2.170 2.207 1.705
10.000 2.320 2.365 1.940
20.000 2.535 2.590 2.170
40.000 2.850 2.915 2.281
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. Rds(on) Characteristic
Circuit Simulation result
-10A
-8A
-6A
-4A
-2A
0A
0V -50mV -100mV
I(VD_Sense)
V_VDS
Evaluation circuit
VD_Sense
0Vdc
U1
TPC8111
VDS
10Vdc
VGS
-10Vdc
0
Simulation Result
ID=-5.5A, VGS=-10V Measurement Simulation Error (%)
R DS (on) (m) 8.100 8.077 -0.284
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Gate Charge Characteristic
Circuit Simulation result
-12V
-10V
-8V
-6V
-4V
-2V
0V
0 20n 40n 60n 80n 100n 120n 140n
V(W1:4)
Time*1mA
Evaluation circuit
U1
ION = 0uA TPC8111
IOFF = 1mA
W I2
-
+
D2 11
W1 Dbreak
I1 = 0 I1
I2 = 1m
TD = 0 V1
TR = 10n
TF = 10n
PW = 600u -24
PER = 1000u
0
Simulation Result
VDD=-24V,ID=-11A
Measurement Simulation Error (%)
,VGS=-10V
Qgs(nc) 12.000 12.033 0.275
Qgd(nc) 20.000 20.000 0.000
Qg(nc) 107.000 69.585 -34.967
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.100 168.000 167.600 -0.238
0.200 159.000 158.780 -0.138
0.500 140.000 140.800 0.571
1.000 124.000 123.620 -0.306
2.000 105.000 105.510 0.486
5.000 83.000 83.200 0.241
10.000 69.000 68.700 -0.435
20.000 57.000 56.500 -0.877
30.000 50.000 50.200 0.400
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. Switching Time Characteristic
Circuit Simulation result
-20V
-18V
-16V
-14V
-12V
-10V
-8V
-6V
-4V
-2V
0V
1.7us 1.8us 1.9us 2.0us 2.1us 2.2us 2.3us 2.4us
V(L1:2) V(R2:2)/1.5
Time
Evaluation circuit
L2 R2
5nH 2.7
U1
TPC8111
R1 L1
V1
PER = 10u
PW = 2u 4.7 30nH
TF = 1n -15Vdc
TR = 1n R3
TD = 2u
V2 = 20 V2 4.7
V1 = 0
0
Simulation Result
ID=-5.5A, VDD=-15V
Measurement Simulation Error(%)
VGS=-10V
Ton(ns) 23.000 22.993 -0.030
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Output Characteristic
Circuit Simulation result
-20A
-2.5V
-16A
-12A -2.4V
-8A -2.3V
-2.2V
-4A
VGS=-2.1V
0A
0V -4V -8V -12V -16V -20V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1
TPC8111
V2
-10
V1
-2
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V
I(VD_Sense)
V_VDS
Evaluation Circuit
VD_Sense
0Vdc
U1
TPC8111
VDS
10Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. Comparison Graph
Circuit Simulation Result
100.00
Measurement
Simulation
Drain reverse current IDR(A)
10.00
1.00
0.10
0 0.2 0.4 0.6 0.8 1
Drain : Source voltage VDS(V)
Simulation Result
VDS(V) VDS(V)
IDR(A) %Error
Measurement Simulation
0.100 0.590 0.589 -0.169
0.200 0.610 0.612 0.328
0.500 0.645 0.643 -0.310
1.000 0.670 0.668 -0.299
2.000 0.695 0.696 0.144
5.000 0.742 0.743 0.135
10.000 0.793 0.792 -0.126
20.000 0.858 0.859 0.117
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
2.6us 2.7us 2.8us 2.9us 3.0us 3.1us 3.2us 3.3us 3.4us 3.5us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.5v V1
V2 = 10.6v U1
TD = 1.97u TPC8111
TR = 15ns
TF = 15ns
PW = 1us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
Trr(ns) 116.000 115.981 -0.016
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Reverse Recovery Characteristic Reference
Trj=22(ns)
Trb=94(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 10V 20V 30V 40V 50V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc
U1
TPC8111
R2
100MEG
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007