SPICE MODEL of TPC8110 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: TPC8110
MANUFACTURER: TOSHIBA
Body Diode (Professional) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Transconductance Characteristic
Circuit Simulation Result
50
45
40
35
30
gfs
25
20
15
10
5 Measurement
Simulation
0
0 5 10 15 20
- ID(A)
Comparison table
gfs
- Id(A) Error(%)
Measurement Simulation
0.1 2.000 2.000 0.000
0.2 3.300 3.333 1.000
0.5 6.200 6.250 0.806
1 7.700 7.692 -0.104
2 11.00 11.111 1.009
5 15.500 15.625 0.806
10 22.000 22.222 1.009
20 31.500 31.746 0.781
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Vgs-Id Characteristic
Circuit Simulation result
-40A
-30A
-20A
-10A
0A
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
V_V1
Evaluation circuit
U9 V3
0Vdc
V1 TPC8110 V2
0 10
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Comparison Graph
Circuit Simulation Result
20
Measurement
Simulation
16
- ID - Drain Current - A
12
8
4
0
0 1 2 3 4 5 6
- VGS - Gate to Source Voltage - V
Simulation Result
- VGS(V)
- ID(A) Error (%)
Measurement Simulation
0.1 1.700 1.696 -0.235
0.2 1.720 1.727 0.407
0.5 1.800 1.807 0.389
1 1.900 1.892 -0.421
2 2.000 2.009 0.450
5 2.250 2.244 -0.267
10 2.500 2.512 0.480
20 2.900 2.895 -0.172
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. Rds(on) Characteristic
Circuit Simulation result
-6.0A
-5.0A
-4.0A
-3.0A
-2.0A
-1.0A
0A
0V -50mV -100mV -150mV -200mV
I(V2)
V_VDS
Evaluation circuit
U9 V2
0Vdc
0Vdc
VGS TPC8110 VDS
-10Vdc
0
Simulation Result
ID=-4A, VGS=-10V Measurement Simulation Error (%)
R DS (on) 17.000 m 17.107 m 0.629
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Gate Charge Characteristic
Circuit Simulation result
40V
30V
20V
10V
0V
0 20n 40n 60n 80n
-V(W1:4)
Time*1mA
Evaluation circuit
U9
ION = 0uA
IOFF = 1mA
W D2 I2
-
I1 = 0 + 8
I1 Dbreak
I2 = 1m W1 TPC8110
TD = 0
TR = 10n V1
TF = 10n
PW = 600u
PER = 1000u -32
0
Simulation Result
VDD=-32V,ID=-8A
Measurement Simulation Error (%)
,VGS=-10V
Qgs(nC) 5.500 5.546 0.836
Qgd(nC) 12.000 12.000 0.000
Qg 48.000 48.207 0.431
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
- VDS(V) Error(%)
Measurement Simulation
0.1 250.000 250.000 0.000
0.2 227.000 230.000 1.322
0.5 188.000 190.000 1.064
1 163.000 160.000 -1.840
2 118.000 120.000 1.695
5 77.000 80.000 3.896
10 60.000 60.000 0.000
20 45.000 45.000 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. Switching Time Characteristic
Circuit Simulation result
-14V
-12V
-10V
-8V
-6V
-4V
-2V
0V
1.98us 2.00us 2.05us 2.10us 2.13us
V(L1:2) V(L2:1)/2
Time
Evaluation circuit
U9 L2 R2
5
50nH
-20Vdc
RG L1
PER = 2000u V1
PW = 10u
TF = 1n 30nH
TR = 1n 4.7 TPC8110
R1
TD = 2u
V2 = 20 V2 4.7
V1 = 0
0
Simulation Result
ID=-4 A, VDD=-20V
Measurement Simulation Error(%)
VGS=0/-10V
Ton(ns) 15.000 14.846 -1.027
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Output Characteristic
Circuit Simulation result
-40A
-10 -4
6
-5 2.3
-30A
-6 - 3.25
-3.0
-20A
-2.75
-10A
-2.5
VGS=-2.25 V
0A
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
V_V2
Evaluation circuit
U9 V3
0Vdc
V1
TPC8110 V2
0 0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 0.4V 0.8V 1.2V 1.6V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc U24
TPC8110
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
100
Measurement
Simulation
Drain reverse current IDR(A)
10
1
0.1
0 0.2 0.4 0.6 0.8 1 1.2
Source-Drain voltage VSD(V)
Simulation Result
VSD(V)
IDR(A) Measuremen Simulation %Error
0.1 0.620 0.616 -0.65
0.2 0.635 0.636 0.16
0.5 0.660 0.665 0.76
1 0.690 0.693 0.43
2 0.720 0.727 0.97
5 0.780 0.782 0.26
10 0.830 0.832 0.24
20 0.900 0.900 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us 1.4us 1.5us 1.6us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.4v V1
V2 = 10.6v
TD = 30n U24
TR = 10ns
TF = 23ns D8110
PW = 1us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
Trj(ns) 19.000 19.056 0.295
Trb(ns) 96.000 96.008 0.008
Trr(ns) 115.000 115.064 0.056
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Reverse Recovery Characteristic Reference
Trj=19(ns)
Trb=96(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
U24
R1
TPC8110
R2
0.01m
100MEG
V1
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006