SPICE MODEL of SSM3K102TU (Standard+BDS Model) in SPICE PARK
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SPICE MODEL of SSM3K102TU (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of SSM3K102TU (Standard+BDS Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Model Parameter) PART NUMBER: SSM3K102TU MANUFACTURER: TOSHIBA Body Diode (Model Parameter) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 2. MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 3. Transconductance Characteristic Circuit Simulation Result 10 Measurement 9 Simulation 8 7 6 gfs 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 ID : Drain Curre nt A Comparison table gfs Id(A) Error(%) Measurement Simulation 0.001 0.034 0.035 2.941 0.002 0.070 0.072 2.857 0.005 0.185 0.181 -2.162 0.010 0.370 0.362 -2.162 0.020 0.730 0.723 -0.959 0.050 1.170 1.135 -2.991 0.100 1.620 1.603 -1.049 0.200 2.250 2.252 0.089 0.500 3.530 3.510 -0.567 1.000 4.900 4.895 -0.102 2.000 6.800 6.789 -0.162 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 4. Vgs-Id Characteristic Circuit Simulation result 10A 1.0A 100mA 10mA 1.0mA 0V 1.0V 2.0V I(V3) V_V2 Evaluation circuit V3 0Vdc U1 SSM3K102TU Vv ariable 10Vdc 3Vdc V2 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 5. Comparison Graph Circuit Simulation Result 10.000 Measurement Simulation 1.000 ID : Drain Current A 0.100 0.010 0.001 0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 VGS : Gate to Source Voltage V Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.001 0.640 0.660 3.125 0.002 0.680 0.667 -1.912 0.005 0.700 0.680 -2.857 0.010 0.730 0.695 -4.795 0.020 0.750 0.715 -4.667 0.050 0.790 0.757 -4.177 0.100 0.820 0.805 -1.829 0.200 0.900 0.869 -3.444 0.500 1.010 1.000 -0.990 1.000 1.130 1.149 1.681 2.000 1.350 1.356 0.444 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 6. Rds(on) Characteristic Circuit Simulation result 2.0A 1.8A 1.6A 1.4A 1.2A 1.0A 0.8A 0.6A 0.4A 0.2A 0A 0V 10mV 20mV 30mV 40mV 50mV 60mV 70mV 80mV 90mV I(V3) V_VDS Evaluation circuit V3 0Vdc U1 SSM3K102TU VDS 10Vdc 0Vdc VGS 0 Simulation Result ID=1A, VGS=4V Measurement Simulation Error (%) R DS (on) (m) 63.000 63.077 0.122 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 7. Gate Charge Characteristic Circuit Simulation result 16V 14V 12V 10V 8V 6V 4V 2V 0V 0 1n 2n 3n 4n 5n 6n 7n 8n 9n 10n V(W1:3) Time*1mS Evaluation circuit V2 0Vdc U1 SSM3K102TU PER = 1000u Dbreak PW = 600u W1 TF = 10n + D1 TR = 10n I2 - TD = 0 1.875Adc I2 = 1m W I1 IOFF = 0.1mA I1 = 0 ION = 0uA V1 15Vdc 0 Simulation Result VDD=15V,ID=1.875A Measurement Simulation Error (%) ,VGS=10V Qgs(nc) 0.400 0.401 0.250 Qgd(nc) 1.200 1.205 0.417 Qg(nc) 13.200 4.864 -63.152 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.100 36.300 36.200 -0.275 0.200 33.600 33.650 0.149 0.500 28.600 28.620 0.070 1.000 23.900 24.000 0.418 2.000 19.300 19.400 0.518 5.000 14.100 14.050 -0.355 10.000 10.800 10.830 0.278 20.000 8.400 8.350 -0.595 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 9. Switching Time Characteristic Circuit Simulation result 20.0V 17.5V 15.0V 12.5V 10.0V 7.5V 5.0V 2.5V 0V 1.92us 1.96us 2.00us 2.04us 2.08us 2.12us V(2)*4 V(3) Time Evaluation circuit 3 L2 50n U1 SSM3K102TU RL R1 L1 2 40 V1 = 0 4.7 30nH V2 = 5 V2 VDD TD = 2u R2 10Vdc TR = 6n TF = 7n 4.7 PW = 1u PER = 10u 0 Simulation Result ID=0.25A, VDD=10V Measurement Simulation Error(%) VGS=2.5V Ton(ns) 9.000 9.021 0.233 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 10. Output Characteristic Circuit Simulation result 5.0A 4.0A 1.6V 3.0A 1.5V 1.4V 2.0A 1.3V 1.0A VGS=1.2V 0A 0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V I(Vdsense) V_Vvariable Evaluation circuit Vdsense 0Vdc U1 SSM3K102TU Vv ariable 10Vdc 0Vdc Vstep 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 11. Output Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 12. BODY DIODE SPICE MODEL Forward Current Characteristic Circuit Simulation Result 10A 1.0A 100mA 10mA 1.0mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc SSM3K102TU U1 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 13. Comparison Graph Circuit Simulation Result 10.00 Measurement Simulation 1.00 Drain reverse current IDR(A) 0.10 0.01 0.00 0 0.2 0.4 0.6 0.8 1 1.2 Source: Drain voltage VSD(V) Simulation Result VSD(V) VSD(V) IDR(A) %Error Measurement Simulation 0.001 0.387 0.386 -0.258 0.002 0.406 0.405 -0.246 0.005 0.432 0.433 0.231 0.010 0.454 0.452 -0.441 0.020 0.474 0.475 0.211 0.050 0.504 0.503 -0.198 0.100 0.530 0.528 -0.377 0.200 0.554 0.555 0.181 0.500 0.602 0.601 -0.166 1.000 0.646 0.647 0.155 2.000 0.700 0.701 0.143 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 14. Reverse Recovery Characteristic Circuit Simulation Result 400mA 0A -400mA 20.06us 20.08us 20.10us 20.12us 20.14us 20.16us I(R1) Time Evaluation Circuit R1 50 V1 = -9.5v V1 V2 = 10.5v TD = 100n SSM3K102TU TR = 1ns U1 TF = 1ns PW = 20us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) Trr(ns) 13.200 13.264 0.485 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 15. Reverse Recovery Characteristic Reference Trj=7.4(ns) Trb=5.8(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 16. ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic Circuit Simulation Result 10uA 9uA 8uA 7uA 6uA 5uA 4uA 3uA 2uA 1uA 0A 0V 2V 4V 6V 8V 10V 12V 14V 16V 18V 20V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc U1 SSM3K102TU R2 100MEG 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 17. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2008