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Device Modeling Report



COMPONENTS: MOSFET (Professional)
PART NUMBER: TPCP8302
MANUFACTURER: TOSHIBA
REMARK: P Channel Model
Body Diode (Professional) / ESD Protection Diode




                  Bee Technologies Inc.




    All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
MOSFET MODEL

Pspice model
                                      Model description
 parameter
  LEVEL
      L        Channel Length
     W         Channel Width
     KP        Transconductance
     RS        Source Ohmic Resistance
     RD        Ohmic Drain Resistance
    VTO        Zero-bias Threshold Voltage
    RDS        Drain-Source Shunt Resistance
    TOX        Gate Oxide Thickness
   CGSO        Zero-bias Gate-Source Capacitance
   CGDO        Zero-bias Gate-Drain Capacitance
    CBD        Zero-bias Bulk-Drain Junction Capacitance
     MJ        Bulk Junction Grading Coefficient
     PB        Bulk Junction Potential
     FC        Bulk Junction Forward-bias Capacitance Coefficient
     RG        Gate Ohmic Resistance
     IS        Bulk Junction Saturation Current
      N        Bulk Junction Emission Coefficient
     RB        Bulk Series Resistance
    PHI        Surface Inversion Potential
  GAMMA        Body-effect Parameter
   DELTA       Width effect on Threshold Voltage
    ETA        Static Feedback on Threshold Voltage
  THETA        Modility Modulation
  KAPPA        Saturation Field Factor
   VMAX        Maximum Drift Velocity of Carriers
     XJ        Metallurgical Junction Depth
     UO        Surface Mobility




          All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Transconductance Characteristic

Circuit Simulation Result


           15




           10
     gfs




           5




                                                                   Measurement
                                                                   Simulation
           0
                0              0.5                1              1.5               2
                                      - ID - Drain Current - A


Comparison table



                                                gfs
           -Id(A)                                                               Error(%)
                              Measurement              Simulation
                      0.2                 3.333                   3.448                3.450
                      0.5                  6.25                   6.352                1.632
                        1                 8.333                   8.547                2.568
                        2                11.111                  11.628                4.653




                    All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Vgs-Id Characteristic

Circuit Simulation result

   -12A




   -10A




    -8A




    -6A




    -4A




    -2A




     0A
          0V                -0.4V       -0.8V          -1.2V         -1.6V   -2.0V   -2.4V
               I(V3)
                                                        V_V1

Evaluation circuit


                                                V3


                                                     0Vdc




                      U1
                TPCP8302
                                                                V2


                                                               -10


                       V1


                      -10




                                    0




                       All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Comparison Graph

Circuit Simulation Result

                                    12
                                                  Measurement
                                                  Simulaion

                                    10



                                    8
         - ID - Drain Current - A




                                    6



                                    4



                                    2



                                    0
                                         0        0.4         0.8       1.2      1.6         2          2.4
                                                        - VGS - Gate to Source Voltage - V

Simulation Result


                                                                    -VGS(V)
      -ID(A)                                                                                        Error (%)
                                               Measurement                    Simulation

                                    0.1                        0.900                     0.863                -4.111
                                    0.5                        1.005                     0.955                -4.975
                                        1                      1.076                     1.023                -4.926
                                        2                      1.180                     1.123                -4.831
                                        5                      1.360                     1.336                -1.765
                                    10                         1.600                     1.590                -0.625
                                    12                         1.690                     1.677                -0.769



                                         All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Rds(on) Characteristic

Circuit Simulation result

   -4.0A




   -3.0A




   -2.0A




   -1.0A




      0A
           0V               -20mV       -40mV             -60mV      -80mV     -100mV
                I(V2)
                                                V_V3

Evaluation circuit

                                           V2


                                                0Vdc




                       U1
                 TPCP8302
                                                          V3
                                                   0Vdc



                      V1

                     -10




                                0




Simulation Result

       ID=-2.5, VGS=-4V               Measurement                 Simulation         Error (%)
                R DS (on)                  25.000 m               25.020 m             0.080



                      All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Gate Charge Characteristic
Circuit Simulation result

          -10V




           -8V




           -6V




           -4V




           -2V




            0V
                 0                                    10n                20n              30n
                     V(W1:4)
                                                            Time*1mA

Evaluation circuit



                                                     U1
                                                TPCP8302



                                       W
                                            -
                                           +                                      I2
                                                                         D1
                                       W1                               Dbreak   -5
                                      IOFF = 1mA
                     I1   TD = 0      ION = 0
                          TF = 1n     ROFF = 1e6
                          PW = 600u   RON = 1.0                                   V1
                          PER = 1500u
                          I1 = 0
                          I2 = 1m                                                -16
                          TR = 1n




                                                            0




Simulation Result

      VDD=-16V,ID=-5A
                                       Measurement                 Simulation          Error (%)
         ,VGS=-5V
           Qgs                                      3.600 nC            3.605 nC            0.139
           Qgd                                      5.100 nC            5.105 nC            0.098
            Qg                                     20.000 nC           20.000 nC            0.000



                 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Capacitance Characteristic




                                                            Measurement
                                                            Simulation




Simulation Result


                                      Cbd(pF)
           VDS(V)                                                   Error(%)
                          Measurement          Simulation
                    0.1         310.000               309.000            -0.323
                    0.2         268.000               268.500             0.187
                    0.5         190.000               190.000             0.000
                      1         125.000               126.000             0.800
                      2          72.000                74.000             2.778
                      5          31.000                31.000             0.000
                     10          15.000                15.500             3.333
                     20           9.000                 8.600            -4.444




              All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Switching Time Characteristic

Circuit Simulation result

     -7.0V


     -6.0V


     -5.0V


     -4.0V


     -3.0V


     -2.0V


     -1.0V


         0V
         1.96us                 2.00us             2.04us        2.08us              2.12us
              V(L2:2)            V(L1:1)/2
                                                          Time


Evaluation circuit

                                                                  L1      R3


                                                                  30nH
                                                                          4




                                              U1
                                        TPCP8302



                                R1           L2                                -10   V1


                                           30nH
                                4.7
               V1 = 0      V2
               V2 = -10               R2
               TD = 2u
               TR = 10n                4.7
               TF = 10n
               PW = 10u
               PER = 50u



                                                      0




Simulation Result

       ID=-2.5A, VDD=-10V
                                           Measurement           Simulation               Error(%)
             VGS=-5V
               ton                                20.000 ns      20.089        ns             0.445



                All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Output Characteristic

Circuit Simulation result

   -20A

                                         -2.5
                                                         -2.2V
                            -10
                                                                                -2.0V
   -16A
                                                              -3
                                            -6           -4
   -12A
                                                                                -1.8V



    -8A
                                                                                -1.6V



    -4A
                                                                                -1.4V


                                                                           VGS= -1.2V
     0A
          0V                  -0.4V      -0.8V                   -1.2V      -1.6V       -2.0V
               I(V3)
                                                       V_V2


Evaluation circuit


                                                 V3


                                                      0Vdc




                       U1
                 TPCP8302
                                                                      V2


                                                                     -2V


                  V1


                  0




                                  0




                       All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Forward Current Characteristic

Circuit Simulation Result

          -100A
     3




         -100mA
                  0V         0.2V    0.4V        0.6V     0.8V      1.0V     1.2V
                       -I(R1)
                                                 V_V1


Evaluation Circuit


                                     R1

                                     0.01m




                              V1
                       0Vdc                     U1
                                     DTPCP8302_PRO




                                          0




                   All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Comparison Graph

Circuit Simulation Result
                                         100
                                                     Measurement
                                                     Simulation
        - Drain reverse current IDR(A)




                                         10




                                          1




                                         0.1
                                               0    0.2       0.4       0.6      0.8       1        1.2

                                                          - Drain Source voltage VDS(V)
Simulation Result


                                                        -VDS(V)                -VDS(V)
           -IDR(A)                                                                                   %Error
                                                      Measurement             Simulation
                                            0.100             0.510                   0.507               -0.588
                                            0.200             0.540                   0.538               -0.370
                                            0.500             0.583                   0.586                0.515
                                            1.000             0.630                   0.633                0.476
                                            2.000             0.695                   0.694               -0.144
                                            5.000             0.803                   0.798               -0.623
                                           10.000             0.910                   0.912                0.220
                                           20.000             1.090                   1.081               -0.826




                                           All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Reverse Recovery Characteristic

Circuit Simulation Result

      400mA




      200mA




         0A




     -200mA




     -400mA
        19.92us               20.00us    20.08us               20.16us   20.24us   20.32us
             I(RL)
                                                        Time

Evaluation Circuit

                                           RL


                                          50




                 V1 = -9.58    V1
                 V2 = 10.5                         U1
                 TD = 20n               DTPCP8302_PRO
                 TR = 10n
                 TF = 10n
                 PW = 20u
                 PER = 100u




                                                0


Compare Measurement vs. Simulation

                              Measurement                      Simulation           Error (%)
           trj                       24.800 ns                     24.889 ns              0.359
          trb                        60.800 ns                     60.702 ns             -0.161
          trr                        85.600 ns                     85.591 ns             -0.011



                  All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Reverse Recovery Characteristic                                        Reference




Trj= 24.8(ns)
Trb= 60.8(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50




                                                     Example




                               Relation between trj and trb




              All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Zener Voltage Characteristic
Circuit Simulation Result

         10mA




          5mA




           0A
                0V      5V        10V     15V   20V   25V    30V   35V   40V   45V 50V
                     I(R1)
                                                      V_V1


Evaluation Circuit




                                         U1
                                   TPCP8302
                                                                         R2
                                                                         1G
                                  R1


                             V1   0.01m
                      0Vdc




                                                 0




                 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
Zener Voltage Characteristic                                         Reference




            All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

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SPICE MODEL of TPCP8302 (Professional+BDP Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: MOSFET (Professional) PART NUMBER: TPCP8302 MANUFACTURER: TOSHIBA REMARK: P Channel Model Body Diode (Professional) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 2. MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 3. Transconductance Characteristic Circuit Simulation Result 15 10 gfs 5 Measurement Simulation 0 0 0.5 1 1.5 2 - ID - Drain Current - A Comparison table gfs -Id(A) Error(%) Measurement Simulation 0.2 3.333 3.448 3.450 0.5 6.25 6.352 1.632 1 8.333 8.547 2.568 2 11.111 11.628 4.653 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 4. Vgs-Id Characteristic Circuit Simulation result -12A -10A -8A -6A -4A -2A 0A 0V -0.4V -0.8V -1.2V -1.6V -2.0V -2.4V I(V3) V_V1 Evaluation circuit V3 0Vdc U1 TPCP8302 V2 -10 V1 -10 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 5. Comparison Graph Circuit Simulation Result 12 Measurement Simulaion 10 8 - ID - Drain Current - A 6 4 2 0 0 0.4 0.8 1.2 1.6 2 2.4 - VGS - Gate to Source Voltage - V Simulation Result -VGS(V) -ID(A) Error (%) Measurement Simulation 0.1 0.900 0.863 -4.111 0.5 1.005 0.955 -4.975 1 1.076 1.023 -4.926 2 1.180 1.123 -4.831 5 1.360 1.336 -1.765 10 1.600 1.590 -0.625 12 1.690 1.677 -0.769 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 6. Rds(on) Characteristic Circuit Simulation result -4.0A -3.0A -2.0A -1.0A 0A 0V -20mV -40mV -60mV -80mV -100mV I(V2) V_V3 Evaluation circuit V2 0Vdc U1 TPCP8302 V3 0Vdc V1 -10 0 Simulation Result ID=-2.5, VGS=-4V Measurement Simulation Error (%) R DS (on) 25.000 m 25.020 m 0.080 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 7. Gate Charge Characteristic Circuit Simulation result -10V -8V -6V -4V -2V 0V 0 10n 20n 30n V(W1:4) Time*1mA Evaluation circuit U1 TPCP8302 W - + I2 D1 W1 Dbreak -5 IOFF = 1mA I1 TD = 0 ION = 0 TF = 1n ROFF = 1e6 PW = 600u RON = 1.0 V1 PER = 1500u I1 = 0 I2 = 1m -16 TR = 1n 0 Simulation Result VDD=-16V,ID=-5A Measurement Simulation Error (%) ,VGS=-5V Qgs 3.600 nC 3.605 nC 0.139 Qgd 5.100 nC 5.105 nC 0.098 Qg 20.000 nC 20.000 nC 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.1 310.000 309.000 -0.323 0.2 268.000 268.500 0.187 0.5 190.000 190.000 0.000 1 125.000 126.000 0.800 2 72.000 74.000 2.778 5 31.000 31.000 0.000 10 15.000 15.500 3.333 20 9.000 8.600 -4.444 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 9. Switching Time Characteristic Circuit Simulation result -7.0V -6.0V -5.0V -4.0V -3.0V -2.0V -1.0V 0V 1.96us 2.00us 2.04us 2.08us 2.12us V(L2:2) V(L1:1)/2 Time Evaluation circuit L1 R3 30nH 4 U1 TPCP8302 R1 L2 -10 V1 30nH 4.7 V1 = 0 V2 V2 = -10 R2 TD = 2u TR = 10n 4.7 TF = 10n PW = 10u PER = 50u 0 Simulation Result ID=-2.5A, VDD=-10V Measurement Simulation Error(%) VGS=-5V ton 20.000 ns 20.089 ns 0.445 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 10. Output Characteristic Circuit Simulation result -20A -2.5 -2.2V -10 -2.0V -16A -3 -6 -4 -12A -1.8V -8A -1.6V -4A -1.4V VGS= -1.2V 0A 0V -0.4V -0.8V -1.2V -1.6V -2.0V I(V3) V_V2 Evaluation circuit V3 0Vdc U1 TPCP8302 V2 -2V V1 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 11. Forward Current Characteristic Circuit Simulation Result -100A 3 -100mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V -I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc U1 DTPCP8302_PRO 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 12. Comparison Graph Circuit Simulation Result 100 Measurement Simulation - Drain reverse current IDR(A) 10 1 0.1 0 0.2 0.4 0.6 0.8 1 1.2 - Drain Source voltage VDS(V) Simulation Result -VDS(V) -VDS(V) -IDR(A) %Error Measurement Simulation 0.100 0.510 0.507 -0.588 0.200 0.540 0.538 -0.370 0.500 0.583 0.586 0.515 1.000 0.630 0.633 0.476 2.000 0.695 0.694 -0.144 5.000 0.803 0.798 -0.623 10.000 0.910 0.912 0.220 20.000 1.090 1.081 -0.826 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 13. Reverse Recovery Characteristic Circuit Simulation Result 400mA 200mA 0A -200mA -400mA 19.92us 20.00us 20.08us 20.16us 20.24us 20.32us I(RL) Time Evaluation Circuit RL 50 V1 = -9.58 V1 V2 = 10.5 U1 TD = 20n DTPCP8302_PRO TR = 10n TF = 10n PW = 20u PER = 100u 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trj 24.800 ns 24.889 ns 0.359 trb 60.800 ns 60.702 ns -0.161 trr 85.600 ns 85.591 ns -0.011 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 14. Reverse Recovery Characteristic Reference Trj= 24.8(ns) Trb= 60.8(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 15. Zener Voltage Characteristic Circuit Simulation Result 10mA 5mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit U1 TPCP8302 R2 1G R1 V1 0.01m 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2008